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公开(公告)号：US5330855A
公开(公告)日：1994-07-19
申请号：US764203
申请日：1991-09-23
CPC分类号： B82Y30/00 , B82Y15/00 , C30B23/002 , C30B23/02 , C30B29/16 , G01N31/223 , G01N31/225 , Y10T428/24975 , Y10T428/265
摘要： A planar epitaxial film of tin oxide has low defect density, high purity, crystalline rutile unit cell structure, one crystalline orientation, controlled stoichiometry, extended lateral dimensions, extremely smooth surface morphology, a high degree of atomic order extending to the surface of the film and is colorless and transparent. The film is made by a method which includes reactive sputter deposition. The films can be used in chemical sensors as well as in numerous other applications.
摘要翻译： 氧化锡的平面外延膜具有低缺陷密度，高纯度，结晶金红石晶胞结构，一个晶体取向，受控化学计量，延伸的横向尺寸，极其平滑的表面形态，延伸到薄膜表面的高度原子序列 无色透明。 该膜通过包括反应性溅射沉积的方法制成。 这些胶片可用于化学传感器以及许多其他应用中。
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2.发明授权
公开(公告)号：US06095681A
公开(公告)日：2000-08-01
申请号：US123510
申请日：1998-07-28
CPC分类号： G01N27/124
摘要： Disclosed is a method for operating a sensor to differentiate between first and second analytes in a sample. The method comprises the steps of determining a input profile for the sensor which will enhance the difference in the output profiles of the sensor as between the first analyte and the second analyte; determining a first analyte output profile as observed when the input profile is applied to the sensor; determining a second analyte output profile as observed when the temperature profile is applied to the sensor; introducing the sensor to the sample while applying the temperature profile to the sensor, thereby obtaining a sample output profile; and evaluating the sample output profile as against the first and second analyte output profiles to thereby determine which of the analytes is present in the sample.
摘要翻译： 公开了一种用于操作传感器以区分样品中的第一和第二分析物的方法。 该方法包括以下步骤：确定传感器的输入轮廓，其将增强传感器在第一分析物和第二分析物之间的输出轮廓的差异; 确定当所述输入轮廓被施加到所述传感器时观察到的第一分析物输出轮廓; 确定当温度分布被施加到传感器时观察到的第二分析物输出分布; 将传感器引入样品，同时将温度曲线应用于传感器，从而获得样品输出分布; 并且根据第一和第二分析物输出分布来评估样品输出分布，从而确定样品中存在哪种分析物。
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公开(公告)号：US08324703B2
公开(公告)日：2012-12-04
申请号：US12111696
申请日：2008-04-29
IPC分类号： H01L31/107
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , C01G9/03 , C01P2004/03 , C01P2004/16 , G01N27/414 , H01L29/0673 , H01L29/22
摘要： An in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles is provided. The utility of the approach is demonstrated by development of a gas sensing device employing the nanowire assembly. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550° C. on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed.
摘要翻译： 提供了使用导电纳米颗粒连接和电接触垂直排列的纳米线阵列的原位方法。 通过开发采用纳米线组件的气体感测装置来证明该方法的实用性。 通过直接热蒸发法在550℃下在金催化剂层上生长良好对准的单晶氧化锌纳米线。 通过将导电金纳米粒子静电附着在纳米线的尖端上，形成连续的纳米颗粒膜来建立与纳米线阵列顶部的电接触。 使用这种布置构造气体传感装置，发现纳米线组件对还原（甲醇）和氧化（一氧化二氮）气体都敏感。 该组装方法适用于需要顶部接触电极的任何纳米线阵列。
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公开(公告)号：US20090032801A1
公开(公告)日：2009-02-05
申请号：US12111696
申请日：2008-04-29
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , C01G9/03 , C01P2004/03 , C01P2004/16 , G01N27/414 , H01L29/0673 , H01L29/22
摘要： An in situ approach toward connecting and electrically contacting vertically aligned nanowire arrays using conductive nanoparticles is provided. The utility of the approach is demonstrated by development of a gas sensing device employing the nanowire assembly. Well-aligned, single-crystalline zinc oxide nanowires were grown through a direct thermal evaporation process at 550° C. on gold catalyst layers. Electrical contact to the top of the nanowire array was established by creating a contiguous nanoparticle film through electrostatic attachment of conductive gold nanoparticles exclusively onto the tips of nanowires. A gas sensing device was constructed using such an arrangement and the nanowire assembly was found to be sensitive to both reducing (methanol) and oxidizing (nitrous oxides) gases. This assembly approach is amenable to any nanowire array for which a top contact electrode is needed.
