DEVICE-COMPATIBLE DINNERWARE
    1.
    发明申请
    DEVICE-COMPATIBLE DINNERWARE 审中-公开
    设备兼容的DINNERWARE

    公开(公告)号:US20150359361A1

    公开(公告)日:2015-12-17

    申请号:US14302161

    申请日:2014-06-11

    IPC分类号: A47G19/02 A45C11/00

    摘要: This invention represents a new category of dinnerware. The invention is configured to be compatible with, and enable insertion and use of, a smart phone or other electronic device, or other source of dynamic content, under or within the body of the dinnerware or in an appendage or attachment to be visible to the user.

    摘要翻译: 本发明代表了一种新类型的餐具。 本发明被配置为与智能电话或其他电子设备或动物内容的其他来源兼容并且能够插入和使用在餐具的主体内或内部,或附属物或附件中以使其可见 用户。

    BIDIRECTIONAL SILICON CARBIDE TRANSIENT VOLTAGE SUPPRESSION DEVICES
    3.
    发明申请
    BIDIRECTIONAL SILICON CARBIDE TRANSIENT VOLTAGE SUPPRESSION DEVICES 有权
    双向碳化硅瞬态电压抑制器件

    公开(公告)号:US20100237356A1

    公开(公告)日:2010-09-23

    申请号:US12408167

    申请日:2009-03-20

    IPC分类号: H01L27/06 H01L29/24 H01L21/04

    摘要: An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.

    摘要翻译: 电子器件包括具有第一导电类型且具有与第一表面相对的第一表面和第二表面的碳化硅层以及碳化硅层上的第一和第二碳化硅齐纳二极管。 第一和第二碳化硅齐纳二极管中的每一个可以包括具有与碳化硅层上的第一导电类型相反的第二导电类型的第一重掺杂碳化硅区域和在第一重掺杂碳化硅区域上的欧姆接触。

    Metrology tool error log analysis methodology and system

    公开(公告)号:US20060293778A1

    公开(公告)日:2006-12-28

    申请号:US11407543

    申请日:2006-04-19

    IPC分类号: G06F19/00

    摘要: A method of identifying failures in a metrology tool system used to measure desired dimensions in microelectronic features. Each metrology tool in the system runs a plurality of recipes for measuring desired dimensions in microelectronic features, with each recipe comprising a set of instructions for measuring at least one dimension in a microelectronic feature. The system includes an error log having stored thereon failures in measurement of microelectronic feature dimensions. The method includes determining normalized number of errors for the recipes used by the metrology tool from the failures stored in the error log, identifying one or more recipes having the greatest normalized number of errors in the error log, identifying, in a list of jobs to be performed by the metrology tool, the one or more identified recipes having the greatest normalized number of errors, and from the identified one or more recipes having the greatest normalized number of errors, determining the cause of the errors in the one or more recipes. The method then includes effecting a change in the one or more identified recipes having the greatest normalized number of errors to correct the errors therein and tracking a metrology tool job having the one or more recipes in which a change has been effected to determine whether the cause of errors has been corrected.

    Bidirectional silicon carbide transient voltage suppression devices
    5.
    发明授权
    Bidirectional silicon carbide transient voltage suppression devices 有权
    双向碳化硅瞬态电压抑制装置

    公开(公告)号:US08445917B2

    公开(公告)日:2013-05-21

    申请号:US12408167

    申请日:2009-03-20

    IPC分类号: H01L29/15 H01L29/861

    摘要: An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.

    摘要翻译: 电子器件包括具有第一导电类型且具有与第一表面相对的第一表面和第二表面的碳化硅层以及碳化硅层上的第一和第二碳化硅齐纳二极管。 第一和第二碳化硅齐纳二极管中的每一个可以包括具有与碳化硅层上的第一导电类型相反的第二导电类型的第一重掺杂碳化硅区域和在第一重掺杂碳化硅区域上的欧姆接触。

    Collapsible stroller
    6.
    发明申请
    Collapsible stroller 审中-公开
    可折叠婴儿车

    公开(公告)号:US20090267325A1

    公开(公告)日:2009-10-29

    申请号:US12150178

    申请日:2008-04-25

    IPC分类号: B62B7/06

    摘要: A collapsible stroller having a frame including a pair of S-shaped members pivotably joined together at their inflection points, a lower frame assembly suspended by L-shaped brackets, a handle extension mechanism, and a soft goods storage console. The S-shaped frame members and L-shaped bracket mounting of the lower frame assembly provide improved access to a storage volume located beneath the seat.

    摘要翻译: 一种可折叠婴儿车,具有框架,该框架包括在其拐点处可枢转地连接在一起的一对S形构件,由L形支架悬挂的下框架组件,手柄延伸机构和软物品存放控制台。 下框架组件的S形框架构件和L形支架安装件改善了进入位于座椅下方的存储容积。