公开(公告)号：US11036565B2

公开(公告)日：2021-06-15

申请号：US14292721

申请日：2014-05-30

申请人： Rex Young

发明人： Rex Young

IPC分类号： G06F9/54 ,  G06F9/455 ,  G06F9/448

摘要： Technology is disclosed for processing in a computer program a request received by a service virtual machine (SVM). The technology can receive a request in either a first form or a second form, wherein the first form includes a target textual identifier, a reply-to textual identifier, and a parameter, and the second form includes a target textual identifier and a parameter, but not a reply-to textual identifier; identify, based on the received target textual identifier, a procedure; invoke the identified procedure and providing a value of the received parameter to the invoked procedure; in an event the received request is in the first form: receive a result from the invoked procedure; form a reply-to request in the second form, the second form including as a target textual identifier the reply-to textual identifier in the received request, and as a parameter the result received from the invoked procedure, further wherein the second form does not include a reply-to textual identifier; and send, to the SVM, the formed reply-to request.

公开(公告)号：US20090307712A1

公开(公告)日：2009-12-10

申请号：US12135879

申请日：2008-06-09

申请人： Rex Young

发明人： Rex Young

IPC分类号： G06F9/54

CPC分类号： G06F9/546

摘要： An actor virtual machine is described. In various embodiments, the actor virtual machine (AVM) implements a practicable message-passing model in a computer programming language that supports components and concurrent execution. The model includes receiving by a first actor virtual machine a message from a first component wherein the received message includes no addressing information; identifying from a stored routing rule a second component to which the received message should be forwarded; and forwarding the received message to the identified second component, wherein the first actor virtual machine, the first component, and the second component are all components of an executing software application.

摘要翻译： 描述了一个演员虚拟机。 在各种实施例中，行为者虚拟机（AVM）以支持组件和并发执行的计算机编程语言实现可行的消息传递模型。 该模型包括由第一演员虚拟机接收来自第一组件的消息，其中所接收的消息不包括寻址信息; 从存储的路由规则识别接收到的消息应转发到的第二组件; 以及将所接收的消息转发到所识别的第二组件，其中所述第一操作者虚拟机，所述第一组件和所述第二组件都是执行软件应用程序的组件。

公开(公告)号：US20080153289A1

公开(公告)日：2008-06-26

申请号：US12041676

申请日：2008-03-04

申请人： Min-San Huang ,  Dah-Chuan Chen ,  Rex Young

发明人： Min-San Huang ,  Dah-Chuan Chen ,  Rex Young

IPC分类号： H01L21/768

CPC分类号： H01L21/76897 ,  H01L29/42328 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device is disclosed. The method is suitable for a substrate having a first conducting structure and a first dielectric layer, wherein the dielectric layer covers the first conductive structure. The method includes the steps of forming a second conductive structure over the substrate adjacent to the first conductive structure. Then, the size of the second conductive structure is reduced so that a top surface of the second conductive structure is relatively lower than that of the first conductive structure. Thereafter, a second dielectric layer is formed over the substrate to cover the first and the second conductive structure. A via is formed in the second dielectric layer to expose the top surface of the first conductive structure. Finally, a via plug is formed in the via.

摘要翻译： 公开了一种制造半导体器件的方法。 该方法适用于具有第一导电结构和第一介电层的基板，其中介电层覆盖第一导电结构。 该方法包括以下步骤：在与第一导电结构相邻的衬底上形成第二导电结构。 然后，第二导电结构的尺寸减小，使得第二导电结构的顶表面相对低于第一导电结构的顶表面。 此后，在衬底上形成第二电介质层以覆盖第一和第二导电结构。 在第二电介质层中形成通孔以露出第一导电结构的顶表面。 最后，在通孔中形成通孔塞。

