公开(公告)号：US6034439A

公开(公告)日：2000-03-07

申请号：US41020

申请日：1998-03-12

申请人： Kuo-Shi Teng ,  Hao-Chieh Yung ,  Shing-Shing Chiang ,  Wen-Haw Lu

发明人： Kuo-Shi Teng ,  Hao-Chieh Yung ,  Shing-Shing Chiang ,  Wen-Haw Lu

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014

摘要： A method for preventing bonding pads from peeling caused by plug process comprises the following steps. First, a substrate is prepared, and then a first conductor is formed on the substrate. Next, a dielectric layer is formed on the first conductor. After that, a big contact window and a plurality of small contact windows are formed on the dielectric layer, wherein the plurality of small contact windows are located around the big window, and the sizes of the big contact window and small contact windows are over 3 .mu.m. Subsequently, a metal plug layer is formed on the dielectric layer, big contact window and small contact windows. Thereafter, the metal plug layer is etched back to form metal spacers on the sidewalls of the big contact window and small contact windows. Finally, a second conductor is formed on the dielectric layer, big contact window, small contact windows and metal spacers. Since the second conductor is directly connected to the first conductor in the invention, bonding pads peeling can be thoroughly prevented during connecting between the bonding pads and outside pins.

摘要翻译： 用于防止由焊接过程引起的焊盘剥离的方法包括以下步骤。 首先，准备基板，然后在基板上形成第一导体。 接下来，在第一导体上形成电介质层。 之后，在电介质层上形成大的接触窗和多个小接触窗，其中多个小接触窗位于大窗周围，大接触窗和小接触窗的尺寸超过3 亩 随后，在电介质层，大接触窗和小接触窗上形成金属塞层。 此后，金属插塞层被回蚀以在大接触窗的侧壁和小的接触窗口上形成金属间隔物。 最后，在电介质层，大接触窗，小接触窗和金属间隔物上形成第二导体。 由于在本发明中第二导体直接连接到第一导体，因此在连接焊盘和外部引脚之间可以彻底地防止焊盘剥离。

公开(公告)号：US5739047A

公开(公告)日：1998-04-14

申请号：US691313

申请日：1996-08-02

申请人： Shing-Shing Chiang

发明人： Shing-Shing Chiang

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76877

摘要： A method of fabricating a IC electrical plug, which removes an overhang to prevent formation of voids inside the plug. A transistor with a gate and source/drain terminals is formed on a silicon substrate. A dielectric layer is formed above the silicon substrate. A portion of the dielectric layer is removed by etching to form a contact window, exposing the source region, the drain region, or another conductive material region. A first diffusion barrier layer is formed at the bottom and on the sidewalls of the contact window, and on the top surface of the dielectric layer, overhanging the contact window. A photoresist layer is coated over the substrate filling up the contact window and covering the surface of first diffusion barrier layer. An isotropic etching process is performed to etch away portions of the photoresist layer and the first diffusion barrier layer, exposing the surface of dielectric layer, and leaving the height of the aforementioned layers inside the contact window below the top surface of the dielectric layer. The remaining photoresist layer inside the contact window is removed. A second diffusion barrier layer is formed on the exposed upper sidewalls of the contact window, extending to cover the top surface of the dielectric layer as well. A layer of conductive material filling up the contact window then forms the electrical plug.

摘要翻译： 一种制造IC电插头的方法，其移除突出端以防止在插塞内形成空隙。 具有栅极和源极/漏极端子的晶体管形成在硅衬底上。 在硅衬底之上形成电介质层。 通过蚀刻去除介电层的一部分以形成接触窗口，暴露源极区域，漏极区域或另一导电材料区域。 第一扩散阻挡层形成在接触窗的底部和侧壁上，并且在电介质层的顶表面上突出接触窗。 将光致抗蚀剂层涂覆在填充接触窗口并覆盖第一扩散阻挡层的表面的基板上。 执行各向同性蚀刻处理以蚀刻掉光致抗蚀剂层和第一扩散阻挡层的部分，暴露电介质层的表面，并且将接触窗口内的上述层的高度留在电介质层的顶表面下方。 去除接触窗内的剩余光致抗蚀剂层。 第二扩散阻挡层形成在接触窗的暴露的上侧壁上，并延伸以覆盖电介质层的顶表面。 填充接触窗口的导电材料层然后形成电插头。

公开(公告)号：US6083802A

公开(公告)日：2000-07-04

申请号：US223840

申请日：1998-12-31

申请人： Wen Ying Wen ,  Shing Shing Chiang

发明人： Wen Ying Wen ,  Shing Shing Chiang

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L27/08 ,  H01L21/20

CPC分类号： H01L28/10 ,  H01L27/0617 ,  H01L27/08

摘要： A method for forming an inductor in a semiconductor substrate having a trench therein including the steps of forming a first metal portion in the trench, providing a flowable dielectric material in the trench, depositing a layer of dielectric material over the layer of first metal portion and flowable dielectric material, forming a plug in the layer of dielectric material wherein the plug is in electrical contact with the first metal portion, and forming a second metal portion over the layer of dielectric material wherein the second metal portion is in electrical contact with the plug.

摘要翻译： 一种在其中具有沟槽的半导体衬底中形成电感器的方法，包括在沟槽中形成第一金属部分的步骤，在沟槽中提供可流动的电介质材料，在第一金属部分的层上沉积介电材料层， 在所述电介质材料层中形成插塞，其中所述插塞与所述第一金属部分电接触，以及在所述电介质材料层上形成第二金属部分，其中所述第二金属部分与所述插头电接触 。