公开(公告)号：US06769259B2

公开(公告)日：2004-08-03

申请号：US10347797

申请日：2003-01-22

申请人： Kazunori Yamanaka ,  Satoshi Kondou ,  Masami Noda

发明人： Kazunori Yamanaka ,  Satoshi Kondou ,  Masami Noda

IPC分类号： F02C608

CPC分类号： F02C7/18 ,  F02C3/10 ,  F02C7/143 ,  F02C7/185 ,  F02C7/2365

摘要： A gas turbine has a cooling air system supplying air for cooling a high temperature part of the gas turbine and a spray air system supplying air for spraying fuel into a combustor and is formed so that a part of high-pressure air compressed by a gas turbine compressor is used as air of the cooling air system and spray air system, wherein a heat exchanger and a boost compressor are arranged downstream of the outlet of compressed air of the gas turbine compressor, and the boost compressor is composed of a parallel connection of a compressor driven by the turbine shaft and ae compressor driven by a driven source other than the turbine shaft, and pressurized air from the boost compressor is used as air for the cooling air system and the spray air system.

摘要翻译： 燃气轮机具有供给用于冷却燃气轮机的高温部分的空气的冷却空气系统和向燃烧器喷射燃料而供给空气的喷射空气系统，并且形成为使得由燃气轮机压缩的高压空气的一部分 压缩机用作冷却空气系统和喷雾空气系统的空气，其中热交换器和增压压缩机布置在燃气轮机压缩机的压缩空气出口的下游，并且增压压缩机由 由涡轮机轴驱动的压缩机和由涡轮机轴以外的驱动源驱动的压缩机，并且来自增压压缩机的加压空气用作冷却空气系统和喷雾空气系统的空气。

公开(公告)号：US08507984B2

公开(公告)日：2013-08-13

申请号：US13355678

申请日：2012-01-23

申请人： Satoshi Kondou

发明人： Satoshi Kondou

IPC分类号： H01L29/76

CPC分类号： H01L29/404 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes a source region embedded in the surface of the second semiconductor region, a drain region embedded in the surface of the first semiconductor region separated from the second semiconductor region, a gate electrode located on the second semiconductor region, an insulation film located on the first semiconductor region between the second semiconductor region and the drain region, a voltage dividing element dividing the voltage between the gate electrode and the drain region, and a charge transfer limiting element limiting transfer of charge from the voltage dividing element to the drain region.

摘要翻译： 半导体器件包括嵌入在第二半导体区域的表面中的源极区域，嵌入在与第二半导体区域分离的第一半导体区域的表面中的漏极区域，位于第二半导体区域上的栅极电极，位于 在第二半导体区域和漏极区域之间的第一半导体区域上，划分栅极电极和漏极区域之间的电压的分压元件和限制电荷从分压元件到漏极区域的转移的电荷转移限制元件 。

公开(公告)号：US20120217581A1

公开(公告)日：2012-08-30

申请号：US13355678

申请日：2012-01-23

申请人： Satoshi KONDOU

发明人： Satoshi KONDOU

IPC分类号： H01L27/06 ,  H01L29/78

CPC分类号： H01L29/404 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes a source region embedded in the surface of the second semiconductor region, a drain region embedded in the surface of the first semiconductor region separated from the second semiconductor region, a gate electrode located on the second semiconductor region, an insulation film located on the first semiconductor region between the second semiconductor region and the drain region, a voltage dividing element dividing the voltage between the gate electrode and the drain region, and a charge transfer limiting element limiting transfer of charge from the voltage dividing element to the drain region.

摘要翻译： 半导体器件包括嵌入在第二半导体区域的表面中的源极区域，嵌入在与第二半导体区域分离的第一半导体区域的表面中的漏极区域，位于第二半导体区域上的栅极电极，位于 在第二半导体区域和漏极区域之间的第一半导体区域上，划分栅极电极和漏极区域之间的电压的分压元件和限制电荷从分压元件到漏极区域的转移的电荷转移限制元件 。

公开(公告)号：US20120163047A1

公开(公告)日：2012-06-28

申请号：US13329909

申请日：2011-12-19

申请人： Hideyuki KUBOTA ,  Satoshi Kondou

发明人： Hideyuki KUBOTA ,  Satoshi Kondou

IPC分类号： H02M1/36 ,  G05F1/565

CPC分类号： H02M1/36 ,  Y10S323/901

摘要： A startup circuit includes a MOSFET that is connected between a startup power source and an auxiliary power source made of a smoothing capacitor and passes a startup current from the startup power source to the smoothing capacitor, a JFET that has a drain terminal connected to a drain terminal of the MOSFET and a source terminal connected through a resistor to a gate terminal of the MOSFET, and a pinch-off voltage controller that controls a pinch-off voltage of the JFET to a first reference voltage at startup and to a second reference voltage, which is lower than the first reference voltage, after startup.

