公开(公告)号：US20180212144A1

公开(公告)日：2018-07-26

申请号：US15661667

申请日：2017-07-27

申请人： The Aerospace Corporation

发明人： Adam W. Bushmaker ,  Don Walker

IPC分类号： H01L45/00 ,  H01L51/05 ,  H01L51/00 ,  G11C13/02

CPC分类号： H01L45/1206 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/008 ,  G11C2013/009 ,  G11C2213/16 ,  G11C2213/17 ,  H01L45/08 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/149 ,  H01L45/1641 ,  H01L51/0048 ,  H01L51/0508

摘要： A carbon nanotube (CNT) single ion memory (or memory device) may include a mobile ion conductor with a CNT on one side and an ion drift electrode (IDE) on the other side. The mobile ion conductor may be used as a transport medium to shuttle ions to and from the CNT and the IDE. The IDE may move the ions towards or away from the CNT.

公开(公告)号：US20180090203A1

公开(公告)日：2018-03-29

申请号：US15278603

申请日：2016-09-28

申请人： International Business Machines Corporation

发明人： Lukas Czornomaz ,  Veeresh Vidyadhar Deshpande ,  Vara Sudanan Prasad Jonnalagadda ,  Wabe Koelmans ,  Abu Sebastian

IPC分类号： G11C13/00

CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/15 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2213/75 ,  G11C2213/76

摘要： Apparatus including: memory cell unit(s) having a variable-resistance channel component (CC) extending between first and second supply terminals for supplying read and write (R/W) signals to the unit in respective R/W modes, and resistive memory elements (RMEs) arranged along the CC, RME includes resistive memory material (RMM), extending along a respective channel segment (CHS) of the CC in contact therewith, in which respective lengths along that CHS of high- and low-resistance regions is variable in write mode, and a gate terminal provided on that CHS for controlling resistance of the CHS in response to control signal(s) (CS) applied to the gate terminal; and circuitry configured to apply the CS such that, in read mode, a RME(s) is selected by applying a CS producing CHS with resistance between the resistance regions of the RMM; and remaining RME(s) are deselected by applying CS producing CHS having resistance less than the low-resistance region.

公开(公告)号：US09741764B1

公开(公告)日：2017-08-22

申请号：US15257609

申请日：2016-09-06

申请人： Samsung Electronics Co., Ltd.

发明人： Masayuki Terai ,  Gwan-hyeob Koh ,  Dae-hwan Kang

IPC分类号： H01L27/00 ,  H01L27/24 ,  H01L45/00 ,  H01L27/11582 ,  H01L27/10 ,  G11C13/00 ,  H01L27/06

CPC分类号： H01L27/2427 ,  G11C11/1659 ,  G11C13/0002 ,  G11C13/003 ,  G11C2213/17 ,  G11C2213/71 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/11582 ,  H01L27/2454 ,  H01L27/2481 ,  H01L27/249 ,  H01L43/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： A memory device may include a substrate, a first conductive line on the substrate and extending in a first direction, a second conductive line over the first conductive line and extending in a second direction crossing the first direction, a third conductive line over the second conductive line and extending in the first direction, a first memory cell at an intersection of the first conductive line and the second conductive line and including a first selection element layer and a first variable resistance layer, and a second memory cell at an intersection of the second conductive line and the third conductive line and including a second selection element layer and a second variable resistance layer. A first height of the first selection element layer in a third direction perpendicular to the first and second directions is different than a second height of the second selection element layer in the third direction.

公开(公告)号：US20150103583A1

公开(公告)日：2015-04-16

申请号：US14385623

申请日：2013-03-14

申请人： NEC CORPORATION

发明人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Makoto Miyamura

IPC分类号： G11C13/00 ,  H01L45/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/17 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1608

摘要： This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.

摘要翻译： 该可变电阻元件设置有可变电阻膜，与可变电阻膜的一个表面接触设置的第一电极和与可变电阻膜的另一个表面接触的第二电极。 第一电极和第二电极分别具有角部，并且将第一和第二电极的角部之间的距离设定为等于第一和第二电极之间的最短距离。 此外，可变电阻元件具有设置在可变电阻膜的一个表面上的第三电极。

公开(公告)号：US20130079230A1

公开(公告)日：2013-03-28

申请号：US13703225

申请日：2011-06-03

申请人： Ulrich Poppe ,  Dieter Weber ,  Yuriy Divin ,  Mikhail Faley

发明人： Ulrich Poppe ,  Dieter Weber ,  Yuriy Divin ,  Mikhail Faley

IPC分类号： H01L39/22

CPC分类号： H01L39/223 ,  G11C13/0007 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/53 ,  H01L39/145 ,  H01L39/228 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/147

摘要： A three-port component comprises a source electrode, a drain electrode, and a channel, which is corrected between the source electrode and the drain electrode and which is made of a material haying an electronic conductivity that can be varied by supplying and/or removing ions. The three-port component comprises an ion reservoir, which is in contact with a gate electrode, and which is connected to the channel so that the reservoir is able to exchange ions with the channel when a potential is applied to the gate electrode. Information can be stored on the three-port component by distributing the total number of ions, which are present in the ion reservoir and the channel, between the ion reservoir and the channel. The distribution of ions in the channel and the ion reservoir changes when, and only when, a corresponding driving potential is applied to the gate electrode. Thus, in contrast to RRAMS, there is no time-voltage dilemma.

