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1.发明申请Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer 有权通过原子层沉积形成包括镝和钪的电介质的方法和包括电介质层的集成电路器件公开(公告)号：US20090039415A1
公开(公告)日：2009-02-12
申请号：US12153952
申请日：2008-05-28
申请人： Hoonsang Choi , Bongjin Kuh , Sunjung Kim , Youngsun Kim , Seunghwan Lee , Sangwook Lim , Chunhyung Chung
发明人： Hoonsang Choi , Bongjin Kuh , Sunjung Kim , Youngsun Kim , Seunghwan Lee , Sangwook Lim , Chunhyung Chung
IPC分类号： H01L21/28 , H05K3/00 , H01L29/792 , C23C16/00
CPC分类号： H01L29/513 , C23C16/40 , C23C16/45531 , C23C16/45553 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/78
摘要： In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.
摘要翻译： 在一个实施例中，形成电介质层的方法包括在小于400摄氏度的温度下向包括衬底的腔室供应第一前体。 第一个前体包括镝。 将第一反应气体供应到室以与第一前体反应。 在小于400摄氏度的温度下将第二前体供应到室，并且第二前体包括钪。 将第二反应气体供应到室以与第二前体反应。
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2.发明授权Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer 有权通过原子层沉积形成包括镝和钪的电介质的方法和包括电介质层的集成电路器件公开(公告)号：US08105930B2
公开(公告)日：2012-01-31
申请号：US12153952
申请日：2008-05-28
申请人： Hoonsang Choi , Bongjin Kuh , Sunjung Kim , Youngsun Kim , Seunghwan Lee , Sangwook Lim , Chunhyung Chung
发明人： Hoonsang Choi , Bongjin Kuh , Sunjung Kim , Youngsun Kim , Seunghwan Lee , Sangwook Lim , Chunhyung Chung
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/513 , C23C16/40 , C23C16/45531 , C23C16/45553 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/78
摘要： In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.
摘要翻译： 在一个实施例中，形成电介质层的方法包括在小于400摄氏度的温度下向包括衬底的腔室供应第一前体。 第一个前体包括镝。 将第一反应气体供应到室以与第一前体反应。 在小于400摄氏度的温度下将第二前体供应到室，并且第二前体包括钪。 将第二反应气体供应到室以与第二前体反应。
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