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公开(公告)号:US20080249650A1
公开(公告)日:2008-10-09
申请号:US11696507
申请日:2007-04-04
申请人: Russell D. Allen , Stephen L. Brown , Alessandro C. Callegari , Michael P. Chudzik , Vijay Narayanan , Vamsi K. Paruchuri
发明人: Russell D. Allen , Stephen L. Brown , Alessandro C. Callegari , Michael P. Chudzik , Vijay Narayanan , Vamsi K. Paruchuri
CPC分类号: G01N21/8422 , G01N21/59 , H01L22/12 , H01L22/20
摘要: Measurement of the extinction coefficient k is employed for effective and prompt in-line monitoring and/or controlling of the metal film composition. The dependency of the extinction coefficient on the composition of a metal compound is characterized by measuring the extinction coefficients of a series of the metal compound with different compositions. A monitor metal film is then deposited on a wafer. The extinction coefficient k of the film on the wafer is measured and a film compositional parameter is extracted. The wafer processing may continue if k is in specification or the needed compositional change in the film may be extracted from the measured value of the k and the established dependence of k on the composition of the film for out-of-spec k values.
摘要翻译: 使用消光系数k的测量来有效且迅速地在线监测和/或控制金属膜组合物。 消光系数对金属化合物的组成的依赖性的特征在于测量一系列具有不同组成的金属化合物的消光系数。 然后将监测金属膜沉积在晶片上。 测量晶片上的膜的消光系数k并提取膜组成参数。 如果k在规范中,则可以继续进行晶片处理,或者可以从k的测量值中提取所需的胶片组成变化,并且建立k的关于对于超出规格k值的胶片的组成的依赖性。
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公开(公告)号:US06984529B2
公开(公告)日:2006-01-10
申请号:US10659136
申请日:2003-09-10
申请人: George Stojakovic , Rajiv M. Ranade , Ihar Kasko , Joachim Neutzel , Keith R. Milkove , Russell D. Allen , Kim Poong Mee Lee, legal representative
IPC分类号: H01L21/027
CPC分类号: G11C11/22 , H01L27/222 , H01L43/12
摘要: A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.
摘要翻译: 提供了一种制造磁性隧道结(MTJ)装置的方法。 图案化的硬掩模被氧化以在其上形成表面氧化物。 在图案化的硬掩模的氧化之后,将MTJ堆叠与图案化的硬掩模对准地蚀刻。 优选地,MTJ堆叠蚀刻配方包括氯和氧。 硬掩模和MTJ叠层之间的蚀刻选择性得到改善。
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公开(公告)号:US07772016B2
公开(公告)日:2010-08-10
申请号:US11696507
申请日:2007-04-04
申请人: Russell D. Allen , Stephen L. Brown , Alessandro C. Callegari , Michael P. Chudzik , Vijay Narayanan , Vamsi K. Paruchuri
发明人: Russell D. Allen , Stephen L. Brown , Alessandro C. Callegari , Michael P. Chudzik , Vijay Narayanan , Vamsi K. Paruchuri
IPC分类号: H01L21/66
CPC分类号: G01N21/8422 , G01N21/59 , H01L22/12 , H01L22/20
摘要: Measurement of the extinction coefficient k is employed for effective and prompt in-line monitoring and/or controlling of the metal film composition. The dependency of the extinction coefficient on the composition of a metal compound is characterized by measuring the extinction coefficients of a series of the metal compound with different compositions. A monitor metal film is then deposited on a wafer. The extinction coefficient k of the film on the wafer is measured and a film compositional parameter is extracted. The wafer processing may continue if k is in specification or the needed compositional change in the film may be extracted from the measured value of the k and the established dependence of k on the composition of the film for out-of-spec k values.
摘要翻译: 使用消光系数k的测量来有效且迅速地在线监测和/或控制金属膜组合物。 消光系数对金属化合物的组成的依赖性的特征在于测量一系列具有不同组成的金属化合物的消光系数。 然后将监测金属膜沉积在晶片上。 测量晶片上的膜的消光系数k并提取膜组成参数。 如果k在规范中,则可以继续进行晶片处理,或者可以从k的测量值中提取胶片中所需的组成变化,并且建立k对于超出规格k值的胶片组成的建立依赖性。
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公开(公告)号:US6107199A
公开(公告)日:2000-08-22
申请号:US178342
申请日:1998-10-24
IPC分类号: C23C14/58 , C23C14/14 , C23C14/18 , C23C16/00 , C23C16/06 , C23C16/16 , C23C16/56 , H01L21/44
CPC分类号: C23C14/5806 , C23C14/185 , C23C16/06 , C23C16/56
摘要: A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.
摘要翻译: 通过将衬底放置在CVD反应器中来实现难熔金属材料膜的光滑表面的制造方法; 通过同时引入到前体气体和分子氧的CVD反应器中,在约1×10 -6至1×10 -4之间的压力下引发沉积两相材料层; 并在沉积温度下退火处理层。
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