Complementary metal-oxide semiconductor (CMOS) image sensor
    1.
    发明授权
    Complementary metal-oxide semiconductor (CMOS) image sensor 有权
    互补金属氧化物半导体(CMOS)图像传感器

    公开(公告)号:US08149311B2

    公开(公告)日:2012-04-03

    申请号:US11321557

    申请日:2005-12-28

    Applicant: Seong-Han Yu

    Inventor: Seong-Han Yu

    CPC classification number: H04N5/3745 H04N5/355 H04N5/3698 H04N5/374

    Abstract: A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.

    Abstract translation: CMOS图像传感器包括由高电压控制的单位像素; 用于产生参考高电压的参考高压发生器; 以及高电压输出单元,用于通过使用参考高电压作为工作电压产生高电压,从而将高电压输出到单位像素,其中高电压的电平被稳定地保持,而与参考高度的变化无关 电压电平。

    COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR
    2.
    发明申请
    COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR 有权
    补充金属氧化物半导体(CMOS)图像传感器

    公开(公告)号:US20100194957A1

    公开(公告)日:2010-08-05

    申请号:US12764727

    申请日:2010-04-21

    Applicant: Seong-Han Yu

    Inventor: Seong-Han Yu

    CPC classification number: H04N5/3745 H04N5/355 H04N5/3698 H04N5/374

    Abstract: A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.

    Abstract translation: CMOS图像传感器包括由高电压控制的单位像素; 用于产生参考高电压的参考高压发生器; 以及高电压输出单元,用于通过使用参考高电压作为工作电压产生高电压,从而将高电压输出到单位像素,其中高电压的电平被稳定地保持,而与参考高度的变化无关 电压电平。

    CMOS image sensor
    3.
    发明申请
    CMOS image sensor 有权
    CMOS图像传感器

    公开(公告)号:US20070146517A1

    公开(公告)日:2007-06-28

    申请号:US11321557

    申请日:2005-12-28

    Applicant: Seong-Han Yu

    Inventor: Seong-Han Yu

    CPC classification number: H04N5/3745 H04N5/355 H04N5/3698 H04N5/374

    Abstract: A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level.

    Abstract translation: CMOS图像传感器包括由高电压控制的单位像素; 用于产生参考高电压的参考高压发生器; 以及高电压输出单元,用于通过使用参考高电压作为工作电压产生高电压,从而将高电压输出到单位像素,其中高电压的电平被稳定地保持,而与参考高度的变化无关 电压电平。

    Optical alignment composition, alignment layer formed using the same and
LCD having the alignment layer
    7.
    发明授权
    Optical alignment composition, alignment layer formed using the same and LCD having the alignment layer 失效
    光学取向组合物,使用其形成的取向层和具有取向层的LCD

    公开(公告)号:US06066696A

    公开(公告)日:2000-05-23

    申请号:US987769

    申请日:1997-12-09

    CPC classification number: G02F1/133723 C08L79/08 G02F1/133788

    Abstract: An optical alignment composition including a first polymer selected from a cinnamate-series polymer and a coumarin-series polymer, and a second polymer selected from polyimide having a long-chain alkyl group at its side chains and polyimide having an alkyl group at its both ends, an alignment layer formed using the same, and a liquid crystal display having the alignment layer are provided. According to the present invention, the thermal stability of the alignment layer and pretilt angle characteristic of the liquid crystal are improved.

    Abstract translation: 一种光学取向组合物,其包含选自肉桂酸酯系聚合物和香豆素系聚合物的第一聚合物和选自其侧链具有长链烷基的聚酰亚胺和其两端具有烷基的聚酰亚胺的第二聚合物 ,使用其形成的取向膜,以及具有取向层的液晶显示器。 根据本发明,提高了取向层的热稳定性和液晶的预倾角特性。

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