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    Methods for programming user data and confirmation information in nonvolatile memory devices
    3.
    发明申请
    Methods for programming user data and confirmation information in nonvolatile memory devices 有权
    用于在非易失性存储器件中编程用户数据和确认信息的方法

    公开(公告)号：US20060062049A1

    公开(公告)日：2006-03-23

    申请号：US11009125

    申请日：2004-12-10

    申请人： Seok-Heon Lee ,  Young-Joon Choi ,  Tae-Gyun Kim

    发明人： Seok-Heon Lee ,  Young-Joon Choi ,  Tae-Gyun Kim

    IPC分类号： G11C16/04 ,  G11C11/34

    CPC分类号： G11C16/225

    摘要： Method of programming nonvolatile memory devices are provided in which data is programmed into a first plurality of memory cells of the nonvolatile memory device. At the same time associated programming confirmation information is programmed into at least one second memory cell of the nonvolatile memory device. Then, a determination is made as to whether the data was correctly programmed into the first plurality of memory cells based on an evaluation of (1) the threshold voltage distributions of at least some of the first plurality of memory cells and (2) the threshold voltage distribution of the at least one second memory cell. Methods of resuming a data programming operation after an interruption such as a loss of power are also provided.

    摘要翻译： 提供了非易失性存储器件的编程方法，其中将数据编程到非易失性存储器件的第一多个存储单元中。 同时，相关联的编程确认信息被编程到非易失性存储器件的至少一个第二存储单元中。 然后，基于（1）第一多个存储单元中的至少一些的阈值电压分布和（2）阈值的评估，确定数据是否被正确地编程到第一多个存储单元中 至少一个第二存储单元的电压分布。 还提供了在诸如功率损失的中断之后恢复数据编程操作的方法。

    Non-volatile semiconductor memory device and multi-block erase method thereof
    6.
    发明授权
    Non-volatile semiconductor memory device and multi-block erase method thereof 有权
    非易失性半导体存储器件及其多块擦除方法

    公开(公告)号：US07110301B2

    公开(公告)日：2006-09-19

    申请号：US10982247

    申请日：2004-11-03

    申请人： Seok-Heon Lee ,  Young-Joon Choi ,  Tae-Gyun Kim ,  Dae-Sik Park ,  Jin-Yub Lee

    发明人： Seok-Heon Lee ,  Young-Joon Choi ,  Tae-Gyun Kim ,  Dae-Sik Park ,  Jin-Yub Lee

    IPC分类号： G11C11/34

    CPC分类号： G11C16/16 ,  G11C16/344 ,  G11C16/3445 ,  G11C2216/18 ,  G11C2216/20

    摘要： A non-volatile semiconductor memory device includes memory blocks and an erase controller configured to control a multi-block erase operation where at least two of the memory blocks are simultaneously erased. According to some embodiments, after selecting and simultaneously erasing the selected memory blocks, an erase verify operation for each of the erased memory blocks is performed according to an externally provided erase verify command and block address. According to some embodiments, if a suspend command is received by the memory device while selected memory blocks are being erased, the erase operation ceases and another operation, such as a read operation, begins. When a resume command is received by the memory device, the erase operation resumes. Other embodiments are described and claimed.

    摘要翻译： 非挥发性半导体存储器件包括存储器块和擦除控制器，其被配置为控制多块擦除操作，其中至少两个存储块被同时擦除。 根据一些实施例，在选择并同时擦除所选择的存储块之后，根据外部提供的擦除验证命令和块地址执行针对每个被擦除的存储器块的擦除验证操作。 根据一些实施例，如果在擦除所选择的存储器块期间由存储器件接收到暂停命令，则擦除操作停止，并且开始诸如读取操作的另一操作。 当存储器件接收到恢复命令时，擦除操作恢复。 描述和要求保护其他实施例。

    Non-volatile semiconductor memory device and multi-block erase method thereof
    7.
    发明申请
    Non-volatile semiconductor memory device and multi-block erase method thereof 有权
    非易失性半导体存储器件及其多块擦除方法

    公开(公告)号：US20050248993A1

    公开(公告)日：2005-11-10

    申请号：US10982247

    申请日：2004-11-03

    申请人： Seok-Heon Lee ,  Young-Joon Choi ,  Tae-Gyun Kim ,  Dae-Sik Park ,  Jin-Yub Lee

    发明人： Seok-Heon Lee ,  Young-Joon Choi ,  Tae-Gyun Kim ,  Dae-Sik Park ,  Jin-Yub Lee

    IPC分类号： G11C16/14 ,  G11C16/06 ,  G11C16/16 ,  G11C16/34 ,  G11C16/04

    CPC分类号： G11C16/16 ,  G11C16/344 ,  G11C16/3445 ,  G11C2216/18 ,  G11C2216/20

    摘要： A non-volatile semiconductor memory device includes memory blocks and an erase controller configured to control a multi-block erase operation where at least two of the memory blocks are simultaneously erased. According to some embodiments, after selecting and simultaneously erasing the selected memory blocks, an erase verify operation for each of the erased memory blocks is performed according to an externally provided erase verify command and block address. According to some embodiments, if a suspend command is received by the memory device while selected memory blocks are being erased, the erase operation ceases and another operation, such as a read operation, begins. When a resume command is received by the memory device, the erase operation resumes. Other embodiments are described and claimed.