摘要翻译： 三端口部件包括源电极，漏电极和沟道，其在源电极和漏电极之间被校正，并且由具有电导率的材料制成，该材料可以通过供应和/或去除 离子。 三端口部件包括与栅电极接触的离子储存器，并且连接到通道，使得当电势施加到栅电极时，储存器能够与沟道交换离子。 信息可以通过分布在离子储存器和通道之间的离子储存器和通道中存在的总离子数存储在三端口部件上。 当并且仅当相应的驱动电位被施加到栅极电极时，通道和离子储存器中的离子分布发生变化。 因此，与RRAMS相比，没有时间电压困境。

公开(公告)号：US20120181621A1

公开(公告)日：2012-07-19

申请号：US11973035

申请日：2007-10-05

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L27/105

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的漏极的场效应器件。 在一个实施例中，场效应器件包括第一半导体类型的源极区和漏极区以及设置在第二半导体类型之间的沟道区。 源区域连接到相应的终端。 栅极结构设置在沟道区域上并连接到相应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。 纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

公开(公告)号：US20110315962A1

公开(公告)日：2011-12-29

申请号：US13083817

申请日：2011-04-11

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L29/06 ,  H01L21/66 ,  H01L21/20 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。描述了纳米检测器器件。

公开(公告)号：US08085583B2

公开(公告)日：2011-12-27

申请号：US12458099

申请日：2009-06-30

申请人： Dong-seok Suh

发明人： Dong-seok Suh

IPC分类号： G11C11/00

CPC分类号： H01L27/2481 ,  B82Y10/00 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/17 ,  G11C2213/52 ,  G11C2213/71 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： A phase change random access memory device is disclosed including a first electrode, a second electrode, a phase change material layer between the first and second electrode, a plurality of gate layers formed along the phase change material layer, an insulating film between the phase change material layer and the plurality of gate layers, and a plurality of interlayer insulating layers between the plurality of gate layers and between the first and second electrode and the plurality of gate layers, in which multiple bits of information may be stored in a single memory cell corresponding to the positions of the plurality of gate layers.

摘要翻译： 公开了一种相变随机存取存储器件，包括第一电极，第二电极，第一和第二电极之间的相变材料层，沿相变材料层形成的多个栅极层，相变材料之间的绝缘膜 材料层和多个栅极层，以及在多个栅极层之间以及在第一和第二电极与多个栅极层之间的多个层间绝缘层，其中多个信息位可以存储在单个存储器单元中 对应于多个栅极层的位置。

公开(公告)号：US08064253B2

公开(公告)日：2011-11-22

申请号：US12560040

申请日：2009-09-15

申请人： Bipul C. Paul

发明人： Bipul C. Paul

IPC分类号： G11C16/04

CPC分类号： B82Y10/00 ,  G11C11/5692 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/17 ,  H01L27/112 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/685 ,  H01L51/0048 ,  H01L51/0512

摘要： A multivalued memory device which includes a first multivalued memory transistor and a second multivalued memory transistor, wherein each transistor has a channel made from at least one carbon nanotube or nanowire, wherein data is stored by varying the number of carbon nanotubes or nanowires used in the channel, wherein the channel is the at least one carbon nanotube or nanowire which allows current to flow through it.

摘要翻译： 一种多值存储器件，包括第一多值存储晶体管和第二多值存储晶体管，其中每个晶体管具有由至少一个碳纳米管或纳米线制成的通道，其中通过改变在所述碳纳米管或纳米线中使用的碳纳米管或纳米线的数量来存储数据 通道，其中所述通道是允许电流流过其中的至少一个碳纳米管或纳米线。

公开(公告)号：US08014189B2

公开(公告)日：2011-09-06

申请号：US12636554

申请日：2009-12-11

申请人： Takayuki Tsukamoto ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Takahiro Hirai ,  Shinya Aoki ,  Toshiro Hiraoka

发明人： Takayuki Tsukamoto ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Takahiro Hirai ,  Shinya Aoki ,  Toshiro Hiraoka

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/1436 ,  G11B9/1481 ,  G11B9/149 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/17 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/147 ,  H01L45/1625

摘要： An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Cr, Mo, W, Mn and Re, and X includes O.

摘要翻译： 一种信息记录/再现装置，包括记录层，以及通过在记录层中产生相位变化而将数据记录到记录层的记录电路。 记录层包括具有尖晶石结构的第一化合物。 记录层为AxMyX4（0.1＆nlE; x＆nlE; 2.2,1.0＆nlE; y＆nlE; 2.0），其中A包括选自Zn，Cd和Hg的一种，M包括选自Cr，Mo，W， Mn和Re，X包括O.