公开(公告)号：US20070176249A1

公开(公告)日：2007-08-02

申请号：US10599396

申请日：2005-12-12

Applicant: Ryosuke Meshii ,  Kouji Sakai ,  Atsushi Ishigami ,  Eichi Furukubo

Inventor： Ryosuke Meshii ,  Kouji Sakai ,  Atsushi Ishigami ,  Eichi Furukubo

IPC: H01L29/84 ,  H01L21/00

CPC classification number: G01L9/0042 ,  G01L1/14

Abstract: In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.

Abstract translation: 在静电电容型的半导体物理量传感器中，与玻璃基板和硅基板的相互面对的周边区域（接合区域）接触进行阳极接合，同时两基板之间具有阳极接合电压， 被整合。 在硅衬底的接合面侧表面上形成固定电极，而在半导体衬底的接合面侧表面形成可动电极。 在阳极接合之前的接合区域内的玻璃基板的接合面侧面上形成有将固定电极短路到可动电极的等电位线作为阳极接合放电的对策。 阳极接合后，等电位线被切断并移除。 通过以这种方式制造传感器，当绝缘基板被阳极结合到半导体基板上时，使绝缘基板的固定电极与半导体基板的可动电极等电位，从而防止发生放电。 因此，可以获得高的接合强度和期望的传感器特性，而不会发生接合空隙和传感器芯片的尺寸增大。

公开(公告)号：US20080150659A1

公开(公告)日：2008-06-26

申请号：US11883174

申请日：2006-08-29

Applicant: Koji Yokoyama ,  Riichi Uotome ,  Eiichi Furukubo ,  Katsumi Kakimoto ,  Ryosuke Meshii ,  Hideki Ueda ,  Masakazu Kobayashi

Inventor： Koji Yokoyama ,  Riichi Uotome ,  Eiichi Furukubo ,  Katsumi Kakimoto ,  Ryosuke Meshii ,  Hideki Ueda ,  Masakazu Kobayashi

IPC: H01H29/00

CPC classification number: H01H29/00 ,  H01H29/004 ,  H01H2029/008 ,  H01H2057/006

Abstract: A relay device using a conductive fluid and having excellent switching response is provided. This relay device mainly comprises a laminate having an interior space, and formed by bonding a semiconductor substrate to an insulating substrate, at least two contacts exposed to the interior space, a diaphragm portion facing the interior space, a conductive fluid sealed in the interior space, and an actuator for elastically deforming the diaphragm portion. By forming the diaphragm portion on the semiconductor substrate, it is possible to reduce a driving force of the actuator needed to elastically deform the diaphragm portion, and obtain a volume change of the interior space with good response. This volume change causes a positional displacement of the conductive fluid in the interior space, thereby forming a conductive state or a non-conductive sate between the contacts.

Abstract translation: 提供了使用导电流体并具有优异的开关响应的继电器装置。 该中继装置主要包括具有内部空间并通过将半导体衬底粘合到绝缘衬底，暴露于内部空间的至少两个触点，面向内部空间的隔膜部分，密封在内部空间中的导电流体 以及用于使隔膜部分弹性变形的致动器。 通过在半导体衬底上形成隔膜部分，可以减小弹性变形隔膜部分所需的致动器的驱动力，并且以良好的响应获得内部空间的体积变化。 该体积变化导致导电流体在内部空间中的位置偏移，从而在触点之间形成导电状态或非导电状态。

公开(公告)号：US07464591B2

公开(公告)日：2008-12-16

申请号：US11579178

申请日：2006-01-20

Applicant: Yoshihisa Fukuda ,  Kouji Sakai ,  Atsushi Ishigami ,  Eiichi Furukubo ,  Ryosuke Meshii ,  Takashi Yajima

Inventor： Yoshihisa Fukuda ,  Kouji Sakai ,  Atsushi Ishigami ,  Eiichi Furukubo ,  Ryosuke Meshii ,  Takashi Yajima

IPC: G01P15/02 ,  G01P15/00

CPC classification number: G01P15/08 ,  G01P2015/0871

Abstract: A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.

Abstract translation: 一种半导体加速度传感器，其具有形成为大致L形以包围重量部分的梁部分，其中形成为包围正方形部分，如在平面图中看到并构成重量部分的两个细长L形梁部分，在靠近的位置 其基端部形成有从固定部朝向配重部突出的突出部，并且容纳从重物部朝向固定部突出以包围突出部的凹部。 突出部具有与容纳凹部的内壁面大致相同的外形，使得重量部在与上下方向垂直的水平方向上的任何方向上的移动受到限制 突出部分由接收凹部。 因此，即使当对加速度传感器施加侧面冲击时，防止重量部分显着移动，从而防止过大的应力施加到梁部分以破坏梁部分。

公开(公告)号：US20080022770A1

公开(公告)日：2008-01-31

申请号：US11579178

申请日：2006-01-20

Applicant: Yoshihisa Fukuda ,  Kouji Sakai ,  Atsushi Ishigami ,  Eiichi Furukubo ,  Ryosuke Meshii ,  Takashi Yajima

Inventor： Yoshihisa Fukuda ,  Kouji Sakai ,  Atsushi Ishigami ,  Eiichi Furukubo ,  Ryosuke Meshii ,  Takashi Yajima

IPC: G01P15/02

CPC classification number: G01P15/08 ,  G01P2015/0871

Abstract: A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.

