公开(公告)号：US20070069291A1

公开(公告)日：2007-03-29

申请号：US11520912

申请日：2006-09-14

申请人： Michael Stuber ,  Christopher Brindle ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener ,  Alexander Dribinsky ,  Tae Kim

发明人： Michael Stuber ,  Christopher Brindle ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener ,  Alexander Dribinsky ,  Tae Kim

IPC分类号： H01L27/12

CPC分类号： H01L29/78615 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

摘要： A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

摘要翻译： 公开了一种用于使用累积电荷控制（ACC）技术来改善绝缘体上半导体（SOI）金属氧化物 - 硅场效应晶体管（MOSFET）器件的栅极氧化物可靠性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个实施例中，电路包括以累积电荷状态运行的MOSFET，以及用于控制可操作地耦合到SOI MOSFET的累积电荷的装置。 首先确定不受控制的累积电荷对SOI MOSFET的栅极氧化物的时间依赖介电击穿（TDDB）的影响。 第二次确定SOI MOSFET的栅极氧化物的受控累积电荷对TDDB的影响。 SOI MOSFET适于具有响应于第一和第二确定的选择的平均时间分辨率，并且使用用于可操作地耦合到SOI MOSFET的累积电荷控制的技术来操作电路。 在一个实施例中，累积的电荷控制技术包括使用可操作地耦合到SOI MOSFET体的累积电荷宿。

公开(公告)号：US20070018247A1

公开(公告)日：2007-01-25

申请号：US11484370

申请日：2006-07-10

申请人： Christopher Brindle ,  Michael Stuber ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener

发明人： Christopher Brindle ,  Michael Stuber ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener

IPC分类号： H01L27/12

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

摘要翻译： 公开了一种用于改善使用累积电荷吸收（ACS）的MOSFET器件的线性特性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个示例性实施例中，具有至少一个SOI MOSFET的电路被配置为在累积电荷状态下操作。 当FET在累积电荷状态下工作时，可操作地耦合到SOI MOSFET的主体的累积电荷吸收器消除，去除或以其他方式控制累积电荷，从而降低寄生偏离态源极至漏极间电容的非线性 的SOI MOSFET。 在利用改进的SOI MOSFET器件实现的RF开关电路中，当SOI MOSFET在累积电荷状态下工作时，通过去除或以其他方式控制累积电荷来减小谐波和互调失真。