摘要翻译： 启动电路包括连接在启动电源和由平滑电容器构成的辅助电源之间并将启动电流从启动电源传递到平滑电容器的MOSFET，JFET，其漏极端子连接到漏极 MOSFET的端子和通过电阻器连接到MOSFET的栅极端子的源极端子以及夹断电压控制器，其将JFET的夹断电压控制为启动时的第一参考电压和第二参考电压 ，低于第一参考电压。

公开(公告)号：US06530229B2

公开(公告)日：2003-03-11

申请号：US10107400

申请日：2002-03-28

申请人： Kazunori Yamanaka ,  Satoshi Kondou ,  Masami Noda

发明人： Kazunori Yamanaka ,  Satoshi Kondou ,  Masami Noda

IPC分类号： F02C608

CPC分类号： F02C7/18 ,  F02C3/10 ,  F02C7/143 ,  F02C7/185 ,  F02C7/2365

摘要： A gas turbine has a cooling air system supplying air for cooling a high temperature part of the gas turbine and a spray air system supplying air for spraying fuel into a combustor and is formed so that a part of high-pressure air compressed by a gas turbine compressor is used as air of the cooling air system and spray air system, wherein a heat exchanger and a boost compressor are arranged downstream of the outlet of compressed air of the gas turbine compressor, and the boost compressor is composed of a parallel connection of a compressor driven by the turbine shaft and ae compressor driven by a driven source other than the turbine shaft, and pressurized air from the boost compressor is used as air for the cooling air system and the spray air system.

公开(公告)号：US20130021013A1

公开(公告)日：2013-01-24

申请号：US13552306

申请日：2012-07-18

申请人： Satoshi Kondou

发明人： Satoshi Kondou

IPC分类号： G05F1/56

CPC分类号： H02M3/33523 ,  H02M1/36 ,  H02M2001/0006 ,  H02M2001/0032 ,  Y02B70/16

摘要： Switching power supply apparatus, which allows steady-state power consumption due to starting current supply circuit to be cut is provided. Comprising a starting current supply circuit which, at turn-on of an input power supply, from a high-voltage power supply provided by input power supply or a high-voltage positive electrode of a switching device, supplies an operating current to a switching control circuit through a switch element comprised of a depression mode FET; and a steady-state current supply circuit which supplies the operating current to the switching control circuit, using a low-voltage power supply provided by a secondary electromotive force of a transformer after start of the switching operation, the apparatus uses the low-voltage power supply to supply a bias voltage to a path of a leakage current flowing from the high-voltage power supply to a grounding terminal through the switch element in the off-state, thereby blocking the leakage current.

摘要翻译： 提供了开关电源装置，其允许由于要切断的启动电流供应电路而导致的稳态功耗。 包括起动电流供应电路，其在由输入电源或开关装置的高电压正电极提供的高电压电源的输入电源的接通时，将供电电流提供给开关控制 电路通过由按压模式FET构成的开关元件; 以及稳定电流供给电路，其在开关动作开始后，使用由变压器的次级电动势提供的低压电源向开关控制电路供给工作电流，该装置使用低压电力 电源将偏压提供给在断开状态下通过开关元件从高压电源流向接地端子的漏电流的路径，从而阻断漏电流。

公开(公告)号：US06383641B1

公开(公告)日：2002-05-07

申请号：US09133379

申请日：1998-08-13

申请人： Satoshi Kondou ,  Toshihiko Higuchi ,  Hirotsugu Yamamoto ,  Takashi Shibuya ,  Mika Yokoyama ,  Junko Asakura

发明人： Satoshi Kondou ,  Toshihiko Higuchi ,  Hirotsugu Yamamoto ,  Takashi Shibuya ,  Mika Yokoyama ,  Junko Asakura

IPC分类号： B32B2736

CPC分类号： C08J7/045 ,  Y10T428/31507 ,  Y10T428/31612 ,  Y10T428/31616 ,  Y10T428/31663

摘要： A transparent coated molded product comprising a transparent synthetic resin substrate and two or more transparent cured material layers provided on at least one part of the surface of the transparent synthetic resin substrate, wherein an inner layer in contact with the outermost layer of the two or more transparent cured material layers is an abrasion-resistant layer which is a cured material of an active energy ray-curable coating agent (A) containing a polyfunctional compounds (a) having at least 2 active energy ray-curable polymerizable functional groups and the outermost layer is a silica layer which is a cured material of a curable coating agent (B) of polysilazane or a curable coating agent (B) containing polysilazane.

