公开(公告)号：USD680505S1

公开(公告)日：2013-04-23

申请号：US29413509

申请日：2012-02-16

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

设计人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

公开(公告)号：USD664512S1

公开(公告)日：2012-07-31

申请号：US29389794

申请日：2011-04-15

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

设计人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

公开(公告)号：USD690278S1

公开(公告)日：2013-09-24

申请号：US29413539

申请日：2012-02-16

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

设计人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

公开(公告)号：US20130143390A1

公开(公告)日：2013-06-06

申请号：US13809816

申请日：2011-07-13

申请人： Rie Katou ,  Takayuki Matsuzaki ,  Shinya Katou ,  Ryoji Furutani ,  Tatsuya Sakuta ,  Kouji Komorida

发明人： Rie Katou ,  Takayuki Matsuzaki ,  Shinya Katou ,  Ryoji Furutani ,  Tatsuya Sakuta ,  Kouji Komorida

IPC分类号： H01L21/683 ,  H01L21/78

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68377 ,  Y10T156/1062 ,  Y10T428/21

摘要： A dicing/die bonding integral film of the present invention includes a base film, a pressure-sensitive adhesive layer which is formed on the base film and to which a wafer ring for blade dicing is bonded, and a bonding layer formed on the adhesive layer and having a central portion to which a semiconductor wafer to be diced is bonded, wherein a planar shape of the bonding layer is circular, an area of the bonding layer is greater than an area of the semiconductor wafer and smaller than an area of each of the base film and the adhesive layer, and a diameter of the bonding layer is greater than a diameter of the semiconductor wafer and less than an inner diameter of the wafer ring, and a difference in diameter between the bonding layer and the semiconductor wafer is greater than 20 mm and less than 35 mm,

摘要翻译： 本发明的切割/裸片接合一体膜包括基膜，形成在基膜上并且用于切割用于切片的晶片环的粘合剂层和形成在粘合剂层上的粘合层 并且具有要被切割的半导体晶片被接合的中心部分，其中所述接合层的平面形状是圆形的，所述接合层的面积大于所述半导体晶片的面积，并且小于所述半导体晶片的面积 基底膜和粘合剂层，并且接合层的直径大于半导体晶片的直径并且小于晶片环的内径，并且接合层和半导体晶片之间的直径差较大 大于20mm且小于35mm，

公开(公告)号：US20120171475A1

公开(公告)日：2012-07-05

申请号：US13383755

申请日：2010-07-09

申请人： Ryoji Furutani ,  Takahiro Tokuyasu ,  Shinya Katou ,  Rie Katou ,  Tomohito Yuasa ,  Kouji Komorida ,  Tatsuya Sakuta

发明人： Ryoji Furutani ,  Takahiro Tokuyasu ,  Shinya Katou ,  Rie Katou ,  Tomohito Yuasa ,  Kouji Komorida ,  Tatsuya Sakuta

IPC分类号： B32B3/00 ,  B32B7/12 ,  B32B38/10

CPC分类号： C09J7/0239 ,  C09J7/22 ,  C09J7/30 ,  C09J2201/28 ,  C09J2203/326 ,  Y10T156/108 ,  Y10T156/1082 ,  Y10T156/1168 ,  Y10T156/1195 ,  Y10T428/265 ,  Y10T428/28

摘要： A method for manufacturing an adhesive sheet according to the present invention is a method for manufacturing an adhesive sheet including a long peeling base material 1 and an adhesive layer 2 provided on the peeling base material 1 in the form of an island, the method including a peeling step of, after laminating a long adhesive layer 2 on the peeling base material 1, peeling off an unnecessary portion 6 of the adhesive layer 2 so that a predetermined portion of the adhesive layer is left on the peeling base material 1 in the form of an island, wherein, in the peeling step, the width W of a narrow portion 8, which is the narrowest in width in a short direction of the unnecessary portion 6 of the adhesive layer 2, is adjusted so that the breaking strength in the narrow portion 8 is 200 g or more.

摘要翻译： 根据本发明的粘合片的制造方法是一种粘合片的制造方法，该粘合片包括长条剥离基材1和设置在岛状剥离基材1上的粘合层2，该方法包括： 剥离步骤，在剥离基材1上层压长粘合剂层2之后，剥离粘合剂层2的不需要部分6，使得粘合剂层的预定部分留在剥离基材1上，形式为 其中，在剥离步骤中，调整粘合剂层2的不需要部分6的短边方向上最窄的狭窄部分8的宽度W，使得狭窄部分8中的断裂强度 部分8为200g以上。

公开(公告)号：US20120094471A1

公开(公告)日：2012-04-19

申请号：US13274288

申请日：2011-10-14

申请人： Kouhei TANIGUCHI ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

发明人： Kouhei TANIGUCHI ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

IPC分类号： H01L21/78 ,  B32B37/14 ,  B32B33/00 ,  B32B37/12

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J7/403 ,  C09J2201/122 ,  C09J2201/20 ,  C09J2201/28 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2203/326 ,  H01L21/568 ,  H01L21/67132 ,  H01L21/78 ,  H01L23/3135 ,  H01L2924/0002 ,  Y10T156/10 ,  Y10T156/1052 ,  Y10T428/1476 ,  H01L2924/00

摘要： In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release base material from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased. Methods of manufacturing the tape and a semiconductor device are also provided.