公开(公告)号：US07316956B2

公开(公告)日：2008-01-08

申请号：US11163892

申请日：2005-11-03

申请人： Rex Young ,  Liang-Chuan Lai

发明人： Rex Young ,  Liang-Chuan Lai

IPC分类号： H01L21/336

CPC分类号： H01L29/7881 ,  H01L21/76889 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11539 ,  H01L29/665 ,  H01L29/66825

摘要： A method for fabricating a wire with silicide is disclosed. First, a conductive layer is formed on a substrate. And, a hard mask layer is formed on the conductive layer. Then, the hard mask layer is used as a mask to remove a portion of the conductive layer. Afterwards, a spacer is formed on the sidewalls of the conductive layer and the hard mask layer. Afterwards, the hard mask layer is removed. Next, a silicide is formed on the conductive layer.

摘要翻译： 公开了一种用硅化物制造导线的方法。 首先，在基板上形成导电层。 并且，在导电层上形成硬掩模层。 然后，将硬掩模层用作掩模以去除导电层的一部分。 之后，在导电层和硬掩模层的侧壁上形成间隔物。 之后，去除硬掩模层。 接下来，在导电层上形成硅化物。

公开(公告)号：US20090130808A1

公开(公告)日：2009-05-21

申请号：US11942718

申请日：2007-11-20

申请人： Chao-Yuan Lo ,  Rex Young ,  Pin-Yao Wang

发明人： Chao-Yuan Lo ,  Rex Young ,  Pin-Yao Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/7881 ,  H01L27/11521 ,  H01L29/66825

摘要： A method of fabricating a flash memory includes successively forming a floating gate insulating layer, a floating gate material layer, a dielectric layer, a control gate material layer, a silicide layer, and a hard mask layer on a semiconductor substrate, patterning the hard mask layer, removing portions of the silicide layer, the control gate material layer, the dielectric layer, and the floating gate material layer not covered by the hard mask layer to form a stacked structure, forming a silicon cap layer covering the surface of the stacked structure, and performing a thermal process.

摘要翻译： 制造闪速存储器的方法包括在半导体衬底上依次形成浮置栅极绝缘层，浮栅材料层，电介质层，控制栅极材料层，硅化物层和硬掩模层，使硬掩模 除去未被硬掩模层覆盖的硅化物层的部分，控制栅材料层，电介质层和浮栅材料层，形成层叠结构，形成覆盖层叠结构的表面的硅覆盖层 ，并进行热处理。

公开(公告)号：USD577849S1

公开(公告)日：2008-09-30

申请号：US29277781

申请日：2007-03-09

申请人： Rex Young

设计人： Rex Young

公开(公告)号：US20080224202A1

公开(公告)日：2008-09-18

申请号：US12129652

申请日：2008-05-29

申请人： Rex Young ,  Pin-Yao Wang

发明人： Rex Young ,  Pin-Yao Wang

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L29/7851

摘要： A non-volatile memory includes a substrate, a number of isolation layers, a number of active layers, a number of floating gates, a number of control gates and a number of doped regions. The active layers are disposed in the substrate between the isolation layers, and the top surface of the active layer is higher than that of the isolation layer. The active layers and the isolation layers are arranged in parallel to each other and extend in the first direction. The control gates are disposed in the substrate. The control gates are arranged in parallel and extend in the second direction which crosses the first direction. The floating gates are disposed between the active layers and the control gates. The doped regions are disposed in the active layers between the control gates.

摘要翻译： 非易失性存储器包括衬底，多个隔离层，多个有源层，多个浮置栅极，多个控制栅极和多个掺杂区域。 有源层设置在隔离层之间的衬底中，并且有源层的顶表面高于隔离层的顶表面。 有源层和隔离层彼此平行地布置并沿着第一方向延伸。 控制栅极设置在基板中。 控制门平行布置并沿与第一方向交叉的第二方向延伸。 浮动栅极设置在有源层和控制栅极之间。 掺杂区域设置在控制栅极之间的有源层中。

