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公开(公告)号：US20060283378A1
公开(公告)日：2006-12-21
申请号：US11451989
申请日：2006-06-13
CPC分类号： C30B15/00 , C30B29/06 , Y10S117/916
摘要： In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield without being affected by changes of crystal diameter and initial amount of melt feedstock. The oxygen concentration is adjusted by estimating oxygen concentration during growth on the basis of a relationship among three parameters: crucible rotation rate (Ω), crucible temperature (T), and the ratio (β) of contact area of molten silicon with the inner wall of the crucible and with atmospheric gas, and by associating the temperature (T) with the ratio (β) by the function 1/β×Exp(−E/T) where E is the dissolution energy (E) of quartz into molten silicon to control at least one of the rotation rate (Ω) and temperature (T) to conform the estimated oxygen concentration to a target concentration.
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公开(公告)号：US06350314B1
公开(公告)日：2002-02-26
申请号：US09652443
申请日：2000-08-31
IPC分类号： G30B1504
CPC分类号： C30B29/06 , C30B13/00 , C30B15/04 , Y10S117/916
摘要： A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH3. The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.
摘要翻译： 用于生产氮掺杂半导体晶片的方法具有由含有NH 3的掺杂气体导出的氮。 该方法包括从熔融的半导体材料的熔体中拉出单晶，将掺杂气体供给到半导体材料，以及将氮掺杂的半导体晶片从拉出的单晶切割。 掺杂剂气体最多被馈送到半导体材料，直到对于半导体晶片被切割的单晶的那部分拉开始。
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3.发明授权
公开(公告)号：US5795382A
公开(公告)日：1998-08-18
申请号：US474641
申请日：1995-06-07
申请人： Weldon J. Bell , H. Michael Grimes
发明人： Weldon J. Bell , H. Michael Grimes
CPC分类号： C30B29/06 , C30B15/22 , Y10S117/906 , Y10S117/916 , Y10T117/10 , Y10T117/1004 , Y10T117/1032
摘要： A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).
摘要翻译： 一种用于控制根据切克劳斯基硅晶体生长技术生长的硅晶体（12）中的氧沉淀（106）的方法，其包括以下步骤：从熔融硅的储存器形成硅晶体（12）的圆柱形部分（22） （24）根据Czochralski硅晶体生长技术。 该方法包括以预定速率在硅晶体（12）中形成第一锥形部分（101）来终止切克劳斯基硅晶体生长技术的步骤。 第二锥形部分（102）包括连接到第一锥形部分（101）的级联中间部分（108），并且将级联的中间部分（108）中的氧沉淀（106）和远离圆柱形部分（22） 硅晶体（12）。 至少形成有用于将硅晶体（12）与熔融硅（24）分离的第三锥形部分（104）。
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公开(公告)号：US20020098358A1
公开(公告)日：2002-07-25
申请号：US09287199
申请日：1999-04-06
发明人： EIICHI IINO , MASANORI KIMURA
IPC分类号： B32B005/16
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902 , Y10S117/911 , Y10S117/916 , Y10T428/2982
摘要： There are disclosed a silicon seed crystal which is composed of silicon single crystal and used for the Czochralski method, wherein oxygen concentration in the seed crystal is 15 ppma (JEIDA) or less, a silicon seed crystal which is used for the Czochralski method, wherein the silicon seed crystal does not have a straight body, and a method for producing a silicon single crystal by the Czochralski method comprising using said seed crystal, bringing a tip end of the seed crystal into contact with a silicon melt to melt the tip end of the seed crystal, with or without performing necking operation, and growing a silicon single crystal. The method is capable of improving the rate of success in making crystals dislocation-free and the productivity of single crystal rods regardless of the use of necking operation.
摘要翻译： 公开了由硅单晶构成并用于切克劳斯基法的硅晶种，其中晶种中的氧浓度为15ppma（JEIDA）以下，用于切克劳斯基法的硅晶种，其中 硅晶种不具有直体，并且通过切克劳斯基法生产硅单晶的方法包括使用所述晶种，使晶种的尖端与硅熔体接触以熔化晶体的末端 种子晶体，有或没有进行颈缩操作，并生长硅单晶。 该方法能够提高使晶体无位错的成功率和单晶棒的生产率，而不管使用颈缩操作。
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公开(公告)号：US5607507A
公开(公告)日：1997-03-04
申请号：US517331
申请日：1995-08-21
申请人： Weldon J. Bell , H. Michael Grimes
发明人： Weldon J. Bell , H. Michael Grimes
CPC分类号： C30B29/06 , C30B15/22 , Y10S117/906 , Y10S117/916 , Y10T117/10 , Y10T117/1004 , Y10T117/1032
摘要： A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).
