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    Techniques for temperature controlled ion implantation
    2.
    发明申请
    Techniques for temperature controlled ion implantation 有权
    温度控制离子注入技术

    公开(公告)号：US20080076194A1

    公开(公告)日：2008-03-27

    申请号：US11525878

    申请日：2006-09-23

    申请人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    发明人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    IPC分类号： H01L21/425

    CPC分类号： H01J37/3171 ,  H01J2237/2001

    摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

    摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

    In situ surface contamination removal for ion implanting
    3.
    发明授权
    In situ surface contamination removal for ion implanting 有权
    用于离子注入的原位表面污染去除

    公开(公告)号：US07544959B2

    公开(公告)日：2009-06-09

    申请号：US12099420

    申请日：2008-04-08

    申请人： Steven R. Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

    发明人： Steven R. Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

    IPC分类号： H01J37/317 ,  H01J37/36 ,  H01L21/302

    CPC分类号： C03C23/0055 ,  B08B7/0057 ,  B08B7/0071 ,  C03C15/00 ,  C03C23/002 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/26513

    摘要： Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.

    摘要翻译： 公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。 去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。 结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。 该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。

    Non-uniform ion implantation
    6.
    发明授权
    Non-uniform ion implantation 有权
    非均匀离子注入

    公开(公告)号：US07544957B2

    公开(公告)日：2009-06-09

    申请号：US11441633

    申请日：2006-05-26

    申请人： Steven R. Walther ,  Sandeep Mehta

    发明人： Steven R. Walther ,  Sandeep Mehta

    IPC分类号： H01J37/08 ,  G21K5/10

    CPC分类号： H01J37/3171 ,  H01J37/3026 ,  H01J37/3172 ,  H01J2237/30461 ,  H01J2237/30472 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/3171

    摘要： A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

    摘要翻译： 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。

    IN SITU SURFACE CONTAMINATION REMOVAL FOR ION IMPLANTING
    8.
    发明申请
    IN SITU SURFACE CONTAMINATION REMOVAL FOR ION IMPLANTING 有权
    用于离子植入的现场表面污染除去

    公开(公告)号：US20080185537A1

    公开(公告)日：2008-08-07

    申请号：US12099420

    申请日：2008-04-08

    申请人： Steve Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

    发明人： Steve Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

    IPC分类号： H01J37/08

    CPC分类号： C03C23/0055 ,  B08B7/0057 ,  B08B7/0071 ,  C03C15/00 ,  C03C23/002 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/26513

    摘要： Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.

    摘要翻译： 公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。 去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。 结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。 该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。

    Ion implant beam angle integrity monitoring and adjusting
    9.
    发明申请
    Ion implant beam angle integrity monitoring and adjusting 失效
    离子注入束角完整性监测和调整

    公开(公告)号：US20070045569A1

    公开(公告)日：2007-03-01

    申请号：US11217700

    申请日：2005-08-31

    申请人： Steven Walther ,  Ukyo Jeong ,  Sandeep Mehta

    发明人： Steven Walther ,  Ukyo Jeong ,  Sandeep Mehta

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528

    摘要： A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.

    摘要翻译： 公开了一种用于监测由离子注入机系统产生的离子束的束角完整性的系统，方法和程序产品。 本发明利用至少一个模板，每个模板具有阻碍离子运动的模板表面。 每个模板被配置成使得如果模板的轨迹偏离最佳轨迹预定的最大方差角，则离子冲击模板的表面。 然后测量由离子与模板和/或靶的影响引起的变化，以确定离子束中的方差量。 然后可以对离子束发生器进行调整，以校正未对准的光束。

    Ion implant beam angle integrity monitoring and adjusting
    10.
    发明授权
    Ion implant beam angle integrity monitoring and adjusting 失效
    离子注入束角完整性监测和调整

    公开(公告)号：US07459703B2

    公开(公告)日：2008-12-02

    申请号：US11217700

    申请日：2005-08-31

    申请人： Steven Walther ,  Ukyo Jeong ,  Sandeep Mehta

    发明人： Steven Walther ,  Ukyo Jeong ,  Sandeep Mehta

    IPC分类号： G21K5/10

    CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528

    摘要： A system, method and program product for monitoring the beam angle integrity of an ion beam generated by an ion implanter system are disclosed. The invention utilizes at least one template with each template having a template surface that impedes the motion of an ion. Each template is configured such that an ion impacts the surface of the template if the trajectory of the template deviates from the optimum trajectory by a pre-determined maximum variance angle. The change caused by the impact of the ions with the template and/or a target is then measured to determine the amount of variance in the ion beam. Adjustments can then be made to the ion beam generator to correct for a misaligned beam.

    摘要翻译： 公开了一种用于监测由离子注入机系统产生的离子束的束角完整性的系统，方法和程序产品。 本发明利用至少一个模板，每个模板具有阻碍离子运动的模板表面。 每个模板被配置成使得如果模板的轨迹偏离最佳轨迹预定的最大方差角，则离子冲击模板的表面。 然后测量由离子与模板和/或靶的影响引起的变化，以确定离子束中的方差量。 然后可以对离子束发生器进行调整，以校正未对准的光束。