公开(公告)号：US20130037901A1

公开(公告)日：2013-02-14

申请号：US13643499

申请日：2011-04-22

Applicant: Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

Inventor： Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

IPC: H01L31/0224

CPC classification number: H01L27/142 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0384 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract translation: 本发明的目的是提供一种具有高光电转换效率的光电转换装置，其通过增加光吸收层和电极层之间的接触力来提高可靠性。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层含有化合物半导体。 光吸收层包括靠近电极层的第一层和位于第一层上的第二层。 第一层具有低于第二层的空隙率。

公开(公告)号：US09484476B2

公开(公告)日：2016-11-01

申请号：US14007897

申请日：2012-03-15

Applicant: Shintaro Kubo ,  Michimasa Kikuchi ,  Hideaki Asao ,  Shinnosuke Ushio

Inventor： Shintaro Kubo ,  Michimasa Kikuchi ,  Hideaki Asao ,  Shinnosuke Ushio

IPC: H01L31/032 ,  H01L31/0368 ,  H01L31/0749 ,  H01L31/046

CPC classification number: H01L31/0322 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543

Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.

Abstract translation: 本发明的目的是提高光电转换装置的光电转换效率。 根据本发明的光电转换装置使用包括耦合在一起的多个半导体颗粒作为光吸收层的多晶半导体层，每个半导体颗粒包括I-III-VI族化合物，每个半导体颗粒具有 IB族元素与III-B族元素在表面部分中的组成比PI高于其中央部分。

公开(公告)号：US20140014177A1

公开(公告)日：2014-01-16

申请号：US14007897

申请日：2012-03-15

Applicant: Shintaro Kubo ,  Michimasa Kikuchi ,  Hideaki Asao ,  Shinnosuke Ushio

Inventor： Shintaro Kubo ,  Michimasa Kikuchi ,  Hideaki Asao ,  Shinnosuke Ushio

IPC: H01L31/032

CPC classification number: H01L31/0322 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543

Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.

Abstract translation: 本发明的目的是提高光电转换装置的光电转换效率。 根据本发明的光电转换装置使用包括耦合在一起的多个半导体颗粒作为光吸收层的多晶半导体层，每个半导体颗粒包括I-III-VI族化合物，每个半导体颗粒具有 IB族元素与III-B族元素在表面部分中的组成比PI高于其中央部分。

公开(公告)号：US20130240948A1

公开(公告)日：2013-09-19

申请号：US13988391

申请日：2011-11-18

Applicant: Shinnosuke Ushio

Inventor： Shinnosuke Ushio

IPC: H01L31/032

CPC classification number: H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541

Abstract: The present invention aims to improve the conversion efficiency in a photoelectric conversion device.A photoelectric conversion device comprises an electrode, a first semiconductor layer containing a Group I-III-VI compound semiconductor and located on the electrode, and a second semiconductor layer having a conductivity type different from that of the first semiconductor layer and located on the first semiconductor layer, wherein, in the first semiconductor layer, a ratio CVI/CI of the content CVI of a Group VI-B element to the content CI of a Group I-B element in a surface part of the second semiconductor layer side thereof is larger than the ratio CVI/CI in a rest part of the electrode side thereof.

Abstract translation: 本发明旨在提高光电转换装置的转换效率。 光电转换装置包括电极，含有I-III-VI族化合物半导体并位于电极上的第一半导体层，以及第二半导体层，其导电类型与第一半导体层的导电类型不同，位于第一 半导体层，其中，在第一半导体层中，第VI-B族元素的含量CVI与第IB族元素在第二半导体层侧的表面部分的含量CI的比率CVI / CI大于 其电极侧的其余部分中的CVI / CI的比率。

公开(公告)号：US08916905B2

公开(公告)日：2014-12-23

申请号：US13643499

申请日：2011-04-22

Applicant: Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

Inventor： Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

IPC: H01L31/107 ,  H01L31/0384 ,  H01L21/02 ,  H01L27/142 ,  H01L31/032 ,  H01L31/0749 ,  H01L25/00

CPC classification number: H01L27/142 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0384 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract translation: 本发明的目的是提供一种具有高光电转换效率的光电转换装置，其通过增加光吸收层和电极层之间的接触力来提高可靠性。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层含有化合物半导体。 光吸收层包括靠近电极层的第一层和位于第一层上的第二层。 第一层具有低于第二层的空隙率。