公开(公告)号：US20120039401A1

公开(公告)日：2012-02-16

申请号：US13185391

申请日：2011-07-18

申请人： Sandeep D'Souza ,  Bipul Agarwal

发明人： Sandeep D'Souza ,  Bipul Agarwal

IPC分类号： H04L27/00

CPC分类号： H04B1/0475 ,  H03F3/24 ,  H03H11/1291 ,  H03H2011/0494 ,  H04B1/3833 ,  H04B2001/0408 ,  H04W52/0261 ,  Y02D70/00 ,  Y02D70/1222 ,  Y02D70/40

摘要： A programmable-current transmit continuous-time filter (TX-CTF) system can be included in a radio frequency (RF) transmitter. The input of the TX-CTF can receive a baseband transmission signal, and the output of the TX-CTF can be provided to an upconversion mixer for conversion to RF for transmission. The TX-CTF includes amplifier circuitry and passive circuitry that together define the filter parameters. The TX-CTF further includes programmable current circuitry that provides a programmable bias current to the amplifier circuitry. The TX-CTF system also includes control logic that receives one or more transmitter control signals and, in response, generates signals that control the bias current provided to the TX-CTF.

摘要翻译： 可编程电流传输连续时间滤波器（TX-CTF）系统可以包括在射频（RF）发射机中。 TX-CTF的输入可以接收基带传输信号，TX-CTF的输出可以提供给上变频混频器，以转换为RF进行传输。 TX-CTF包括一起定义滤波器参数的放大器电路和无源电路。 TX-CTF还包括可编程电流电路，为放大器电路提供可编程偏置电流。 TX-CTF系统还包括接收一个或多个发射机控制信号的控制逻辑，并且作为响应，产生控制提供给TX-CTF的偏置电流的信号。

公开(公告)号：US06653679B2

公开(公告)日：2003-11-25

申请号：US10015411

申请日：2001-12-11

申请人： Sandeep D'Souza ,  Li-Ming Hwang ,  Aniruddha Joshi ,  Suryanarayana Shivakumar Bhattacharya

发明人： Sandeep D'Souza ,  Li-Ming Hwang ,  Aniruddha Joshi ,  Suryanarayana Shivakumar Bhattacharya

IPC分类号： H01L2976

CPC分类号： H01L21/28202 ,  H01L21/26506 ,  H01L21/2822 ,  H01L21/28238 ,  H01L21/823857 ,  H01L29/518

摘要： An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or “flicker noise”, while maintaining the control of boron penetration into the substrate of the MOSFET device. The gate structure for the MOSFET device includes a gate electrode and a gate oxide layer wherein nitrogen is selectively implanted into the gate oxide/device substrate interface prior to oxidation of the gate oxide layer. The nitrogen is selectively implanted so that the nitrogen is implanted into thin gate oxide regions and masked from thick gate oxide regions so that the benefits of controlling the boron penetration are realized while the 1/f noise is reduced due to the selective implantation of the nitrogen.

公开(公告)号：US08682263B2

公开(公告)日：2014-03-25

申请号：US13185391

申请日：2011-07-18

申请人： Sandeep D'Souza ,  Bipul Agarwal

发明人： Sandeep D'Souza ,  Bipul Agarwal

IPC分类号： H04B1/02

CPC分类号： H04B1/0475 ,  H03F3/24 ,  H03H11/1291 ,  H03H2011/0494 ,  H04B1/3833 ,  H04B2001/0408 ,  H04W52/0261 ,  Y02D70/00 ,  Y02D70/1222 ,  Y02D70/40

摘要： A programmable-current transmit continuous-time filter (TX-CTF) system can be included in a radio frequency (RF) transmitter. The input of the TX-CTF can receive a baseband transmission signal, and the output of the TX-CTF can be provided to an upconversion mixer for conversion to RF for transmission. The TX-CTF includes amplifier circuitry and passive circuitry that together define the filter parameters. The TX-CTF further includes programmable current circuitry that provides a programmable bias current to the amplifier circuitry. The TX-CTF system also includes control logic that receives one or more transmitter control signals and, in response, generates signals that control the bias current provided to the TX-CTF.

摘要翻译： 可编程电流传输连续时间滤波器（TX-CTF）系统可以包括在射频（RF）发射机中。 TX-CTF的输入可以接收基带传输信号，TX-CTF的输出可以提供给上变频混频器，以转换为RF进行传输。 TX-CTF包括一起定义滤波器参数的放大器电路和无源电路。 TX-CTF还包括可编程电流电路，为放大器电路提供可编程偏置电流。 TX-CTF系统还包括接收一个或多个发射机控制信号的控制逻辑，并且作为响应，产生控制提供给TX-CTF的偏置电流的信号。

公开(公告)号：US06514825B1

公开(公告)日：2003-02-04

申请号：US09606778

申请日：2000-06-28

申请人： Sandeep D'Souza ,  Li-Ming Hwang ,  Aniruddha Joshi ,  Suryanarayana Shivakumar Bhattacharya

发明人： Sandeep D'Souza ,  Li-Ming Hwang ,  Aniruddha Joshi ,  Suryanarayana Shivakumar Bhattacharya

IPC分类号： H01L21336

CPC分类号： H01L21/28202 ,  H01L21/26506 ,  H01L21/2822 ,  H01L21/28238 ,  H01L21/823857 ,  H01L29/518

摘要： An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or “flicker noise”, while maintaining the control of boron penetration into the substrate of the MOSFET device. The gate structure for the MOSFET device includes a gate electrode and a gate oxide layer wherein nitrogen is selectively implanted into the gate oxide/device substrate interface prior to oxidation of the gate oxide layer. The nitrogen is selectively implanted so that the nitrogen is implanted into thin gate oxide regions and masked from thick gate oxide regions so that the benefits of controlling the boron penetration are realized while the 1/f noise is reduced due to the selective implantation of the nitrogen.

摘要翻译： 用于MOSFET器件的改进的栅极结构表现出降低的1 / f噪声或“闪烁噪声”的水平，同时保持硼渗透到MOSFET器件的衬底中的控制。 用于MOSFET器件的栅极结构包括栅极电极和栅极氧化物层，其中在栅极氧化物层氧化之前氮被选择性地注入到栅极氧化物/器件衬底界面中。 选择性地注入氮气，使得氮被注入到薄的栅极氧化物区域并从厚的栅极氧化物区域掩蔽，从而在1 / f噪声由于氮的选择性注入而降低时实现控制硼渗透的益处 。