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21 条记录 (耗时 0.023 秒)

    Method for minimizing magnetically dead interfacial layer during COC process
    1.
    发明授权
    Method for minimizing magnetically dead interfacial layer during COC process 有权
    在COC过程中磁化死层界面最小化的方法

    公开(公告)号：US08815060B2

    公开(公告)日：2014-08-26

    申请号：US10930377

    申请日：2004-08-30

    申请人： Eric Wayne Flint ,  Ning Shi ,  Qi-Fan Xiao

    发明人： Eric Wayne Flint ,  Ning Shi ,  Qi-Fan Xiao

    IPC分类号： C23C14/00 ,  C23C14/32 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23C14/02

    CPC分类号： G11B5/3163 ,  G11B5/3106

    摘要： A method for applying a protective layer to an electronic device such as the ABS of a slider, magnetic head, etc. for reducing paramagnetic deadlayer thickness includes selecting an etching angle for minimizing formation of a paramagnetic deadlayer at an interface of an electronic device and an adhesive layer subsequently formed on the electronic device, etching a surface of an electronic device at the selected angle, the selected angle being less than about 75 degrees from an imaginary line extending perpendicular to the surface, forming an adhesive layer on the etched surface of the electronic device, and forming a protective layer on the adhesive layer. A magnetic head formed by the process is also disclosed.

    摘要翻译： 将保护层施加到诸如滑块，磁头等的ABS的用于降低顺磁性层的厚度的电子设备的方法包括选择蚀刻角度以最小化在电子设备的界面处形成顺磁性残留层 随后形成在电子设备上的粘合剂层，以选定的角度蚀刻电子器件的表面，所选择的角度距离垂直于该表面延伸的假想线小于约75度，在该蚀刻表面上形成粘合剂层 电子器件，并在粘合剂层上形成保护层。 还公开了通过该方法形成的磁头。

    Polychannel multiple-total-external reflection neutron radiography
    5.
    发明授权
    Polychannel multiple-total-external reflection neutron radiography 失效
    多通道多全反射中子射线成像

    公开(公告)号：US5553105A

    公开(公告)日：1996-09-03

    申请号：US332410

    申请日：1994-10-31

    申请人： Qi-Fan Xiao

    发明人： Qi-Fan Xiao

    IPC分类号： G01N23/05

    CPC分类号： G01N23/05

    摘要： A method of generating a neutron-radiographic image of a sample by passing a generated neutron beam through a multiple-channel, multiple-total-external reflection neutron bender/filter manipulator which includes at least one multiple-channel element, directing an output beam from the neutron bender/filter manipulator onto the sample; passing a neutron beam exiting the sample though a multiple-channel, multiple-total-external reflection neutron scatter-rejection manipulator which includes at least one multiple-channel element, the multiple-channel element being comprised of a material containing a nuclear isotope which is highly absorptive to neutrons with energies less than approximately 10,000 eV; and detecting a beam which exits the scatter-rejection manipulator.

    摘要翻译： 通过使产生的中子束通过多通道多总体外部反射中子弯曲/滤波器操纵器来产生样品的中子射线照相图像的方法，所述多通道多重全反射中子弯曲/滤波器操纵器包括至少一个多通道元件，将输出光束从 中子弯曲/过滤器操纵器到样品上; 使穿过样品的中子束通过包含至少一个多通道元件的多通道多全反射中子散射 - 斥力操纵器，所述多通道元件由含有核同位素的材料组成，所述核同位素是 高度吸收能量小于约10,000 eV的中子; 以及检测离开该分散拒斥操纵器的光束。

    PLASMA POLISH FOR MAGNETIC RECORDING MEDIA
    6.
    发明申请
    PLASMA POLISH FOR MAGNETIC RECORDING MEDIA 有权
    用于磁记录介质的等离子体抛光

    公开(公告)号：US20130309526A1

    公开(公告)日：2013-11-21

    申请号：US13472854

    申请日：2012-05-16

    申请人： Mark F. Mercado ,  Mohammad T. Mirzamaani ,  Kai Tang ,  Qi-Fan Xiao

    发明人： Mark F. Mercado ,  Mohammad T. Mirzamaani ,  Kai Tang ,  Qi-Fan Xiao

    IPC分类号： G11B5/72 ,  G11B5/64 ,  G11B5/82 ,  G11B5/84

    CPC分类号： G11B5/8408 ,  G11B5/72

    摘要： Fabrication methods for magnetic recording media that use a plasma polish are disclosed. For one exemplary method, a film of a magnetic recording medium is deposited, and a top surface of the film is polished utilizing a plasma formed by a noble gas to smoothen the top surface of the film. A subsequent layer is then deposited onto the polished top surface of the film. A top surface of the subsequent layer has a reduced roughness by being deposited on the polished top surface of the film.

    摘要翻译： 公开了使用等离子体抛光剂的磁记录介质的制造方法。 对于一个示例性方法，沉积磁记录介质的膜，并且使用由惰性气体形成的等离子体来抛光膜的顶表面以使膜的顶表面平滑。 然后将随后的层沉积在抛光的薄膜顶表面上。 随后层的顶表面通过沉积在该抛光的顶部表面上而具有减小的粗糙度。

    MAGNETIC THIN FILM MEDIA WITH A BI-LAYER STRUCTURE OF CRTI/NIP
    10.
    发明申请
    MAGNETIC THIN FILM MEDIA WITH A BI-LAYER STRUCTURE OF CRTI/NIP 有权
    具有CRTI / NIP的双层结构的磁薄膜介质

    公开(公告)号：US20050048328A1

    公开(公告)日：2005-03-03

    申请号：US10651634

    申请日：2003-08-29

    申请人： Xiaoping Bian ,  Mary Doerner ,  Mohammad Mirzamaani ,  Adam Polcyn ,  Qi-Fan Xiao

    发明人： Xiaoping Bian ,  Mary Doerner ,  Mohammad Mirzamaani ,  Adam Polcyn ,  Qi-Fan Xiao

    IPC分类号： G11B5/738 ,  G11B5/65 ,  G11B5/73 ,  G11B5/85 ,  G11B5/851 ,  B32B3/02 ,  G11B5/64

    CPC分类号： G11B5/7325 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12986

    摘要： A thin film magnetic media structure with a bi-layer structure of amorphous chromium titanium (CrTi) followed by an amorphous layer of nickel phosphorus (NiP) is disclosed. After the NiP has been deposited it is exposed to oxygen to form an oxidized surface. Preferably the underlayer is deposited directly onto the oxidized NiP surface. The bi-layer structure of CrTi/NiP promotes excellent in-plane crystallographic orientation in the cobalt alloy magnetic layer(s) and allows: an ultra-thin chromium underlayer to be used which provides better control over grain size and distribution. When the CrTi/NiP bi-layer structure is combined with a circumferentially textured substrate, preferably glass, a high Mrt orientation ratio (OR) results.

    摘要翻译： 公开了一种具有非晶态铬钛（CrTi）双层结构，随后是镍磷（NiP）非晶层的薄膜磁介质结构。 NiP沉积后，暴露于氧气以形成氧化表面。 优选地，底层直接沉积在氧化的NiP表面上。 CrTi / NiP的双层结构促进钴合金磁性层中的优异的面内晶体取向，并且允许：使用超薄铬底层，其提供对晶粒尺寸和分布的更好控制。 当CrTi / NiP双层结构与周向织构化的基底（优选玻璃）组合时，得到高的Mrt取向比（OR）。