摘要:
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.
摘要:
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.
摘要:
A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.
摘要:
Provided are a heat generation sheet and a method of fabricating the same. The heat generation sheet includes: a base comprising first and second sides; a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles are physically necked; a protective layer protecting the heat generation layer; and an electric feeding part supplying power to the heat generation layer. The heat generation layer is formed by coating and heat treating a nanoparticle dispersion solution.
摘要:
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.
摘要:
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.
摘要:
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.
摘要:
The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.
摘要:
Provided are a heat generation sheet and a method of fabricating the same. The heat generation sheet includes: a base comprising first and second sides; a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles are physically necked; a protective layer protecting the heat generation layer; and an electric feeding part supplying power to the heat generation layer. The heat generation layer is formed by coating and heat treating a nanoparticle dispersion solution.
摘要:
The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited on the substrates to facilitate formation of nanoparticle films. Sintered nanoparticles are used as an active layer and dielectric materials of high dielectric coefficient are also used as a gate dielectric layer to form a top gate electrode on the gate dielectric layer, thereby enabling low-voltage operation and low-temperature fabrication.