公开(公告)号：US20090039415A1

公开(公告)日：2009-02-12

申请号：US12153952

申请日：2008-05-28

申请人： Hoonsang Choi ,  Bongjin Kuh ,  Sunjung Kim ,  Youngsun Kim ,  Seunghwan Lee ,  Sangwook Lim ,  Chunhyung Chung

发明人： Hoonsang Choi ,  Bongjin Kuh ,  Sunjung Kim ,  Youngsun Kim ,  Seunghwan Lee ,  Sangwook Lim ,  Chunhyung Chung

IPC分类号： H01L21/28 ,  H05K3/00 ,  H01L29/792 ,  C23C16/00

CPC分类号： H01L29/513 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31604 ,  H01L29/517 ,  H01L29/78

摘要： In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.

摘要翻译： 在一个实施例中，形成电介质层的方法包括在小于400摄氏度的温度下向包括衬底的腔室供应第一前体。 第一个前体包括镝。 将第一反应气体供应到室以与第一前体反应。 在小于400摄氏度的温度下将第二前体供应到室，并且第二前体包括钪。 将第二反应气体供应到室以与第二前体反应。

公开(公告)号：US08105930B2

公开(公告)日：2012-01-31

申请号：US12153952

申请日：2008-05-28

申请人： Hoonsang Choi ,  Bongjin Kuh ,  Sunjung Kim ,  Youngsun Kim ,  Seunghwan Lee ,  Sangwook Lim ,  Chunhyung Chung

发明人： Hoonsang Choi ,  Bongjin Kuh ,  Sunjung Kim ,  Youngsun Kim ,  Seunghwan Lee ,  Sangwook Lim ,  Chunhyung Chung

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/513 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31604 ,  H01L29/517 ,  H01L29/78

摘要： In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.

摘要翻译： 在一个实施例中，形成电介质层的方法包括在小于400摄氏度的温度下向包括衬底的腔室供应第一前体。 第一个前体包括镝。 将第一反应气体供应到室以与第一前体反应。 在小于400摄氏度的温度下将第二前体供应到室，并且第二前体包括钪。 将第二反应气体供应到室以与第二前体反应。

公开(公告)号：US20100227479A1

公开(公告)日：2010-09-09

申请号：US12660793

申请日：2010-03-04

申请人： Sunjung Kim ,  JongCheol Lee ,  Bonyoung Koo ,  Wansik Hwang ,  Joon Gon Lee ,  JungHyeon Kim

发明人： Sunjung Kim ,  JongCheol Lee ,  Bonyoung Koo ,  Wansik Hwang ,  Joon Gon Lee ,  JungHyeon Kim

IPC分类号： H01L21/3105

CPC分类号： H01L21/3143 ,  H01L21/02175 ,  H01L21/022 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/788 ,  H01L29/792

摘要： Provided are a semiconductor device and a method of fabricating the same. The method includes forming a metal nitride layer and a metal oxide layer on a semiconductor substrate to be in contact with each other, and annealing the substrate including the metal nitride layer and the metal oxide layer to form a metal oxynitride layer.

摘要翻译： 提供半导体器件及其制造方法。 该方法包括在半导体衬底上形成金属氮化物层和金属氧化物层以彼此接触，并且使包括金属氮化物层和金属氧化物层的衬底退火以形成金属氧氮化物层。

公开(公告)号：US10593801B2

公开(公告)日：2020-03-17

申请号：US15062553

申请日：2016-03-07

申请人： Tae-Jong Lee ,  Sanghyuk Hong ,  TaeYong Kwon ,  Sunjung Kim ,  Cheol Kim

发明人： Tae-Jong Lee ,  Sanghyuk Hong ,  TaeYong Kwon ,  Sunjung Kim ,  Cheol Kim

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66 ,  H01L21/8238

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.

公开(公告)号：US08283719B2

公开(公告)日：2012-10-09

申请号：US12894615

申请日：2010-09-30

申请人： ZongLiang Huo ,  Myoungbum Lee ,  Kihyun Hwang ,  Seungmok Shin ,  Sunjung Kim

发明人： ZongLiang Huo ,  Myoungbum Lee ,  Kihyun Hwang ,  Seungmok Shin ,  Sunjung Kim

IPC分类号： H01L29/792 ,  H01L29/788 ,  H01L29/76

CPC分类号： H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a stacked structure, a semiconductor pattern, an information storage layer, and a fixed charge layer. The stacked structure may be disposed over a semiconductor substrate. The stacked structure may include conductive patterns and interlayer dielectric patterns alternately stacked therein. The semiconductor pattern may be connected to the semiconductor substrate by passing through the stacked structure. The information storage layer may be disposed between the semiconductor pattern and the conductive patterns. The fixed charge layer may be disposed between the semiconductor pattern and the interlayer dielectric pattern. The fixed charge layer may include fixed charges. Electrical polarity of the fixed charges may be equal to electrical polarity of majority carriers of the semiconductor pattern.

