公开(公告)号：US20060249369A1

公开(公告)日：2006-11-09

申请号：US11398849

申请日：2006-04-05

申请人： Maria Marangon ,  Paola Besana ,  Raimondo Cecchini ,  Mauro Tresoldi

发明人： Maria Marangon ,  Paola Besana ,  Raimondo Cecchini ,  Mauro Tresoldi

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01L27/2445 ,  C23C14/046 ,  C23C14/0623 ,  H01J37/3408 ,  H01J37/3447 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： A method for depositing a chalcogenide layer in a phase change memory, whereby a chalcogenide layer is deposited by physical vapor deposition in a deposition chamber, having a collimator. The collimator is formed by a holed disk arranged in a deposition area delimited by the chamber walls and the chamber cover. The target is biased by a pulsed voltage to avoid charging and arching. The method is used to manufacture a phase change memory cell, whereby a resistive heater element is formed in a dielectric layer, a mold layer is formed over the dielectric layer; an aperture is formed in the mold layer over the resistive heater element; a chalcogenide layer is conformally deposited in the aperture to define a phase change portion; and a select element is formed in electrical contact with the phase change portion.

摘要翻译： 一种用于在相变存储器中沉积硫族化物层的方法，由此通过物理气相沉积在具有准直仪的沉积室中沉积硫族化物层。 准直器由布置在由室壁和室盖限定的沉积区域中的孔形成。 目标被脉冲电压偏置以避免充电和拱起。 该方法用于制造相变存储单元，由此在电介质层中形成电阻加热元件，在电介质层上形成模层; 在电阻加热器元件上的模具层中形成孔; 在孔中共形沉积硫属化物层以限定相变部分; 并且选择元件形成为与相变部分电接触。