公开(公告)号：US4234351A

公开(公告)日：1980-11-18

申请号：US924733

申请日：1978-07-14

申请人： Czeslaw Deminet ,  Richard E. Oettel

发明人： Czeslaw Deminet ,  Richard E. Oettel

IPC分类号： C03B13/12 ,  C03B13/14 ,  H01L31/048 ,  H01L31/18 ,  H01L31/04

CPC分类号： H01L31/188 ,  C03B13/12 ,  C03B13/14 ,  H01L31/048 ,  Y02E10/50

摘要： The process includes the steps of (1) forming a pattern of indentations and adjacent boundary ridges in a base layer of glass which is heated to a temperature where it is formable but not flowing, (2) depositing electrically conducting first connecting elements on the upper surface of the base glass layer, with each first connecting element extending from an indentation to a point on an adjacent ridge, (3) positioning a solar cell into each indentation in the base glass layer in such a manner that the lower surface of the solar cell comes in electrical contact with one end of a first connecting element, (4) depositing electrically conducting second connecting elements which extend between the end of the first connecting elements on a ridge to the top surface of a solar cell in an adjacent indentation, and (5) forming a top glass layer which is in intimate contact with the product of steps 1-4. The product produced thereby is an array of glass-encapsulated solar cells which are electrically connected together by means of the first and second connecting elements but are otherwise physically isolated from each other by the glass-encapsulation.

摘要翻译： 该方法包括以下步骤：（1）在玻璃基层中形成压痕图案和相邻的边界脊，其加热到可形成但不流动的温度，（2）将导电的第一连接元件沉积在上层 基底玻璃层的表面，每个第一连接元件从凹槽延伸到相邻脊上的点，（3）将太阳能电池定位在基底玻璃层中的每个凹陷中，使得太阳能的下表面 电池与第一连接元件的一端电接触，（4）沉积导电的第二连接元件，其在脊的第一连接元件的端部与相邻的凹陷中的太阳能电池的顶表面之间延伸;以及 （5）形成与步骤1-4的产品紧密接触的顶部玻璃层。 由此产生的产品是玻璃封装的太阳能电池阵列，它们通过第一和第二连接元件电连接在一起，而另外通过玻璃封装彼此物理隔离。

公开(公告)号：US4152535A

公开(公告)日：1979-05-01

申请号：US702416

申请日：1976-07-06

申请人： Czeslaw Deminet ,  William E. Horne ,  Richard E. Oettel

发明人： Czeslaw Deminet ,  William E. Horne ,  Richard E. Oettel

IPC分类号： C30B1/02 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/18 ,  B08B3/00

CPC分类号： H01L31/186 ,  C30B1/02 ,  H01L31/03682 ,  H01L31/03921 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/12

摘要： The process comprises the following steps: (1) forming a glass sheet which defines a substrate layer for the solar cell product; (2) forming a diffusion barrier layer on at least one surface of the substrate; (3) forming a first electrically-conductive layer on the diffusion barrier, the first electrically-conductive layer being a first electrode in the solar cell product; (4) depositing small-grain polycrystalline silicon in a thin film, i.e., 10-100 micrometers, on the first electrode layer; (5) recrystallizing, typically by heating, the deposited polycrystalline silicon until it reforms into large-grain polycrystalline or single-crystal silicon; (6) forming a PN junction in the recrystallized silicon layer; and (7) forming a second electrically-conductive layer on the recrystallized silicon layer, the second electrically-conductive layer being a second electrode in the solar cell product. The solar cell product produced by the above-process may be fabricated in large surface area configurations, suitable for terrestrial as well as extra-terrestrial use, at relatively low cost.

摘要翻译： 该方法包括以下步骤：（1）形成限定太阳能电池产品的基底层的玻璃板; （2）在所述基板的至少一个表面上形成扩散阻挡层; （3）在扩散阻挡层上形成第一导电层，第一导电层是太阳能电池产品中的第一电极; （4）在第一电极层上沉积薄晶粒（即10-100微米）的小晶粒多晶硅; （5）通常通过加热重结晶沉积的多晶硅，直到其重新形成大晶粒多晶或单晶硅; （6）在再结晶硅层中形成PN结; 和（7）在再结晶硅层上形成第二导电层，第二导电层是太阳能电池产品中的第二电极。 通过上述方法生产的太阳能电池产品可以以相对较低的成本制成适合陆地和陆地外用途的大表面积配置。

公开(公告)号：US5097422A

公开(公告)日：1992-03-17

申请号：US374485

申请日：1989-06-29

申请人： Ludlow V. Corbin, II ,  Steven G. Danielson ,  Richard E. Oettel ,  Mark E. Rossman ,  James E. Thiele

发明人： Ludlow V. Corbin, II ,  Steven G. Danielson ,  Richard E. Oettel ,  Mark E. Rossman ,  James E. Thiele

IPC分类号： G06F17/50

CPC分类号： G06F17/5068

摘要： A method and apparatus for determining integrated circuit layouts from a virtual circuit description and specification of a technology. Starting with high-level descriptions of a circuit, a virtual geometric description of the circuit is developed using a virtual grid described in terms of reference points relative to a substrate surface. The relationships among the reference points are expressed as fractions of variables that can also be used to define the design rules. When the technology is specified, the relationships among the reference points is determined, as in the layout of the integrated circuit.

摘要翻译： 一种用于从虚拟电路描述和技术规范确定集成电路布局的方法和装置。 从电路的高级描述开始，利用相对于衬底表面的参考点描述的虚拟网格来开发电路的虚拟几何描述。 参考点之间的关系表示为也可用于定义设计规则的变量的分数。 当指定技术时，确定参考点之间的关系，如集成电路的布局。