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公开(公告)号：US12283540B2
公开(公告)日：2025-04-22
申请号：US18295111
申请日：2023-04-03
Applicant: ROHM CO., LTD.
Inventor： Bin Zhang , Akinori Nii , Taro Nishioka
IPC: H01L23/498 , H01L21/48 , H01L23/31
Abstract: There is provided a semiconductor device including: a lead frame including a first opening portion; a resin filled in the first opening portion; and a semiconductor element electrically connected to the lead frame, wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame.
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公开(公告)号：US12278482B2
公开(公告)日：2025-04-15
申请号：US18462748
申请日：2023-09-07
Applicant: ROHM CO., LTD.
Inventor： Toshiyuki Ishikawa
Abstract: An isolated gate driver has: a register that stores the adjustment data read from a non-volatile memory; a gate driving circuit that drives the gate of a switching element with a characteristic set based on a value stored in the register; a fault detector that performs fault detection for other than the non-volatile memory; an error detection-correction circuit that performs error detection and error correction on the adjustment data written to the non-volatile memory; a first external terminal for output of the result of fault detection; a second external terminal for output of the result of error detection; and a fault controller that, if a one-bit error is detected in the adjustment data, brings the second external terminal into an error-indicating output state and continues with normal operation of the gate driving circuit and, if a two-or-more-bit error is detected in the adjustment data, forcibly stops the gate driving circuit.
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公开(公告)号：US20250120170A1
公开(公告)日：2025-04-10
申请号：US18982590
申请日：2024-12-16
Applicant: ROHM CO., LTD.
Inventor： Hirotaka OTAKE
Abstract: The present invention provides a nitride semiconductor device, including: a silicon substrate; a first lateral transistor over a first region of the silicon substrate and including: a first nitride semiconductor layer formed over the silicon substrate; and a first gate electrode, a first source electrode and a first drain electrode formed over the first nitride semiconductor layer; a second lateral transistor over a second region of the silicon substrate and including: a second nitride semiconductor layer formed over the silicon substrate; and a second gate electrode, a second source electrode and a second drain electrode formed over the second nitride semiconductor layer; a first separation trench formed over a third region; a source/substrate connecting via hole formed over the third region; and an interlayer insulating layer formed in the first separation trench.
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公开(公告)号：US20250107305A1
公开(公告)日：2025-03-27
申请号：US18971729
申请日：2024-12-06
Applicant: ROHM CO., LTD.
Inventor： Masahiko KOBAYAKAWA
Abstract: A semiconductor device includes a lead frame, a semiconductor element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.
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公开(公告)号：US20250105834A1
公开(公告)日：2025-03-27
申请号：US18885982
申请日：2024-09-16
Applicant: ROHM CO., LTD.
Inventor： Makoto SADA , Katsuaki YAMADA , Shuntaro TAKAHASHI , Toru TAKUMA , Naoki TAKAHASHI
IPC: H03K17/082
Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a semiconductor substrate; a well, formed in the semiconductor substrate; an output terminal, electrically connected to the semiconductor substrate; a ground terminal, configured to receive a ground voltage; a detection signal generating circuit, configured to generate a negative current detection signal when an output voltage present at the output terminal is detected to be less than the ground voltage; and a control circuit, configured to apply the ground voltage or the output voltage to the well in response to the negative current detection signal. The detection signal generating circuit includes: a comparator, configured to generate the negative current detection signal by comparing an output detection voltage with the ground voltage or the threshold voltage; a bias circuit, configured to switch between applying the output voltage or a bias voltage as the output detection voltage; and a clamp circuit.
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Patent Agency Ranking
公开(公告)号：US20250105741A1
公开(公告)日：2025-03-27
申请号：US18895973
申请日：2024-09-25
Applicant: ROHM CO., LTD.
Inventor： Takuo TAKAHASHI , Tadashi AKAHO
Abstract: A semiconductor integrated circuit device configured to be used as a part of a power supply device includes: an error amplifier configured to output an error voltage according to a difference between a feedback voltage, which is based on an output voltage of the power supply device, and a reference voltage; a first switching element and a second switching element that are connected in series; a first controller configured to control switching of the first switching element and the second switching element based on the error voltage; an output transistor; a second controller configured to linearly control the output transistor based on the error voltage; and a first terminal configured so that a connection node between the first switching element and the second switching element and an output terminal of the output transistor are connected to the first terminal.
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公开(公告)号：US12260920B2
公开(公告)日：2025-03-25
申请号：US18355642
申请日：2023-07-20
Applicant: ROHM Co., LTD.
Inventor： Nozomu Koja
Abstract: Provided is a semiconductor apparatus including a power supply pin configured to receive a power supply voltage from an outside, a capacitor connection pin to be connected with a capacitor, a power supply circuit having an input connected to the power supply pin and having an output connected to the capacitor connection pin, the power supply circuit being configured to generate an internal power supply voltage at the output of the power supply circuit, a nonvolatile memory configured to operate by receiving the internal power supply voltage, a switch disposed between a power supply terminal of the nonvolatile memory and the capacitor connection pin, and, a control unit configured to turn on the switch when the internal power supply voltage exceeds a predetermined threshold value.
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公开(公告)号：USD1067205S1
公开(公告)日：2025-03-18
申请号：US29874347
申请日：2023-04-18
Applicant: ROHM CO., LTD.
Designer： Kenya Hashimoto
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公开(公告)号：US12255191B2
公开(公告)日：2025-03-18
申请号：US17626070
申请日：2020-09-07
Applicant: ROHM CO., LTD.
Inventor： Hideki Sawada
Abstract: Provided is a semiconductor device comprising: a semiconductor element; a supporting board supporting the semiconductor element; a wiring unit electrically connected to the semiconductor element; and a resin member sealing the semiconductor element. The resin member is provided with a first driving-side opening part, a second driving-side opening part, a first control-side opening part, and a second control-side opening part, in which a part of the wiring unit is exposed and on which electronic parts electrically connected to the wiring unit can be mounted.
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公开(公告)号：US20250086137A1
公开(公告)日：2025-03-13
申请号：US18960887
申请日：2024-11-26
Applicant: ROHM CO., LTD.
Inventor： Nobutaka ITAKURA
Abstract: A pull-up circuit contains a variable current source structured to supply current to a CC pin of a connector. A voltage detection circuit is structured to measure voltage at a CC1 pin and at a CC2 pin. A processor is structured to control the variable current source, and to detect moisture adhered to the CC1 pin and the CC2 pin, with reference to an output of the voltage detection circuit.
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