公开(公告)号：US11869943B2

公开(公告)日：2024-01-09

申请号：US17118964

申请日：2020-12-11

申请人： Shanghai Hestia Power Inc.

发明人： Chien-Chung Hung ,  Kuo-Ting Chu ,  Chwan-Yin Li

IPC分类号： H01L29/16 ,  H01L29/872 ,  H01L29/06

CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/872 ,  H01L29/8725

摘要： A silicon carbide semiconductor device, in particular a monolithically integrated trench Metal-Oxide-Semiconductor Field-Effect Transistor with segmentally surrounded trench Schottky diode, includes a semiconductor substrate, a trench Metal-Oxide-Semiconductor Field-Effect Transistor and a trench Schottky diode. The trench Schottky diode has a perpendicularly disposed trench extending in a first horizontal direction, a metal electrode filled into the trench, and a plurality of doped regions disposed segmentally and extending in a second horizontal direction around the trench. The first horizontal direction is substantially orthogonal to the second horizontal direction, a side wall and a bottom wall of the metal electrode in the trench forms a Schottky junction, and the current flowing from the metal electrode is restricted between adjacent doped regions.

公开(公告)号：US11984499B2

公开(公告)日：2024-05-14

申请号：US17145969

申请日：2021-01-11

申请人： Shanghai Hestia Power Inc.

发明人： Chien-Chung Hung ,  Kuo-Ting Chu ,  Lurng-Shehng Lee ,  Chwan-Yin Li

IPC分类号： H01L29/78 ,  H01L21/04 ,  H01L21/765 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L21/046 ,  H01L21/765 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/407 ,  H01L29/66068

摘要： A trench silicon carbide metal-oxide semiconductor field effect transistor includes a silicon carbide semiconductor substrate and a trench metal-oxide semiconductor field effect transistor, the field effect transistor includes a trench vertically arranged and penetrating along a first horizontal direction, a gate insulating layer formed on an inner wall of the trench, a first poly gate formed on the gate insulating layer, a shield region formed outsides and below the trench, and a field plate arranged between a bottom wall of the trench and the shield region, and the field plate has semiconductor doping and is laterally in contact to a current spreading layer to deplete electrons of the current spreading layer when a reverse bias voltage is applied.

公开(公告)号：US11184003B2

公开(公告)日：2021-11-23

申请号：US17011664

申请日：2020-09-03

申请人： Shanghai Hestia Power Inc.

发明人： Fu-Jen Hsu ,  Chien-Chung Hung ,  Kuo-Ting Chu ,  Chwan-Ying Lee

IPC分类号： H03K17/16 ,  H01L29/16

摘要： A silicon carbide power device is controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.

公开(公告)号：US11108388B1

公开(公告)日：2021-08-31

申请号：US16806265

申请日：2020-03-02

申请人： SHANGHAI HESTIA POWER, INC.

发明人： Fu-Jen Hsu ,  Chien-Chung Hung ,  Kuo-Ting Chu ,  Chwan-Ying Lee

IPC分类号： H03K17/16 ,  H01L29/16

摘要： A silicon carbide power device controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.