摘要翻译： 提供了使用导电纳米颗粒连接和电接触垂直排列的纳米线阵列的原位方法。 通过开发采用纳米线组件的气体感测装置来证明该方法的实用性。 通过直接热蒸发法在550℃下在金催化剂层上生长良好对准的单晶氧化锌纳米线。 通过将导电金纳米粒子静电附着在纳米线的尖端上，通过产生连续的纳米颗粒膜来建立与纳米线阵列顶部的电接触。 使用这种布置构造气体传感装置，发现纳米线组件对还原（甲醇）和氧化（一氧化二氮）气体都敏感。 该组装方法适用于需要顶部接触电极的任何纳米线阵列。
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公开(公告)号：US6079873A
公开(公告)日：2000-06-27
申请号：US107064
申请日：1998-06-30
CPC分类号： G01N25/4866
摘要： A differential scanning microcalorimeter produced on a silicon chip enables microscopic scanning calorimetry measurements of small samples and thin films. The chip may be fabricated using standard CMOS processes. The microcalorimeter includes a reference zone and a sample zone. The reference and sample zones may be at opposite ends of a suspended platform or may reside on separate platforms. An integrated polysilicon heater provides heat to each zone. A thermopile consisting of a succession of thermocouple junctions generates a voltage representing the temperature difference between the reference and sample zones. Temperature differences between the zones provide information about the chemical reactions and phase transitions that occur in a sample placed in the sample zone.
摘要翻译： 在硅芯片上制造的差示扫描微量热计可以对小样品和薄膜进行显微扫描量热测量。 芯片可以使用标准CMOS工艺制造。 微量热计包括参考区和样品区。 参考区域和采样区域可以位于悬挂平台的相对端，或者可以驻留在单独的平台上。 集成多晶硅加热器为每个区域提供热量。 由一系列热电偶结组成的热电堆产生表示参考区和样品区之间温差的电压。 区域之间的温度差异提供了有关放置在样品区域中的样品中发生的化学反应和相变的信息。
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公开(公告)号：US5464966A
公开(公告)日：1995-11-07
申请号：US965947
申请日：1992-10-26
IPC分类号： B01L3/00 , B01L7/00 , G01N27/12 , G01N27/18 , H05B3/14 , H05B3/26 , H05B3/00 , G01F1/68 , H01C1/012
CPC分类号： B01L7/00 , G01N27/18 , H05B3/148 , B01L2200/147 , B01L2300/1827 , B01L2300/1883 , H05B2203/003 , H05B2213/07
摘要： A design and fabrication methodology, for silicon micromachined micro-hotplates which are manufactured using commercial CMOS foundries techniques with additional post-fabrication processing. The micro-hotplates are adaptable for a host of applications. The methodology for the fabrication of the micro-hotplates is based on commercial CMOS compatible micromachining techniques. The novel aspects of the micro-hotplates are in the design, choice and layout of the materials layers, and the applications for the devices. The micro-hotplates have advantages over other similar devices in the manufacture by a standard CMOS process which include low-cost and easy integration of VLSI circuits for drive, communication, and control. The micro-hotplates can be easily incorporated into arrays of micro-hotplates each with individualized circuits for control and sensing for independent operation.
摘要翻译： 用于硅微加工微电镀的设计和制造方法，其使用商业CMOS铸造技术制造，并具有额外的后制造处理。 微电镀适用于大量应用。 用于制造微电炉的方法基于商业CMOS兼容微加工技术。 微电镀的新颖方面在于材料层的设计，选择和布局以及器件的应用。 微电炉具有通过标准CMOS工艺制造的其他类似器件的优点，其包括用于驱动，通信和控制的VLSI电路的低成本且容易的集成。 微电炉可以容易地并入微电炉的阵列中，每个微电炉具有用于独立操作的用于控制和感测的单独电路。
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7.发明授权Temperature-controlled, micromachined arrays for chemical sensor fabrication and operation 失效用于化学传感器制造和操作的温度控制的微加工阵列
公开(公告)号：US5345213A
公开(公告)日：1994-09-06
申请号：US965949
申请日：1992-10-26
CPC分类号： B01L7/54 , G01N27/18 , B01L2300/1827 , B01L2300/1883 , B01L3/5027 , G01N2035/00237
摘要： Planar forms of chemically-sensitive materials have been combined, under temperature control, with the pixels of a specially-designed micro-hotplate array to produce a miniature device capable of analyzing chemical mixtures. The device uses integrated multiple elements having different adsorption properties and temperatures to collectively achieve chemical selectivity in sensing. The method of making and using selectively in sensing. The device of the present invention is manufactured by standard CMOS foundry techniques which allow the production of a range of devices that have improved sensing performance.
摘要翻译： 化学敏感材料的平面形式已经在温度控制下与专门设计的微电子加热板阵列的像素组合，以生产能够分析化学混合物的微型装置。 该装置使用具有不同吸附特性和温度的集成多元素以共同实现感测中的化学选择性。 在感测中选择性地制作和使用的方法。 本发明的器件通过标准的CMOS铸造技术制造，这些技术允许生产具有改进的感测性能的一系列器件。
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