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    Semiconductor integrated circuit apparatus
    1.
    发明授权
    Semiconductor integrated circuit apparatus 有权

    公开(公告)号：US07358793B2

    公开(公告)日：2008-04-15

    申请号：US11349092

    申请日：2006-02-08

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation.The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

    Semiconductor integrated circuit apparatus
    2.
    发明申请
    Semiconductor integrated circuit apparatus 有权

    公开(公告)号：US20070132504A1

    公开(公告)日：2007-06-14

    申请号：US11702132

    申请日：2007-02-05

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

    Semiconductor integrated circuit apparatus
    4.
    发明申请
    Semiconductor integrated circuit apparatus 有权

    公开(公告)号：US20080088357A1

    公开(公告)日：2008-04-17

    申请号：US11987709

    申请日：2007-12-04

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

    Semiconductor integrated circuit apparatus which is capable of controlling a substrate voltage under the low source voltage driving of a miniaturized MOSFET
    7.
    发明授权
    Semiconductor integrated circuit apparatus which is capable of controlling a substrate voltage under the low source voltage driving of a miniaturized MOSFET 有权
    半导体集成电路装置，其能够在小型化的MOSFET的低电源电压驱动下控制衬底电压

    公开(公告)号：US07999603B2

    公开(公告)日：2011-08-16

    申请号：US12686283

    申请日：2010-01-12

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： Provided is a semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation thereof. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to ground, and the substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

    摘要翻译： 提供一种半导体集成电路装置，其能够控制MOSFET的衬底电压，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高稳定性 操作。 半导体集成电路装置包括：在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。 监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子 的监视MOSFET和连接到地的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监视MOSFET的衬底电压的输出电压输出反馈。

    Semiconductor integrated circuit apparatus
    8.
    发明授权
    Semiconductor integrated circuit apparatus 有权
    半导体集成电路装置

    公开(公告)号：US07429887B2

    公开(公告)日：2008-09-30

    申请号：US11540692

    申请日：2006-10-02

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

    摘要翻译： 提供能够控制MOSFET的衬底电压的半导体集成电路装置，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。 半导体集成电路装置包括：在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。 监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子 的监视MOSFET和连接到地电位的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监控MOSFET的基板电压反馈输出电压输出。

    Semiconductor integrated circuit apparatus
    9.
    发明授权
    Semiconductor integrated circuit apparatus 有权
    半导体集成电路装置

    公开(公告)号：US07365590B2

    公开(公告)日：2008-04-29

    申请号：US11540757

    申请日：2006-10-02

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： A semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so hat the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and the substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

    摘要翻译： 能够控制MOSFET的衬底电压的半导体集成电路装置，以使得在亚阈值区域或饱和区域中的任意栅极电压值的漏极电流不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。 半导体集成电路装置包括在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。 监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子 的监视MOSFET和连接到地电位的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监视MOSFET的衬底电压反馈输出电压输出。

    Semiconductor integrated circuit apparatus
    10.
    发明申请
    Semiconductor integrated circuit apparatus 审中-公开

    公开(公告)号：US20070024342A1

    公开(公告)日：2007-02-01

    申请号：US11540582

    申请日：2006-10-02

    申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

    IPC分类号： H03K3/01

    CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

    摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.