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    Silicon carbide semiconductor device
    1.
    发明授权
    Silicon carbide semiconductor device 有权

    公开(公告)号：US11869943B2

    公开(公告)日：2024-01-09

    申请号：US17118964

    申请日：2020-12-11

    申请人： Shanghai Hestia Power Inc.

    发明人： Chien-Chung Hung ,  Kuo-Ting Chu ,  Chwan-Yin Li

    IPC分类号： H01L29/16 ,  H01L29/872 ,  H01L29/06

    CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/872 ,  H01L29/8725

    摘要： A silicon carbide semiconductor device, in particular a monolithically integrated trench Metal-Oxide-Semiconductor Field-Effect Transistor with segmentally surrounded trench Schottky diode, includes a semiconductor substrate, a trench Metal-Oxide-Semiconductor Field-Effect Transistor and a trench Schottky diode. The trench Schottky diode has a perpendicularly disposed trench extending in a first horizontal direction, a metal electrode filled into the trench, and a plurality of doped regions disposed segmentally and extending in a second horizontal direction around the trench. The first horizontal direction is substantially orthogonal to the second horizontal direction, a side wall and a bottom wall of the metal electrode in the trench forms a Schottky junction, and the current flowing from the metal electrode is restricted between adjacent doped regions.

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    4.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220190117A1

    公开(公告)日：2022-06-16

    申请号：US17118964

    申请日：2020-12-11

    申请人： Shanghai Hestia Power Inc.

    发明人： Chien-Chung HUNG ,  Kuo-Ting CHU ,  Chwan-Yin LI

    IPC分类号： H01L29/16 ,  H01L29/06 ,  H01L29/872

    摘要： The invention provides a silicon carbide semiconductor device, in particular to a monolithically integrated trench Metal-Oxide-Semiconductor Field-Effect Transistor with segmentally surrounded trench Schottky diode, which comprises a semiconductor substrate, a trench Metal-Oxide-Semiconductor Field-Effect Transistor and a trench Schottky diode. The trench Schottky diode has a perpendicularly disposed trench extending in a first horizontal direction, a metal electrode filled into the trench, and a plurality of doped regions disposed segmentally and extending in a second horizontal direction around the trench. The first horizontal direction is substantially orthogonal to the second horizontal direction, a side wall and a bottom wall of the metal electrode in the trench forms a Schottky junction, and the current flowing from the metal electrode is restricted between adjacent doped regions.

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    7.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220223730A1

    公开(公告)日：2022-07-14

    申请号：US17145969

    申请日：2021-01-11

    申请人： Shanghai Hestia Power Inc.

    发明人： Chien-Chung HUNG ,  Kuo-Ting CHU ,  Lurng-Shehng LEE ,  Chwan-Yin LI

    IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L21/04 ,  H01L21/765 ,  H01L29/66

    摘要： A trench silicon carbide metal-oxide semiconductor field effect transistor includes a silicon carbide semiconductor substrate and a trench metal-oxide semiconductor field effect transistor, the field effect transistor includes a trench vertically arranged and penetrating along a first horizontal direction, a gate insulating layer formed on an inner wall of the trench, a first poly gate formed on the gate insulating layer, a shield region formed outsides and below the trench, and a field plate arranged between a bottom wall of the trench and the shield region, and the field plate has semiconductor doping and is laterally in contact to a current spreading layer to deplete electrons of the current spreading layer when a reverse bias voltage is applied.