摘要翻译： 一种透明涂层模制产品，其包括透明合成树脂基材和设置在所述透明合成树脂基材的表面的至少一部分上的两个或更多个透明固化材料层，其中与所述两个或更多个的最外层接触的内层 透明固化材料层是耐磨层，其是含有具有至少2个活性能量射线固化性可聚合官能团的多官能化合物（a）的活性能量射线固化性涂料（A）的固化物，最外层 是作为聚硅氮烷的固化性涂布剂（B）或含有聚硅​​氮烷的固化性涂布剂（B）的固化物质的二氧化硅层。

公开(公告)号：US08934271B2

公开(公告)日：2015-01-13

申请号：US13329909

申请日：2011-12-19

申请人： Hideyuki Kubota ,  Satoshi Kondou

发明人： Hideyuki Kubota ,  Satoshi Kondou

IPC分类号： H02M1/36

CPC分类号： H02M1/36 ,  Y10S323/901

摘要： A startup circuit includes a MOSFET that is connected between a startup power source and an auxiliary power source made of a smoothing capacitor and passes a startup current from the startup power source to the smoothing capacitor, a JFET that has a drain terminal connected to a drain terminal of the MOSFET and a source terminal connected through a resistor to a gate terminal of the MOSFET, and a pinch-off voltage controller that controls a pinch-off voltage of the JFET to a first reference voltage at startup and to a second reference voltage, which is lower than the first reference voltage, after startup.

摘要翻译： 启动电路包括连接在启动电源和由平滑电容器构成的辅助电源之间并将启动电流从启动电源传递到平滑电容器的MOSFET，JFET，其漏极端子连接到漏极 MOSFET的端子和通过电阻器连接到MOSFET的栅极端子的源极端子以及夹断电压控制器，其将JFET的夹断电压控制为启动时的第一参考电压和第二参考电压 ，低于第一参考电压。

公开(公告)号：US06143437A

公开(公告)日：2000-11-07

申请号：US236334

申请日：1999-01-25

申请人： Satoshi Kondou ,  Yoshitaka Kubota

发明人： Satoshi Kondou ,  Yoshitaka Kubota

IPC分类号： C04B35/48 ,  C04B35/486 ,  C04B35/622 ,  C23C14/08 ,  C23C14/24 ,  B32B7/00

CPC分类号： C23C14/083 ,  C04B35/486 ,  C04B35/62222 ,  Y02T50/67

摘要： A vapor deposition material which is a molded body composed of powdery zirconia and a stabilizer, the molded body having a fine structure constituted of a mixture of granules of zirconia particles and non-granulated particles; granules of particle diameter ranging from 20 to 300 .mu.m constitute 20 to 90% of the molded body; the granules of the zirconia particles containing substantially no stabilizer, and being constituted of crystals of a monoclinic phase and a cubic phase with a ratio of the monoclinic phase of 70% or higher; and the particles constituting the granules having an average particle diameter from 0.5 to 15 .mu.m. A process for vapor deposition which employs the above vapor deposition material, and further a member is provided of a base article coated directly, or with interposition of a third film, with a thin zirconia film. The vapor deposition coating material has improved thermal shock resistance on EB irradiation, not causing abrupt boiling of molten matter formed by EB irradiation, being capable of forming stable melt pool, and having a stable evaporation rate.

摘要翻译： 作为由粉末状氧化锆和稳定剂构成的成型体的蒸镀材料，该成型体具有由氧化锆粒子和非造粒粒子的混合物构成的微细结构， 颗粒直径20〜300μm的颗粒构成成型体的20〜90％ 所述氧化锆颗粒的颗粒基本上不含稳定剂，并且由单斜相和立方相的晶体构成，所述单斜相的比率为70％以上; 构成颗粒的颗粒的平均粒径为0.5〜15μm。 一种采用上述蒸镀材料的蒸镀方法，其特征在于，由直接涂布或搭载有第三薄膜的基材制成薄型氧化锆薄膜。 蒸镀层材料在EB照射下具有改善的耐热冲击性，不会导致由EB照射形成的熔融物质的突然沸腾，能够形成稳定的熔池，并且具有稳定的蒸发速率。

公开(公告)号：US06986256B2

公开(公告)日：2006-01-17

申请号：US10768159

申请日：2004-02-02

申请人： Kazunori Yamanaka ,  Satoshi Kondou ,  Masami Noda

发明人： Kazunori Yamanaka ,  Satoshi Kondou ,  Masami Noda

IPC分类号： F02C6/08 ,  F02C7/18

CPC分类号： F02C7/18 ,  F02C3/10 ,  F02C7/143 ,  F02C7/185 ,  F02C7/2365

摘要： A gas turbine has a cooling air system supplying air for cooling a high temperature part of the gas turbine and a spray air system supplying air for spraying fuel into a combustor and is formed so that a part of high-pressure air compressed by a gas turbine compressor is used as air of the cooling air system and spray air system, wherein a heat exchanger and a boost compressor are arranged downstream of the outlet of compressed air of the gas turbine compressor, and the boost compressor is composed of a parallel connection of a compressor driven by the turbine shaft and ae compressor driven by a driven source other than the turbine shaft, and pressurized air from the boost compressor is used as air for the cooling air system and the spray air system.