公开(公告)号：US08263905B2

公开(公告)日：2012-09-11

申请号：US12368337

申请日：2009-02-10

申请人： Sangsig Kim ,  Kyoungah Cho ,  Kiju Im

发明人： Sangsig Kim ,  Kyoungah Cho ,  Kiju Im

IPC分类号： H05B1/00 ,  H05B3/12

CPC分类号： B41J2/14129 ,  B41J2202/03

摘要： Provided are a heat generation sheet and a method of fabricating the same. The heat generation sheet includes: a base comprising first and second sides; a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles are physically necked; a protective layer protecting the heat generation layer; and an electric feeding part supplying power to the heat generation layer. The heat generation layer is formed by coating and heat treating a nanoparticle dispersion solution.

摘要翻译： 提供一种发热片及其制造方法。 发热片包括：基部，包括第一和第二侧; 形成在基体的第一侧的至少一个区域中并且多个导电纳米颗粒物理上颈缩的发热层; 保护发热层的保护层; 以及向发热层供电的供电部。 发热层通过涂覆和热处理纳米颗粒分散液而形成。

公开(公告)号：US20090262175A1

公开(公告)日：2009-10-22

申请号：US12368337

申请日：2009-02-10

申请人： Sangsig Kim ,  Kyoungah Cho ,  Kiju Im

发明人： Sangsig Kim ,  Kyoungah Cho ,  Kiju Im

IPC分类号： B41J2/34 ,  H01L21/16

CPC分类号： B41J2/14129 ,  B41J2202/03

摘要： Provided are a heat generation sheet and a method of fabricating the same. The heat generation sheet includes: a base comprising first and second sides; a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles are physically necked; a protective layer protecting the heat generation layer; and an electric feeding part supplying power to the heat generation layer. The heat generation layer is formed by coating and heat treating a nanoparticle dispersion solution.

摘要翻译： 提供一种发热片及其制造方法。 发热片包括：基部，包括第一和第二侧; 形成在基体的第一侧的至少一个区域中并且多个导电纳米颗粒物理上颈缩的发热层; 保护发热层的保护层; 以及向发热层供电的供电部。 发热层通过涂覆和热处理纳米颗粒分散液而形成。

公开(公告)号：US07906361B2

公开(公告)日：2011-03-15

申请号：US12404693

申请日：2009-03-16

申请人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Joo Jang

发明人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Joo Jang

IPC分类号： H01L31/0384

CPC分类号： H01L31/0352 ,  B82Y15/00 ,  B82Y30/00 ,  H01L31/09 ,  Y10S977/773

摘要： The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

摘要翻译： 本发明涉及一种使用纳米颗粒的光电检测器，更具体地说，涉及一种新颖的光电检测器，其中通过湿胶体方法合成的纳米颗粒的表面被有机材料覆盖，然后有机材料然后用作电子迁移的通道或纳米颗粒，有机材料从其上被覆盖 去除纳米颗粒的表面以形成紧密堆积的颗粒结构，直接用于输送电子。 根据本发明的具体实施例，可以提高光电检测器的性能并简化其制造工艺。

公开(公告)号：US08313972B2

公开(公告)日：2012-11-20

申请号：US13028765

申请日：2011-02-16

申请人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Joo Jang

发明人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Joo Jang

IPC分类号： H01L31/0384

CPC分类号： H01L31/0352 ,  B82Y15/00 ,  B82Y30/00 ,  H01L31/09 ,  Y10S977/773

摘要： The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

摘要翻译： 本发明涉及一种使用纳米颗粒的光电检测器，更具体地说，涉及一种新颖的光电检测器，其中通过湿胶体方法合成的纳米颗粒的表面被有机材料覆盖，然后有机材料然后用作电子迁移的通道或纳米颗粒，有机材料从其上被覆盖 去除纳米颗粒的表面以形成紧密堆积的颗粒结构，直接用于输送电子。 根据本发明的具体实施例，可以提高光电检测器的性能并简化其制造工艺。

公开(公告)号：US20070120123A1

公开(公告)日：2007-05-31

申请号：US11699483

申请日：2007-01-30

申请人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Jang

发明人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Jang

IPC分类号： H01L29/08

CPC分类号： H01L31/0352 ,  B82Y15/00 ,  B82Y30/00 ,  H01L31/09 ,  Y10S977/773

摘要： The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

摘要翻译： 本发明涉及一种使用纳米颗粒的光电检测器，更具体地说，涉及一种新颖的光电检测器，其中通过湿胶体方法合成的纳米颗粒的表面被有机材料覆盖，然后有机材料然后用作电子迁移的通道或纳米颗粒，有机材料从其上被覆盖 去除纳米颗粒的表面以形成紧密堆积的颗粒结构，直接用于输送电子。 根据本发明的具体实施例，可以提高光电检测器的性能并简化其制造工艺。

公开(公告)号：US08815683B2

公开(公告)日：2014-08-26

申请号：US12029528

申请日：2008-02-12

申请人： Sangsig Kim ,  Chang Jun Yoon ,  Dong Young Jeong ,  Dong Hyuk Yeom

发明人： Sangsig Kim ,  Chang Jun Yoon ,  Dong Young Jeong ,  Dong Hyuk Yeom

IPC分类号： H01L29/72

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0014 ,  G11C2213/17 ,  G11C2213/18 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/7881 ,  H01L29/792

摘要： A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.

