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公开(公告)号：US20250169114A1
公开(公告)日：2025-05-22
申请号：US19023954
申请日：2025-01-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI
IPC: H10D30/67 , H01L23/522 , H01L23/544
Abstract: A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.
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公开(公告)号：US20250164815A1
公开(公告)日：2025-05-22
申请号：US18728952
申请日：2023-01-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Daiki NAKAMURA , Hisao IKEDA , Ryo HATSUMI , Takeya HIROSE
Abstract: An electronic device that allows the user to visually recognize an image with high quality is provided. The electronic device includes a first display device (41), a second display device (44a), a third display device (44b), an optical combiner (38), and a lens (35). The first, second, and third display devices include a first, a second, and a third display portion (33, 37a, and 37b), respectively. A first, a second, and a third pixel (23, 27a, and 27b) are placed in the first, second, and third display portions, respectively. The optical combiner includes a first surface and a second surface on the opposite side of the first surface. The first display device (41) and the lens (35) are provided on the first surface side, and the second display device (44a) and the third display device (44b) are provided on the second surface side. The second display device (44a) overlaps with the third display device (44b). The third display portion (37b) is provided to surround at least part of the second display portion (37a) in a plan view. The area per first pixel (23) and the area per second pixel (27a) are smaller than the area per third pixel (27b).
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公开(公告)号：US20250160004A1
公开(公告)日：2025-05-15
申请号：US19024240
申请日：2025-01-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Masashi TSUBUKU
Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.
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公开(公告)号：US20250159941A1
公开(公告)日：2025-05-15
申请号：US19023764
申请日：2025-01-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Junichi KOEZUKA , Masami JINTYOU , Yukinori SHIMA
Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.
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公开(公告)号：US20250159939A1
公开(公告)日：2025-05-15
申请号：US19020084
申请日：2025-01-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
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Patent Agency Ranking
公开(公告)号：US20250159938A1
公开(公告)日：2025-05-15
申请号：US19019828
申请日：2025-01-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Hideomi SUZAWA
Abstract: A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.
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公开(公告)号：US20250159855A1
公开(公告)日：2025-05-15
申请号：US18928345
申请日：2024-10-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takeya HIROSE , Takanori MATSUZAKI
IPC: H10B10/00 , G11C11/419
Abstract: A novel semiconductor device is provided. One of a source and a drain of a first transistor is connected to one terminal of a first capacitor; the other of the source and the drain of the first transistor is connected to a bit line; a gate of the first transistor is connected to a word line; the other terminal of the first capacitor is connected to a first driver circuit; the first driver circuit is configured to output a first potential, output a second potential in conjunction with a timing when a potential of a selection signal that is supplied to the word line changes, and output a third potential in conjunction with a timing when a potential of data that is supplied to the bit line changes; a direction of change from the first potential to the second potential is opposite to a direction in which the potential of the selection signal changes; and a direction of change from the first potential to the third potential is opposite to a direction in which the potential of the data changes.
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公开(公告)号：US20250157555A1
公开(公告)日：2025-05-15
申请号：US19020034
申请日：2025-01-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Atsushi UMEZAKI
Abstract: A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.
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公开(公告)号：US20250156620A1
公开(公告)日：2025-05-15
申请号：US19019971
申请日：2025-01-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Teppei OGUNI , Takeshi OSADA , Takahiro FUKUTOME
IPC: G06F30/367 , G06N3/042 , G06N3/08
Abstract: A parameter candidate for a semiconductor element is provided. A data set of measurement data is provided to a parameter extraction portion, and a model parameter is extracted. A first netlist is provided to a circuit simulator, simulation is performed using the first netlist and the model parameter, and a first output result is output. A classification model learns the model parameter and the first output result and classifies the model parameter. A second netlist and a model parameter are provided to the circuit simulator. A variable to be adjusted is supplied to a neural network, an action value function is output, and the variable is updated. The circuit simulator performs simulation using the second netlist and the model parameter. When a second output result to be output does not satisfy conditions, a weight coefficient of the neural network is updated. When the second output result satisfies the conditions, the variable is judged to be the best candidate.
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公开(公告)号：US12300794B2
公开(公告)日：2025-05-13
申请号：US18596899
申请日：2024-03-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shuhei Nagatsuka , Akihiro Kimura
Abstract: An electric power charge and discharge system for an electronic device having a battery, by which the electronic device can be used for a long period of time. In a wireless communication device including a wireless driving portion including a first battery and a wireless charging portion including a second battery, the first battery is charged by electric power from a fixed power supply and the second battery is charged by using electromagnetic waves existing in an external space. Further, the first battery and the second battery are discharged alternately, and during a period in which the first battery is discharged, the second battery is charged.
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