公开(公告)号：US07142576B2

公开(公告)日：2006-11-28

申请号：US11198089

申请日：2005-08-05

申请人： Tetsuo Ueda ,  Keiji Yamane ,  Isao Kidoguchi ,  Shoji Fujimori

发明人： Tetsuo Ueda ,  Keiji Yamane ,  Isao Kidoguchi ,  Shoji Fujimori

IPC分类号： H01S5/00

CPC分类号： H01S5/028

摘要： A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

摘要翻译： 半导体激光器包括形成在基板上的有源层和夹着有源层的一对包覆层。 在半导体激光器的至少一个谐振器端面上，提供了其中添加有氢的第一电介质膜。 在第一电介质膜和谐振器端面之间，提供了用于抑制氢的扩散的第二电介质膜。 即使当具有包含加氢膜的端面涂膜的半导体激光器暴露于高温时，也可以抑制端面涂膜的剥离和端面涂膜的劣化。

公开(公告)号：US06985504B2

公开(公告)日：2006-01-10

申请号：US10368206

申请日：2003-02-18

申请人： Tetsuo Ueda ,  Keiji Yamane ,  Isao Kidoguchi ,  Shoji Fujimori

发明人： Tetsuo Ueda ,  Keiji Yamane ,  Isao Kidoguchi ,  Shoji Fujimori

IPC分类号： H01S5/00

CPC分类号： H01S5/028

摘要： A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

公开(公告)号：US5942831A

公开(公告)日：1999-08-24

申请号：US754147

申请日：1996-11-22

申请人： Toyonobu Yamada ,  Shoji Fujimori

发明人： Toyonobu Yamada ,  Shoji Fujimori

IPC分类号： H02K1/18 ,  H02K15/02 ,  H02K15/00

CPC分类号： H02K15/024 ,  Y10T29/49009

摘要： A laminated core for dynamoelectric machines and so on is formed of thin sheet core pieces each blanked into a predetermined configuration and stacked one upon another and are successively welded at a plurality of weld zones of an edge of each core piece by continuous or spot irradiation of laser beams so that the core pieces are combined together. The core piece constituting one of two end faces of the core has first notches formed in one half of the weld zones of the core piece. The core piece constituting the other end face of the core has second notches formed in one half of the weld zones of the core piece constituting the other end face of the core. The first notches are shifted from the second notches by 90 degrees.

摘要翻译： 用于电动机等的层叠铁芯由薄片芯片形成，每个芯片芯片被冲裁成预定的构造并且彼此层叠，并且通过连续或点状照射连续地焊接在每个芯片的边缘的多个焊接区域 激光束，使得芯片组合在一起。 构成芯的两个端面之一的芯片在芯片的焊接区域的一半中形成有第一切口。 构成芯的另一端面的芯片在构成芯的另一端面的芯片的焊接区域的一半中形成有第二凹口。 第一个凹口从第二个凹口偏移了90度。

公开(公告)号：US20050285135A1

公开(公告)日：2005-12-29

申请号：US11198089

申请日：2005-08-05

申请人： Tetsuo Ueda ,  Keiji Yamane ,  Isao Kidoguchi ,  Shoji Fujimori

发明人： Tetsuo Ueda ,  Keiji Yamane ,  Isao Kidoguchi ,  Shoji Fujimori

IPC分类号： H01S5/028 ,  H01L29/22 ,  H01L21/00 ,  H01L21/84 ,  H01L33/00

CPC分类号： H01S5/028

摘要： A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

摘要翻译： 半导体激光器包括形成在基板上的有源层和夹着有源层的一对包覆层。 在半导体激光器的至少一个谐振器端面上，提供了其中添加有氢的第一电介质膜。 在第一电介质膜和谐振器端面之间，提供了用于抑制氢的扩散的第二电介质膜。 即使当具有包含加氢膜的端面涂膜的半导体激光器暴露于高温时，也可以抑制端面涂膜的剥离和端面涂膜的劣化。