摘要翻译： 提供一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括堆叠结构，半导体图案，信息存储层和固定电荷层。 层叠结构可以设置在半导体衬底上。 层叠结构可以包括交替堆叠在其中的导电图案和层间电介质图案。 半导体图案可以通过层叠结构连接到半导体衬底。 信息存储层可以设置在半导体图案和导电图案之间。 固定电荷层可以设置在半导体图案和层间电介质图案之间。 固定电荷层可以包括固定电荷。 固定电荷的电极性可以等于半导体图案的多数载流子的电极性。

公开(公告)号：US07528416B2

公开(公告)日：2009-05-05

申请号：US11476627

申请日：2006-06-29

申请人： Sunjung Kim ,  Hyunjae Lee ,  Geunho Kim

发明人： Sunjung Kim ,  Hyunjae Lee ,  Geunho Kim

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/40 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of electrolytic plating method in which no high temperature process is required to obviate occurrence of defects on the devices, and the metal support layer containing a soft metal and a hard metal is formed on the light emitting structure to prevent occurrence of warping of a wafer to increase the mechanical strength and to improve reliability.

摘要翻译： 公开了一种垂直结构发光二极管（LED）及其制造方法，其中通过不需要高温处理以消除发生的电解电镀方法在发光结构的上表面上形成金属支撑层 在发光结构上形成包含软金属和硬金属的金属支撑层，以防止晶片翘曲发生，从而提高机械强度并提高可靠性。

公开(公告)号：US09577043B2

公开(公告)日：2017-02-21

申请号：US14826174

申请日：2015-08-13

申请人： Jongryeol Yoo ,  Hyun Jung Lee ,  Sunjung Kim ,  Seung Hun Lee ,  Eunhye Choi

发明人： Jongryeol Yoo ,  Hyun Jung Lee ,  Sunjung Kim ,  Seung Hun Lee ,  Eunhye Choi

IPC分类号： H01L29/10 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/1054 ,  H01L21/823412 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/7849

摘要： A semiconductor device includes a buffer layer on a semiconductor substrate including first and second regions, a first channel layer on the buffer layer of the first region, a second channel layer on the buffer layer of the second region, and a spacer layer between the second channel layer and the buffer layer. The buffer layer, the first and second channel layers, and the spacer layer are formed of semiconductor materials including germanium. A germanium concentration difference between the first and second channel layers is greater than a germanium concentration difference between the buffer layer and the second channel layer. The spacer layer has a germanium concentration gradient.

摘要翻译： 半导体器件包括在半导体衬底上的包括第一和第二区域的缓冲层，第一区域的缓冲层上的第一沟道层，第二区域的缓冲层上的第二沟道层以及第二区域之间的间隔层 通道层和缓冲层。 缓冲层，第一和第二沟道层以及间隔层由包括锗的半导体材料形成。 第一和第二沟道层之间的锗浓度差大于缓冲层和第二沟道层之间的锗浓度差。 间隔层具有锗浓度梯度。

公开(公告)号：US09129830B2

公开(公告)日：2015-09-08

申请号：US13494236

申请日：2012-06-12

申请人： Ingyu Baek ,  Sunjung Kim

发明人： Ingyu Baek ,  Sunjung Kim

IPC分类号： H01L27/06 ,  H01L27/10 ,  H01L27/22 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC分类号： H01L27/0688 ,  G11C11/16 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/71 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/101 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

摘要： Three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include first, second and third conductive lines disposed at different vertical levels to define two intersections, and two memory cells disposed at the two intersections, respectively. The first and second conductive lines may extend parallel to each other, and the third conductive line may extend to cross the first and second conductive lines. The first and second conductive lines can be alternatingly arranged along the length of third conductive line in vertical sectional view, and the third conductive line may be spaced vertically apart from the first and second conductive lines.

摘要翻译： 三维半导体存储器件及其制造方法。 该装置可以包括设置在不同垂直级别的第一，第二和第三导线，以分别设置在两个交叉点处的两个交叉点和两个存储器单元。 第一和第二导线可以彼此平行地延伸，并且第三导线可以延伸以跨过第一和第二导电线。 第一和第二导线可以沿着第三导线的长度在垂直剖视图中交替布置，并且第三导线可以与第一和第二导线垂直分开。

公开(公告)号：US20070001190A1

公开(公告)日：2007-01-04

申请号：US11476627

申请日：2006-06-29

申请人： Sunjung Kim ,  Hyunjae Lee ,  Geunho Kim

发明人： Sunjung Kim ,  Hyunjae Lee ,  Geunho Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/40 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of electrolytic plating method in which no high temperature process is required to obviate occurrence of defects on the devices, and the metal support layer containing a soft metal and a hard metal is formed on the light emitting structure to prevent occurrence of warping of a wafer to increase the mechanical strength and to improve reliability.

摘要翻译： 公开了一种垂直结构发光二极管（LED）及其制造方法，其中通过不需要高温处理以消除发生的电解电镀方法在发光结构的上表面上形成金属支撑层 在发光结构上形成包含软金属和硬金属的金属支撑层，以防止晶片翘曲发生，从而提高机械强度并提高可靠性。