摘要:
A method for fabricating a semiconductor device is disclosed. In a high speed device structure consisting of a salicide, in order to fabricate a device having at least two gate oxide structures in the identical chip, an LDD region of a core device region is formed, and an ion implant process for forming the LDD region of an input/output device region having a thick gate oxide and a process for forming a source/drain region at the rim of a field oxide of the core device region having a thin gate oxide are performed at the same time, thereby increasing a depth of a junction region. Thus, the junction leakage current is decreased in the junction region of the peripheral circuit region, and the process is simplified. As a result, a process yield and reliability of the device are improved.
摘要:
Forming a semiconductor transistor by embedding the gate electrode into the substrate so that a step difference between the gate electrode and the source or drain region is reduced. Device isolation areas are defined by forming at least two first trenches having a first depth. The gate electrode is formed in a second trench located between the first trenches at a second depth being less than the first depth. A source and a drain are respectively formed between the gate electrode and the device isolation areas. The gate electrically connects the source and drain to form a semiconductor channel in the substrate.
摘要:
A method of fabricating a semiconductor device is disclosed in the present invention. The method includes the steps of forming first and second wells in the substrate, the first and second wells having first and second type conductivities, respectively, forming first, second, and third isolation layers in the substrate, forming first and second gate oxide layers on the first and second wells, forming first and second buried contact regions in the substrate, and forming first and second impurity regions in the first and second buried contact regions, and forming first and second gates on the first well and third and fourth gates on the second well, the first and fourth gates directly contacting the first and second buried contact regions, respectively.
摘要:
Provided are a pixel, a pixel array, an image sensor including the pixel array, and a method of driving the pixel array. The pixel includes a photoelectric converter, a capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The switching element outputs a potential of the capacitor. The switching element includes a transfer switching element transferring the electric charges, converted in the photoelectric converter, to the capacitor. The capacitor serves as a storage through multi-clocking of the transfer switching element.
摘要:
Disclosed are a pixel array, an image sensor including the same, and a method of driving the same. In a WDR (Wide Dynamic Range) pixel employing a storage region (FD node) including a varactor, a reset voltage, which is less than a voltage applied to a reset transistor according to the related art, that is, a partial reset voltage is applied to the reset transistor to read out a reset signal level for a CDS (Correlated Double Sampling) operation, thereby adjusting the operating voltage range of the storage region. The operating voltage range of the storage region is shifted into a range suitable for remarkably varying the capacitance of the varactor, thereby expanding the dynamic range.
摘要:
Disclosed are a pixel array, an image sensor including the same, and a method of driving the same. In a WDR (Wide Dynamic Range) pixel employing a storage region (FD node) including a varactor, a reset voltage, which is less than a voltage applied to a reset transistor according to the related art, that is, a partial reset voltage is applied to the reset transistor to read out a reset signal level for a CDS (Correlated Double Sampling) operation, thereby adjusting the operating voltage range of the storage region. The operating voltage range of the storage region is shifted into a range suitable for remarkably varying the capacitance of the varactor, thereby expanding the dynamic range.
摘要:
Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a capacitor for storing charges converted by the photo-electro conversion unit; an output switching device for outputting an electric potential of the capacitor; and a removal unit for removing a part of the charges converted by the photo-electro conversion unit.
摘要:
Provided are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a photoelectric converter, a capacitor, a variable capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The variable capacitor is connected to the capacitor, and has capacitance varied according to a potential of the capacitor. The switching element outputs the potential of the capacitor.
摘要:
Provided are a pixel, a pixel array, an image sensor including the pixel array, and a method of driving the pixel array. The pixel includes a photoelectric converter, a capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The switching element outputs a potential of the capacitor. The switching element includes a transfer switching element transferring the electric charges, converted in the photoelectric converter, to the capacitor. The capacitor serves as a storage through multi-clocking of the transfer switching element.
摘要:
Provided are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a photoelectric converter, a capacitor, a variable capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The variable capacitor is connected to the capacitor, and has capacitance varied according to a potential of the capacitor. The switching element outputs the potential of the capacitor.