摘要:
A vertical furnace for use in a semiconductor manufacturing apparatus, which comprises a heater, an outer tube, an inner tube, all being disposed concentrically in a multi-layered fashion, a boat adapted to be introduced into the inner tube with a wafer loaded thereon, and a boat cover disposed internally of the inner tube concentrically therewith. The boat cover is comprised of a boat cover body and an auxiliary cover plate connected to said boat cover body with a given gap therebetween, the boat cover body having a predetermined number of slit apertures extending in a generator direction thereof, the auxiliary cover plate being disposed to cover the slit apertures. The introduced reactive gas flows in branched streams, one flowing through the inside of the boat cover and the other flowing in past the boat cover, whereby the film deposited on the wafer is improved in uniformity and homogeneity. Further, since the boat cover is provided on the inner tube in the form of a unitary body, adjustments relative thereto can be made easily, thus improving the efficiency of the maintenance works thereof.
摘要:
In the semiconductor manufacturing apparatus according to the present invention, there are provided a cassette stocker for accommodating wafer cassettes loaded with wafers, a reaction furnace provided with heating means, a reaction gas introducing means for introducing reaction gas into the reaction furnace, a gas discharging means for discharging exhaust gas in the reaction furnace, a boat for supporting wafers, a buffer cassette stocker for storing unprocessed wafers, a boat elevating means for inserting the boat into and retrieving the boat from the reaction furnace, a wafer transfer means for transferring wafers between the boat and the wafer cassette accommodated on the cassette stocker, and a wafer cassette transfer means for transferring wafer cassettes between the buffer cassette stocker and the cassette stocker, and the buffer cassette stocker is enclosed to provide an antioxidation area to prevent natural oxidation of the wafers in standby status.