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    Techniques for temperature controlled ion implantation
    2.
    发明申请
    Techniques for temperature controlled ion implantation 有权
    温度控制离子注入技术

    公开(公告)号：US20080076194A1

    公开(公告)日：2008-03-27

    申请号：US11525878

    申请日：2006-09-23

    Applicant: Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    Inventor： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    IPC: H01L21/425

    CPC classification number: H01J37/3171 ,  H01J2237/2001

    Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

    Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

    Ion implanter having enhanced low energy ion beam transport
    3.
    发明申请
    Ion implanter having enhanced low energy ion beam transport 审中-公开
    离子注入机具有增强的低能量离子束传输

    公开(公告)号：US20060043316A1

    公开(公告)日：2006-03-02

    申请号：US10458037

    申请日：2003-06-10

    Applicant: Reuel Liebert ,  Harold Persing ,  James Buff

    Inventor： Reuel Liebert ,  Harold Persing ,  James Buff

    IPC: H01J37/08

    CPC classification number: H01J37/1471 ,  H01J37/3171

    Abstract: An ion implanter includes an ion source for generating an ion beam, a target site for supporting a target for ion implantation and a beamline defining a beam path between the ion source and the target site. In one aspect, a magnetic steerer is disposed between the ion source and the target site for at least partially correcting unwanted deviation of the ion beam from the beam path. The magnetic steerer may position the ion beam relative to an entrance aperture of an ion optical element. In another aspect, the beamline includes a deceleration stage for decelerating the ion beam from a first transport energy to a second transport energy. The deceleration stage includes two or more electrodes, wherein at least one of the electrodes is a grid electrode positioned in the beam path.

    Abstract translation: 离子注入机包括用于产生离子束的离子源，用于支撑用于离子注入的靶的靶位点和限定离子源与靶位点之间的束路径的束线。 一方面，磁离子源设置在离子源和目标部位之间，用于至少部分地校正离子束与束路径的不期望的偏差。 磁力搅拌器可以相对于离子光学元件的入口孔定位离子束。 在另一方面，束线包括用于将离子束从第一输送能量减速到第二输送能量的减速阶段。 减速阶段包括两个或更多个电极，其中至少一个电极是位于光束路径中的栅电极。

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