摘要:
A plasma sputtering system that may be used to deposit a film on a substrate such as an optical disk is disclosed. In one embodiment, the sputtering system includes a main vacuum chamber. A plurality of sputtering chambers and a load lock chamber are connected to the main vacuum chamber. An assembly of a horizontal unprocessed substrate, an inner mask, and an outer mask are pressed onto a substrate transport tray that is positioned in the load lock. The tray supports the substrate and the masks throughout the processing of the substrate. A vertical lift lowers the tray from the load lock onto a carousel. The carousel transports the tray, substrate and masks to the sputtering chambers and then back to the load lock for unloading. Other lifts raise the tray, processed substrate, and masks from the carousel to the sputtering chambers. The tray is selectively pressed against the lower access aperture of the load lock and sputtering chambers so as to isolated them from the main chamber. After processing is complete, the lift pedestal at the load lock raises the tray and the substrate and masks thereon from the carousel to the load lock, whereupon the substrate and masks are removed from the sputtering system.
摘要:
An apparatus and method for controlling and optimizing a non-planar target shape of a sputtering magnetron system are employed to minimize the redeposition of the sputtered material and optimize target erosion. The methodology is based on the integration of sputtered material from each point of the target according to its solid angle view of the rest of the target. The prospective target's geometry is optimized by analytically comparing and evaluating the methodology's results of one target geometry against that of another geometry, or by simply altering the first geometry and recalculating and comparing the results of the first geometry against the altered geometry. The target geometries may be of many different shapes including trapezoidal, cylindrical, parabolic, and elliptical, depending upon the optimum process parameters desired. A sputtering system is developed using this methodology, having a main magnet stack, a rotating magnet, a target having selected target shapes optimized for controlling erosion, downstream magnets, a substrate, and an electric field induced plasma stream.
摘要:
A plasma sputtering system is described. A substrate handling system thereof places an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask onto a tray in a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks are moved on the tray to a sputtering chamber where the substrate is sputter coated. The substrate handing system removes the processec substrate and accompanying inner and outer masks from the tray in the loadlock to an external substrate change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition.
摘要:
A substrate handling system auxiliary to a plasma sputtering system is described. The substrate handling system inserts an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask into a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks then are moved to a sputtering chamber where the substrate is coated by sputtering. Subsequently, the substrate handling system moves a processed substrate, and its accompanying inner mask and an outer mask, from the loadlock to an external disk change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Subsequently, another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition, so that the masks can be gripped without causing particulate contamination. A coated surface of the inner mask and outer mask has numerous asperities to trap sputtered material and reduce contamination.