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1.发明申请公开(公告)号：US20190092683A1
公开(公告)日：2019-03-28
申请号：US16092346
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
摘要： The invention concerns a method for manufacturing scratch-resistant antireflective glass substrates by ion implantation, comprising ionizing a source gas of N2 so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N, by accelerating with an acceleration voltage comprised between 20 kV and 30 kV and an ion dosage comprised between 5×1016 ions/cm2 and 1017 ions/cm2. The invention further concerns scratch-resistant antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US20190161404A1
公开(公告)日：2019-05-30
申请号：US16092461
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
摘要： A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and −2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US20190119155A1
公开(公告)日：2019-04-25
申请号：US16092638
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER
摘要： The invention concerns a method for manufacturing heat treatable antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, O2, or Ar, ionizing the source gas so as to form a mixture of single charge and multicharge ions of Ar, N, or O, forming a beam of single charge and multicharge ions of Ar, N, or O by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and setting the ion dosage at a value comprised between 7.5×1016 and 7.5×1017 ions/cm2. The invention further concerns heat treatable and heat treated antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US20190161403A1
公开(公告)日：2019-05-30
申请号：US16092373
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
摘要： A method for manufacturing blue reflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 15 kV and 35 kV and a dosage D between −9.33×1015×A/kV+3.87×1017 ions/cm2 and 7.50×1017 ions/cm2. A blue reflective glass substrate including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
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公开(公告)号：US20200325067A1
公开(公告)日：2020-10-15
申请号：US16092395
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER , Denis BUSARDO
IPC分类号： C03C23/00 , B32B17/10 , C03C4/18 , C03C4/02 , C03C3/062 , C03C3/064 , C03C3/097 , C03C3/089 , C03C3/091 , C03C3/083 , C03C3/085 , C03C3/087 , C03C3/078 , B60J1/00
摘要： A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and −5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
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6.发明申请公开(公告)号：US20190119154A1
公开(公告)日：2019-04-25
申请号：US16092533
申请日：2017-03-13
发明人： Benjamine NAVET , Pierre BOULANGER
摘要： The invention concerns a method for manufacturing glass substrates with reduced internal reflectance by ion implantation, comprising ionizing a source gas of N2, O2, Ar, and/or He so as to form a mixture of single charge and multicharge ions of N, O, Ar, and/or He forming a beam of single charge and multicharge ions of N, O, Ar, and/or He, by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and an ion dosage comprised between 1017 ions/cm2 and 1018 ions/cm2. The invention further concerns glass substrates having reduced internal reflectance, comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
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公开(公告)号：US20170334775A1
公开(公告)日：2017-11-23
申请号：US15520908
申请日：2015-10-21
摘要： The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
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公开(公告)号：US20210347688A1
公开(公告)日：2021-11-11
申请号：US17270714
申请日：2019-07-24
发明人： Benjamine NAVET , Jacques AMORY
IPC分类号： C03C21/00
摘要： A method of implanting ions to modify the invading ion surface layer concentration of a chemically strengthened glass substrate, where the ions are selected from the group consisting of N, H, O, He, Ne, Ar, and Kr and are implanted in the chemically strengthened glass substrate with a dosage between 1014 ions/cm2 and 1018 ions/cm2, and an acceleration voltage between 5 kV and 100 kV.
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9.发明申请公开(公告)号：US20180370852A1
公开(公告)日：2018-12-27
申请号：US16061677
申请日：2016-12-01
发明人： Benjamine NAVET , Pierre BOULANGER
摘要： The invention relates to a glass substrate for chemical strengthening where a side is treated by ion implantation so as to reduce the extent of ion exchange upon chemical strengthening. Other embodiments relate to a method for making a chemically strengthened glass substrate with controlled curvature comprising: providing a substrate having first and second opposing sides, wherein the substrate presents in the surface layer of at least part of the first side a first ion implantation profile that reduces the extent of ion exchange upon chemical strengthening and chemically strengthening the ion implantation treated glass substrate. The parameters of the ion implantation are chosen such that a controlled curvature is obtained upon chemical strengthening.
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公开(公告)号：US20210249223A1
公开(公告)日：2021-08-12
申请号：US17251043
申请日：2019-06-13
发明人： Benjamine NAVET , Amory JACQUES , Philippe ROQUINY
IPC分类号： H01J37/317 , G01J5/08 , G01J5/04 , C03C23/00 , C03C3/087
摘要： Substrates that can act as optical elements for transmitting infrared light and that have low reflectance for infrared light and the assembly of such substrates with a source of infrared light and/or with an infrared-sensitive optical component. The substrates are suitable for cover glasses and optical elements, such as lenses, prisms, or mirrors to be used with infrared light. Ions are implanted into a substrate in order to reduce its reflectance of infrared light.
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