Plasma treatment system
    1.
    发明授权

    公开(公告)号:US07013834B2

    公开(公告)日:2006-03-21

    申请号:US10324436

    申请日:2002-12-20

    IPC分类号: C23C16/00 H01L21/00

    摘要: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

    Plasma Treatment System
    4.
    发明申请
    Plasma Treatment System 有权
    等离子体处理系统

    公开(公告)号:US20100140223A1

    公开(公告)日:2010-06-10

    申请号:US12703812

    申请日:2010-02-11

    IPC分类号: C23F1/00

    摘要: A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.

    摘要翻译: 一种用下游式等离子体处理工件的等离子体处理系统。 等离子体处理系统的处理室包括具有通常设置在供电电极和接地板之间的等离子体空腔的室盖,通过接地板与等离子体腔分离的处理空间以及用于保持的处理空间中的基板支撑 工件。 在等离子体腔中产生直接等离子体。 接地板适于具有从等离子体空腔中进入处理空间的等离子体中的电子和离子的开口,以提供自由基的下游型等离子体。 开口还可以消除等离子体腔和处理空间之间的光线的视线路径。 在另一方面,可以通过从室盖移除或插入至少一个可拆卸的侧壁部分来调节处理室的体积。