公开(公告)号：US07354851B2

公开(公告)日：2008-04-08

申请号：US11161080

申请日：2005-07-22

申请人： Rex Young ,  Pin-Yao Wang

发明人： Rex Young ,  Pin-Yao Wang

IPC分类号： H01L21/4763

CPC分类号： H01L21/02057 ,  H01L21/02068 ,  H01L29/66181 ,  H01L29/66825

摘要： A method for fabricating a semiconductor device is described. The method includes providing a substrate having a trench therein, and a trench device in the trench. The trench device includes two gate structures disposed on the sidewalls of the trench, a doped region in the substrate between the gate structures and an inter-gate dielectric layer disposed on the surface of the gate structures. A thermal treatment process in a nitrogen-containing ambient is performed to remove the native oxide layer formed on the surface of the doped region. Then, a conductive layer is formed to fill in the trench.

摘要翻译： 对半导体装置的制造方法进行说明。 该方法包括提供其中具有沟槽的衬底和沟槽中的沟槽器件。 沟槽器件包括设置在沟槽的侧壁上的两个栅极结构，在栅极结构之间的衬底中的掺杂区域和设置在栅极结构的表面上的栅极间电介质层。 进行含氮环境中的热处理工艺以去除在掺杂区域的表面上形成的自然氧化物层。 然后，形成导电层以填充沟槽。

公开(公告)号：US20060252210A1

公开(公告)日：2006-11-09

申请号：US11163892

申请日：2005-11-03

申请人： Rex Young ,  Liang-Chuan Lai

发明人： Rex Young ,  Liang-Chuan Lai

IPC分类号： H01L21/8234

CPC分类号： H01L29/7881 ,  H01L21/76889 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11539 ,  H01L29/665 ,  H01L29/66825

摘要： A method for fabricating a wire with silicide is disclosed. First, a conductive layer is formed on a substrate. And, a hard mask layer is formed on the conductive layer. Then, the hard mask layer is used as a mask to remove a portion of the conductive layer. Afterwards, a spacer is formed on the sidewalls of the conductive layer and the hard mask layer. Afterwards, the hard mask layer is removed. Next, a silicide is formed on the conductive layer.

摘要翻译： 公开了一种用硅化物制造导线的方法。 首先，在基板上形成导电层。 并且，在导电层上形成硬掩模层。 然后，将硬掩模层用作掩模以去除导电层的一部分。 之后，在导电层和硬掩模层的侧壁上形成间隔物。 之后，去除硬掩模层。 接下来，在导电层上形成硅化物。

公开(公告)号：US20060183311A1

公开(公告)日：2006-08-17

申请号：US11162081

申请日：2005-08-29

申请人： Min-San Huang ,  Dah-Chuan Chen ,  Rex Young

发明人： Min-San Huang ,  Dah-Chuan Chen ,  Rex Young

IPC分类号： H01L21/44

CPC分类号： H01L21/76897 ,  H01L29/42328 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device is disclosed suitable for a substrate having a first conducting structure and a first dielectric layer, wherein the dielectric layer covers the first conductive structure. The method includes the steps of forming a second conductive structure over the substrate adjacent to the first conductive structure. Then, the size of the second conductive structure is reduced so that a top surface of the second conductive structure is relatively lower than that of the first conductive structure. Thereafter, a second dielectric layer is formed over the substrate to cover the first and the second conductive structure. A via is formed in the second dielectric layer to expose the top surface of the first conductive structure. Finally, a via plug is formed in the via.

摘要翻译： 公开了一种用于制造半导体器件的方法，其适用于具有第一导电结构和第一介电层的衬底，其中介电层覆盖第一导电结构。 该方法包括以下步骤：在与第一导电结构相邻的衬底上形成第二导电结构。 然后，第二导电结构的尺寸减小，使得第二导电结构的顶表面相对低于第一导电结构的顶表面。 此后，在衬底上形成第二电介质层以覆盖第一和第二导电结构。 在第二电介质层中形成通孔以露出第一导电结构的顶表面。 最后，在通孔中形成通孔塞。