摘要翻译： 在晶片处理带中，如平面图所示，面对粘合剂层的中心的圆形或舌形切口部分形成为对应于到晶片环的粘贴区域到达到释放基底的深度 材料从基材膜的侧面。 由于形成切口部分，当剥离力作用在晶片处理带上时，首先剥离比缺口部分更向外的粘性材料层和基材膜的部分，并且更多的部分 向内比缺口部分保持在晶片环上处于突出状态。 因此，可以提高晶片处理带和晶片环之间的剥离强度。 还提供了制造带和半导体器件的方法。

公开(公告)号：USD656909S1

公开(公告)日：2012-04-03

申请号：US29389788

申请日：2011-04-15

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

设计人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

公开(公告)号：US09076833B2

公开(公告)日：2015-07-07

申请号：US13878985

申请日：2011-10-12

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

发明人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/56 ,  H01L21/67 ,  H01L23/31 ,  H01L21/78

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J7/403 ,  C09J2201/122 ,  C09J2201/20 ,  C09J2201/28 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2203/326 ,  H01L21/568 ,  H01L21/67132 ,  H01L21/78 ,  H01L23/3135 ,  H01L2924/0002 ,  Y10T156/10 ,  Y10T156/1052 ,  Y10T428/1476 ,  H01L2924/00

摘要： In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release substrate from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased and the wafer processing tape can be suppressed from being peeled off from the wafer ring during processes.

摘要翻译： 在晶片处理带中，如平面图所示，面对粘合剂层的中心的圆形或舌状的切口部分形成为对应于到晶片环的粘贴区域到到达剥离基板的深度 从基材膜的侧面。 由于形成切口部分，当剥离力作用在晶片处理带上时，首先剥离比缺口部分更向外的粘性材料层和基材膜的部分，并且更多的部分 向内比缺口部分保持在晶片环上处于突出状态。 因此，可以提高晶片处理带和晶片环之间的剥离强度，并且可以抑制晶片处理带在工艺期间从晶圆环剥离。

公开(公告)号：US09076832B2

公开(公告)日：2015-07-07

申请号：US13274288

申请日：2011-10-14

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

发明人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/56 ,  H01L21/67 ,  H01L23/31 ,  H01L21/78

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J7/403 ,  C09J2201/122 ,  C09J2201/20 ,  C09J2201/28 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2203/326 ,  H01L21/568 ,  H01L21/67132 ,  H01L21/78 ,  H01L23/3135 ,  H01L2924/0002 ,  Y10T156/10 ,  Y10T156/1052 ,  Y10T428/1476 ,  H01L2924/00

摘要： In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release base material from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased. Methods of manufacturing the tape and a semiconductor device are also provided.

摘要翻译： 在晶片处理带中，如平面图所示，面对粘合剂层的中心的圆形或舌形切口部分形成为对应于到晶片环的粘贴区域到达到释放基底的深度 材料从基材膜的侧面。 由于形成切口部分，当剥离力作用在晶片处理带上时，首先剥离比缺口部分更向外的粘性材料层和基材膜的部分，并且更多的部分 向内比缺口部分保持在晶片环上处于突出状态。 因此，可以提高晶片处理带和晶片环之间的剥离强度。 还提供了制造带和半导体器件的方法。

公开(公告)号：US20130273718A1

公开(公告)日：2013-10-17

申请号：US13878985

申请日：2011-10-12

申请人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

发明人： Kouhei Taniguchi ,  Takayuki Matsuzaki ,  Shinya Katou ,  Kouji Komorida ,  Michio Mashino ,  Tatsuya Sakuta ,  Rie Katou

IPC分类号： H01L21/683 ,  H01L21/78

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J7/403 ,  C09J2201/122 ,  C09J2201/20 ,  C09J2201/28 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2203/326 ,  H01L21/568 ,  H01L21/67132 ,  H01L21/78 ,  H01L23/3135 ,  H01L2924/0002 ,  Y10T156/10 ,  Y10T156/1052 ,  Y10T428/1476 ,  H01L2924/00

摘要： In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release substrate from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased and the wafer processing tape can be suppressed from being peeled off from the wafer ring during processes.

摘要翻译： 在晶片处理带中，如平面图所示，面对粘合剂层的中心的圆形或舌状的切口部分形成为对应于到晶片环的粘贴区域到到达剥离基板的深度 从基材膜的侧面。 由于形成切口部分，当剥离力作用在晶片处理带上时，首先剥离比缺口部分更向外的粘性材料层和基材膜的部分，并且更多的部分 向内比缺口部分保持在晶片环上处于突出状态。 因此，可以提高晶片处理带和晶片环之间的剥离强度，并且可以抑制晶片处理带在工艺期间从晶圆环剥离。