    摘要翻译： 非挥发性半导体存储器件包括存储器块和擦除控制器，其被配置为控制多块擦除操作，其中至少两个存储块被同时擦除。 根据一些实施例，在选择并同时擦除所选择的存储块之后，根据外部提供的擦除验证命令和块地址执行针对每个被擦除的存储器块的擦除验证操作。 根据一些实施例，如果在擦除所选择的存储器块期间由存储器件接收到暂停命令，则擦除操作停止，并且开始诸如读取操作的另一操作。 当存储器件接收到恢复命令时，擦除操作恢复。 描述和要求保护其他实施例。

    Method and apparatus for enhanced photocatalytic oxidative decolorization of wastewater containing reactive anthraquinone dye
    9.
    发明授权
    Method and apparatus for enhanced photocatalytic oxidative decolorization of wastewater containing reactive anthraquinone dye 有权
    用于增强含有反应性蒽醌染料的废水的光催化氧化脱色方法和装置

    公开(公告)号：US09045360B2

    公开(公告)日：2015-06-02

    申请号：US13029707

    申请日：2011-02-17

    申请人： Young Haeng Lee ,  Seok Heon Lee ,  Taek June Lee

    发明人： Young Haeng Lee ,  Seok Heon Lee ,  Taek June Lee

    IPC分类号： C02F1/72 ,  B01J19/12 ,  C02F1/32 ,  C02F103/14

    CPC分类号： C02F1/725 ,  C02F1/32 ,  C02F2103/14 ,  C02F2209/05 ,  C02F2209/06 ,  Y02W10/37

    摘要： Disclosed are a method and apparatus for decolorization of reactive anthraquinone dye-containing wastewater using photocatalytic oxidation, which include inducing high-efficiency photocatalytic oxidation under a controlled salt concentration and pH of wastewater to perform effective decolorization of reactive anthraquinone dye-containing wastewater. The method for decolorization of reactive anthraquinone dye-containing wastewater using photocatalytic oxidation, includes: introducing a photocatalyst and salt into reactive anthraquinone dye-containing wastewater and adjusting pH of the wastewater to a level higher than neutral pH; and irradiating UV to the photocatalyst to carry out cleavage of the reactive anthraquinone dyes through photocatalytic oxidation, thereby accomplishing decolorization of wastewater.

    摘要翻译： 公开了一种使用光催化氧化对含活性蒽醌染料的废水进行脱色的方法和装置，其包括在受控盐浓度和废水pH值下诱导高效光催化氧化，以对含活性蒽醌染料的废水进行有效脱色。 使用光催化氧化对含活性蒽醌染料的废水进行脱色的方法包括：将光催化剂和盐引入反应性含蒽醌染料的废水中，并将废水的pH调节至高于中性pH的水平; 并向光催化剂照射UV，通过光催化氧化进行反应性蒽醌染料的裂解，从而实现废水的脱色。

    METHOD AND APPARATUS FOR ENHANCED PHOTOCATALYTIC OXIDATIVE DECOLORIZATION OF WASTEWATER CONTAINING REACTIVE ANTHRAQUINONE DYE
    10.
    发明申请
    METHOD AND APPARATUS FOR ENHANCED PHOTOCATALYTIC OXIDATIVE DECOLORIZATION OF WASTEWATER CONTAINING REACTIVE ANTHRAQUINONE DYE 有权
    含有反应性蒽醌染料的废水增强光催化氧化脱色方法与装置

    公开(公告)号：US20120118833A1

    公开(公告)日：2012-05-17

    申请号：US13029707

    申请日：2011-02-17

    申请人： Young Haeng LEE ,  Seok Heon LEE ,  Taek June LEE

    发明人： Young Haeng LEE ,  Seok Heon LEE ,  Taek June LEE

    IPC分类号： C02F1/72 ,  B01J19/12

    CPC分类号： C02F1/725 ,  C02F1/32 ,  C02F2103/14 ,  C02F2209/05 ,  C02F2209/06 ,  Y02W10/37

    摘要： Disclosed are a method and apparatus for decolorization of reactive anthraquinone dye-containing wastewater using photocatalytic oxidation, which include inducing high-efficiency photocatalytic oxidation under a controlled salt concentration and pH of wastewater to perform effective decolorization of reactive anthraquinone dye-containing wastewater. The method for decolorization of reactive anthraquinone dye-containing wastewater using photocatalytic oxidation, includes: introducing a photocatalyst and salt into reactive anthraquinone dye-containing wastewater and adjusting pH of the wastewater to a level higher than neutral pH; and irradiating UV to the photocatalyst to carry out cleavage of the reactive anthraquinone dyes through photocatalytic oxidation, thereby accomplishing decolorization of wastewater.

    摘要翻译： 公开了一种使用光催化氧化对含活性蒽醌染料的废水进行脱色的方法和装置，其包括在受控盐浓度和废水pH值下诱导高效光催化氧化，以对含活性蒽醌染料的废水进行有效脱色。 使用光催化氧化对含活性蒽醌染料的废水进行脱色的方法包括：将光催化剂和盐引入反应性含蒽醌染料的废水中，并将废水的pH调节至高于中性pH的水平; 并向光催化剂照射UV，通过光催化氧化进行反应性蒽醌染料的裂解，从而实现废水的脱色。