公开(公告)号：US12062531B2

公开(公告)日：2024-08-13

申请号：US17311963

申请日：2020-04-07

Applicant: INTERPANE ENTWICKLUNGS—UND BERATUNGSGESELLSCHAFT MBH

Inventor： Dominik Wagner

IPC: C23C14/35 ,  H01J37/34

CPC classification number: H01J37/347 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3455 ,  H01J2237/332

Abstract: A method and a system for adjustable coating on a substrate using a magnetron sputtering apparatus are provided. The method comprises the steps of providing a magnetron assembly which comprises a plurality of magnets attached to a plurality of yokes and a plurality of actuating mechanisms (208), each operatively coupled to at least one of the plurality of yokes. The method further comprises automatically determining individual positions of each of the plurality of yokes of the magnetron assembly on the basis of at least one parameter, and adjusting individually positions of each of the plurality of yokes of the magnetron assembly in accordance with the automatically determined individual positions.

公开(公告)号：US11978615B2

公开(公告)日：2024-05-07

申请号：US17717521

申请日：2022-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Woo Kim ,  Sangmok Nam ,  Jaeho Byeon ,  Jongho Hyun ,  Nam-Jin Hyung

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/347 ,  C23C14/35 ,  H01J37/3435 ,  H01J37/3455 ,  H01J2237/332

Abstract: A sputtering apparatus includes a back plate supporting a sputtering target, a magnet module disposed under the back plate and including a magnet unit reciprocating in a first direction, a first shielding member attached on a portion of the magnet unit, moving together with the magnet unit, and covering at least a portion of the magnet unit, a protective sheet disposed between the back plate and the magnet module, and a second shielding member disposed between the back plate and the magnet module, and having a fixed position.

公开(公告)号：US20190189830A1

公开(公告)日：2019-06-20

申请号：US16133319

申请日：2018-09-17

Applicant: Miasolé Equipment Integration (Fujian) Co., Ltd.

Inventor： Pengjian Zhu ,  Hongxia Sun ,  Chao HU ,  Yi Shu ,  Deng Pan ,  Fan Chen ,  Guojun Xu

IPC: H01L31/18 ,  C23C14/34 ,  H01L31/0216

CPC classification number: H01L31/1868 ,  C23C14/044 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/347 ,  H01L31/02167

Abstract: The present disclosure discloses a sputter coating device and method for a solar cell. The sputter coating device includes a target for sputtering to a substrate, a blocking unit between the target and the substrate, and the orthographic projection of the blocking unit on the substrate partially coincides with the orthographic projection of the target on the substrate.

公开(公告)号：US20180261720A1

公开(公告)日：2018-09-13

申请号：US15980583

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Daniel Lee DIEHL ,  Vivek AGRAWAL ,  Anantha Subramani

IPC: H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01J37/34 ,  H01J37/32 ,  H01L31/18

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20170369985A1

公开(公告)日：2017-12-28

申请号：US15193507

申请日：2016-06-27

Applicant: Cardinal CG Company

Inventor： Klaus H. W. Hartig

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C23C14/35 ,  C23C14/351 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/347 ,  H01J2237/002

Abstract: The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

公开(公告)号：US09771648B2

公开(公告)日：2017-09-26

申请号：US11735452

申请日：2007-04-14

Applicant: Roman Chistyakov ,  Bassam Hanna Abraham

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/54 ,  C23C14/30 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/347

Abstract: A sputtering apparatus includes a chamber for containing a feed gas. An anode is positioned inside the chamber. A cathode assembly comprising target material is positioned adjacent to an anode inside the chamber. A magnet is positioned adjacent to cathode assembly. A platen that supports a substrate is positioned adjacent to the cathode assembly. An output of the power supply is electrically connected to the cathode assembly. The power supply generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge from the feed gas that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.