摘要翻译： 一种包括纳米线通道和纳米颗粒浮动栅节点的非易失性存储器电子器件，其中包括用作电荷传输通道的半导体纳米线和用作电荷捕获层的纳米线的非易失性存储器电子器件通过使纳米粒子 被吸附在沉积在半导体纳米线的表面上的隧道层上，由此通过施加到栅极的电压将移动通过纳米线的载流子隧穿到纳米颗粒，然后，电荷载体从纳米颗粒隧穿到纳米线，由 已经施加到栅极的电压的变化，由此非易失性存储器电子器件可以在低电压下操作并且增加其操作速度。

公开(公告)号：US20060097247A1

公开(公告)日：2006-05-11

申请号：US11102930

申请日：2005-04-11

申请人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Jang

发明人： Sangsig Kim ,  Hyunsuk Kim ,  Eun Jang

IPC分类号： H01L29/08

CPC分类号： H01L31/0352 ,  B82Y15/00 ,  B82Y30/00 ,  H01L31/09 ,  Y10S977/773

摘要： The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

摘要翻译： 本发明涉及一种使用纳米颗粒的光电检测器，更具体地说，涉及一种新颖的光电检测器，其中通过湿胶体方法合成的纳米颗粒的表面被有机材料覆盖，然后有机材料然后用作电子迁移的通道或纳米颗粒，有机材料从其上被覆盖 去除纳米颗粒的表面以形成紧密堆积的颗粒结构，直接用于输送电子。 根据本发明的具体实施例，可以提高光电检测器的性能并简化其制造过程。

公开(公告)号：US09231052B2

公开(公告)日：2016-01-05

申请号：US14370212

申请日：2012-01-04

申请人： Sangsig Kim ,  Myeong-Won Lee ,  Youngin Jeon

发明人： Sangsig Kim ,  Myeong-Won Lee ,  Youngin Jeon

IPC分类号： H01L29/06 ,  H01L21/82 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306 ,  H01L29/10 ,  H01L29/51 ,  H01L29/66 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/775 ,  H01L29/16

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/30608 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78696

摘要： A transistor using a single crystal silicon nanowire and a method for fabricating the transistor is disclosed. The transistor using a single crystal silicon nanowire comprises a substrate and a single crystal silicon nanowire formed on the substrate. Here, the single crystal silicon nanowire comprises a source region and a drain region formed longitudinally with the single crystal silicon nanowire and separate from each other, and a channel region located between the source region and the drain region, wherein the perpendicular thickness of the channel region to the longitudinal direction is thinner than the thickness of the source region and the drain region.

摘要翻译： 公开了一种使用单晶硅纳米线的晶体管及其制造方法。 使用单晶硅纳米线的晶体管包括在衬底上形成的衬底和单晶硅纳米线。 这里，单晶硅纳米线包括与单晶硅纳米线纵向形成且彼此分离的源极区域和漏极区域以及位于源极区域和漏极区域之间的沟道区域，其中沟道的垂直厚度 纵向方向的区域比源极区域和漏极区域的厚度薄。

公开(公告)号：US20140353591A1

公开(公告)日：2014-12-04

申请号：US14370212

申请日：2012-01-04

申请人： Sangsig Kim ,  Myeong-Won Lee ,  Youngin Jeon

发明人： Sangsig Kim ,  Myeong-Won Lee ,  Youngin Jeon

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L21/306 ,  H01L29/51 ,  H01L21/02 ,  H01L29/66 ,  H01L29/10

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/30608 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78696

摘要： A transistor using a single crystal silicon nanowire and a method for fabricating the transistor is disclosed. The transistor using a single crystal silicon nanowire comprises a substrate and a single crystal silicon nanowire formed on the substrate. Here, the single crystal silicon nanowire comprises a source region and a drain region formed longitudinally with the single crystal silicon nanowire and separate from each other, and a channel region located between the source region and the drain region, wherein the perpendicular thickness of the channel region to the longitudinal direction is thinner than the thickness of the source region and the drain region.

摘要翻译： 公开了一种使用单晶硅纳米线的晶体管及其制造方法。 使用单晶硅纳米线的晶体管包括在衬底上形成的衬底和单晶硅纳米线。 这里，单晶硅纳米线包括与单晶硅纳米线纵向形成且彼此分离的源极区域和漏极区域以及位于源极区域和漏极区域之间的沟道区域，其中沟道的垂直厚度 区域的长度方向比源极区域和漏极区域的厚度薄。

公开(公告)号：US07972931B2

公开(公告)日：2011-07-05

申请号：US11623775

申请日：2007-01-17

申请人： Sangsig Kim ,  Kyoung-Ah Cho ,  Dong-Won Kim ,  Jae-Won Jang

发明人： Sangsig Kim ,  Kyoung-Ah Cho ,  Dong-Won Kim ,  Jae-Won Jang

IPC分类号： H01L21/477

CPC分类号： H01L29/78681 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  Y10S977/773 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/936

摘要： The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited on the substrates to facilitate formation of nanoparticle films. Sintered nanoparticles are used as an active layer and dielectric materials of high dielectric coefficient are also used as a gate dielectric layer to form a top gate electrode on the gate dielectric layer, thereby enabling low-voltage operation and low-temperature fabrication.

摘要翻译： 本发明涉及使用由该方法制造的纳米粒子和薄膜晶体管制造薄膜晶体管的方法。 在衬底上沉积亲水性缓冲层以促进纳米颗粒膜的形成。 使用烧结纳米粒子作为有源层，并且还使用高介电常数的介电材料作为栅极电介质层，以在栅极电介质层上形成顶部栅电极，从而实现低电压操作和低温制造。