Abstract translation: 一种半导体加速度传感器，其具有形成为大致L形以包围重量部分的梁部分，其中形成为包围正方形部分，如在平面图中看到并构成重量部分的两个细长L形梁部分，在靠近的位置 其基端部形成有从固定部朝向配重部突出的突出部，并且容纳从重物部朝向固定部突出以包围突出部的凹部。 突出部具有与容纳凹部的内壁面大致相同的外形，使得重量部在与上下方向垂直的水平方向上的任何方向上的移动受到限制 突出部分由接收凹部。 因此，即使当对加速度传感器施加侧面冲击时，防止重量部分显着移动，从而防止过大的应力施加到梁部分以破坏梁部分。

公开(公告)号：US07799595B2

公开(公告)日：2010-09-21

申请号：US10599396

申请日：2005-12-12

Applicant: Ryosuke Meshii ,  Kouji Sakai ,  Atsushi Ishigami ,  Eiichi Furukubo

Inventor： Ryosuke Meshii ,  Kouji Sakai ,  Atsushi Ishigami ,  Eiichi Furukubo

IPC: H01L21/00 ,  H01L21/76

CPC classification number: G01L9/0042 ,  G01L1/14

Abstract: In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.

Abstract translation: 在静电电容型的半导体物理量传感器中，与玻璃基板和硅基板的相互面对的周边区域（接合区域）接触进行阳极接合，同时两基板之间具有阳极接合电压， 被整合。 在硅衬底的接合面侧表面上形成固定电极，而在半导体衬底的接合面侧表面形成可动电极。 在阳极接合之前的接合区域内的玻璃基板的接合面侧面上形成有将固定电极短路到可动电极的等电位线作为阳极接合放电的对策。 阳极接合后，等电位线被切断并移除。 通过以这种方式制造传感器，当绝缘基板被阳极结合到半导体基板上时，使绝缘基板的固定电极与半导体基板的可动电极等电位，从而防止发生放电。 因此，可以获得高的接合强度和期望的传感器特性，而不会发生接合空隙和传感器芯片的尺寸增大。

公开(公告)号：US07243561B2

公开(公告)日：2007-07-17

申请号：US10531074

申请日：2004-08-26

Applicant: Atsushi Ishigami ,  Kouji Sakai ,  Ryosuke Meshii

Inventor： Atsushi Ishigami ,  Kouji Sakai ,  Ryosuke Meshii

IPC: G01D21/02 ,  G01D11/24 ,  G01P1/02 ,  G01L19/14

CPC classification number: B60C23/0408 ,  G01L19/0084 ,  G01L19/0092 ,  G01L19/141 ,  G01L19/148 ,  G01P1/023 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.

Abstract translation: 传感器单元包括压力传感器，加速度传感器和信号处理电路，它们设置在引线的底表面上，以在传感器单元的纵向上形成一条线。 压力传感器和加速度传感器相对于传感器单元的纵向方向上的信号处理电路的中心设置在相应的对称位置。 压力传感器和加速度传感器中的每一个具有基本相同的高度尺寸。 传感器，信号处理电路和引线用成型体密封，使得引线的引线端子突出到模制体的外部。 信号处理电路基于来自加速度传感器的信号来操作以控制压力传感器的ON / OFF动作。

公开(公告)号：US20060053908A1

公开(公告)日：2006-03-16

申请号：US10531074

申请日：2004-08-26

Applicant: Atsushi Ishigami ,  Kouji Sakai ,  Ryosuke Meshii

Inventor： Atsushi Ishigami ,  Kouji Sakai ,  Ryosuke Meshii

IPC: G01D21/02 ,  G01L19/14 ,  G01D11/24 ,  G01P1/02

CPC classification number: B60C23/0408 ,  G01L19/0084 ,  G01L19/0092 ,  G01L19/141 ,  G01L19/148 ,  G01P1/023 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.

Abstract translation: 传感器单元包括压力传感器，加速度传感器和信号处理电路，它们设置在引线的底表面上，以在传感器单元的纵向上形成一条线。 压力传感器和加速度传感器相对于传感器单元的纵向方向上的信号处理电路的中心设置在相应的对称位置。 压力传感器和加速度传感器中的每一个具有基本相同的高度尺寸。 传感器，信号处理电路和引线用成型体密封，使得引线的引线端子突出到模制体的外部。 信号处理电路基于来自加速度传感器的信号来操作以控制压力传感器的ON / OFF动作。