公开(公告)号：US09732419B2

公开(公告)日：2017-08-15

申请号：US13769108

申请日：2013-02-15

Applicant: Korea University Research and Business Foundation

Inventor： MunPyo Hong ,  You Jong Lee ,  Yun-Sung Jang ,  Jun Young Lee

IPC: C23C14/35 ,  H01J37/34 ,  C23C16/44 ,  C23C16/22 ,  C23C14/22 ,  C23C14/34 ,  B05D1/00 ,  C23C14/08 ,  C23C16/00 ,  H01J37/32 ,  H01L51/52

CPC classification number: C23C16/44 ,  B05D1/62 ,  C23C14/086 ,  C23C14/22 ,  C23C14/225 ,  C23C14/3464 ,  C23C14/35 ,  C23C16/00 ,  C23C16/22 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3417 ,  H01J37/347 ,  H01J2237/332 ,  H01L51/5256

Abstract: A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

公开(公告)号：US09399817B2

公开(公告)日：2016-07-26

申请号：US13977314

申请日：2011-09-30

Applicant: Yangchao Li ,  Bo Geng ,  Xuewei Wu ,  Guoqing Qiu ,  Xu Liu

Inventor： Yangchao Li ,  Bo Geng ,  Xuewei Wu ,  Guoqing Qiu ,  Xu Liu

IPC: C23C14/35 ,  H01J37/34

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3455 ,  H01J37/347

Abstract: Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Abstract translation: 提供了一种磁控管源，其包括目标材料，位于其上的磁控管和连接到磁控管的扫描机构，用于控制磁控管在目标材料上方的移动。 扫描机构包括桃形轨道，磁控管可移动地设置在其上; 第一驱动轴，其底端与桃形轨道的极坐标的原点连接，用于驱动桃形轨道围绕第一驱动轴的轴线旋转; 连接到第一驱动轴的第一驱动器，用于驱动第一驱动轴旋转; 以及第二驱动器，用于驱动磁控管经由传输组件沿着桃形轨迹移动。 还提供了包括磁控管的磁控溅射装置和使用磁控溅射装置的磁控溅射方法。

公开(公告)号：US20160185605A1

公开(公告)日：2016-06-30

申请号：US15063614

申请日：2016-03-08

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Inventor： Thomas A. Yager ,  Joshua Robinson

IPC: C01B31/04 ,  C23C16/26 ,  H01J37/34 ,  C23C14/14 ,  C23C14/54 ,  C23C14/34 ,  C23C16/52 ,  C23C14/02

CPC classification number: C23C14/545 ,  C01B32/186 ,  C23C14/022 ,  C23C14/14 ,  C23C14/34 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/52 ,  C23C16/545 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/022 ,  H01J2237/081 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/3323 ,  Y10T428/265 ,  Y10T428/30

Abstract: Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.

公开(公告)号：US09322096B2

公开(公告)日：2016-04-26

申请号：US13817533

申请日：2012-05-25

Applicant: Thomas A. Yager ,  Joshua Robinson

Inventor： Thomas A. Yager ,  Joshua Robinson

IPC: C23C16/00 ,  C23C16/26 ,  C23C16/02 ,  C23C16/54

CPC classification number: C01B31/0453 ,  C01B32/186 ,  C23C14/022 ,  C23C14/14 ,  C23C14/34 ,  C23C14/545 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/52 ,  C23C16/545 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/022 ,  H01J2237/081 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/3323 ,  Y10T428/265 ,  Y10T428/30

Abstract: Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.

Abstract translation: 介绍了通过化学气相沉积（CVD）在高纯度铜表面上生长石墨烯的技术。 表面可以通过使用诸如溅射，蒸发，电镀或CVD的沉积工艺在高纯度铜基底上沉积高纯度铜层来制备。 高纯度铜层的沉积之后可以进行热处理以促进晶粒生长。 与较低纯度的铜基底结合使用高纯度铜层可以提供热膨胀匹配，与铜蚀刻去除的相容性，或减少污染，产生较少的石墨烯缺陷，与直接沉积在较低纯度的基底上相比，费用低得多 使用高纯度铜箔衬底的沉积方法。