摘要翻译： 一种用于控制根据切克劳斯基硅晶体生长技术生长的硅晶体（12）中的氧沉淀（106）的方法，其包括以下步骤：从熔融硅的储存器形成硅晶体（12）的圆柱形部分（22） （24）根据Czochralski硅晶体生长技术。 该方法包括以预定速率在硅晶体（12）中形成第一锥形部分（101）来终止切克劳斯基硅晶体生长技术的步骤。 第二锥形部分（102）包括连接到第一锥形部分（101）的级联中间部分（108），并且将级联的中间部分（108）中的氧沉淀（106）和远离圆柱形部分（22） 硅晶体（12）。 至少形成有用于将硅晶体（12）与熔融硅（24）分离的第三锥形部分（104）。
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公开(公告)号：US4342616A
公开(公告)日：1982-08-03
申请号：US235207
申请日：1981-02-17
申请人： Brian J. Elliott , Eric W. Hearn , Gary Markovits
发明人： Brian J. Elliott , Eric W. Hearn , Gary Markovits
IPC分类号： H01L21/66 , G01N27/04 , H01L21/322 , H01L21/324 , H01L29/167 , C30B15/20
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
摘要： A method or technique is disclosed for predicting precisely where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted precisely where compensated intrinsic regions have been measured in the initial measurements.
摘要翻译： 公开了一种用于精确地预测在与集成电路制造相关的处理的半导体晶片中发生氧沉淀的方法或技术; 该技术基于这样的发现，即在晶片的任何热处理之前测量的电阻率峰值将发生这种沉淀。 换句话说，该技术允许通过在初始电阻率测量中获得的直径电阻率分布来表征晶片，从而可以精确地预测氧沉淀的变化，其中在初始测量中已经测量了补偿的本征区域。
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7.发明授权
公开(公告)号：US5935320A
公开(公告)日：1999-08-10
申请号：US918843
申请日：1997-08-26
IPC分类号： C30B29/06 , C30B13/00 , C30B15/00 , C30B33/02 , H01L21/322 , H01L21/324
CPC分类号： C30B15/00 , C30B13/00 , C30B29/06 , Y10S117/916
摘要： A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.
摘要翻译： 一种制造低缺陷密度的硅晶片的方法是其中a）通过熔融材料固化形成单晶并且然后冷却而产生具有至少4×10 17 / cm 3的氧掺杂浓度的硅单晶，然后冷却 在850℃至1100℃的温度范围内的冷却期间单晶的保持时间小于80分钟; b）处理单晶以形成硅晶片; 和c）将硅晶片在至少1000℃的温度下退火至少1小时。 此外，可以基于上述（a）的氧掺杂浓度至少为4×10 17Ω/ cm 3和氮掺杂浓度为至少1×10 14 / cm 3来制备硅单晶。
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公开(公告)号：US5096839A
公开(公告)日：1992-03-17
申请号：US693035
申请日：1991-04-30
申请人： Tsutomu Amai , Masanobu Ogino
发明人： Tsutomu Amai , Masanobu Ogino
IPC分类号： C30B29/06 , C30B33/02 , H01L21/322
CPC分类号： C30B33/02 , C30B29/06 , H01L21/3225 , Y10S117/916
摘要： The ratio between variations in the oxygen concentration before and after a silicon wafer is subjected to two types of heat treatments in which the temperatures and processing times are different is defined. The silicon wafer is subjected to a first heat treatment, and the interstitial oxygen concentrations before and after the first heat treatment are respectively set to [Oi].sub.1ini and [Oi].sub.1af. The silicon wafer is successively subjected to second and third heat treatments, and the interstitial oxygen concentrations before and after the second and third heat treatments are respectively set to [Oi].sub.2ini and [Oi].sub.2af. At this time, the interstitial oxygen concentrations [Oi].sub.1ini, [Oi].sub.1af, [Oi].sub.2ini and [Oi].sub.2af are so set as to satisfy the condition that ([Oi].sub.2ini -[Oi].sub.2af)/[Oi].sub.1ini -[Oi].sub.1af).gtoreq.20.
摘要翻译： 硅晶片之前和之后的氧浓度变化之间的比率被定义为其中温度和加工时间不同的两种热处理。 对硅晶片进行第一热处理，并且将第一热处理前后的间隙氧浓度分别设定为] 1ini和]1af。 硅晶片依次进行第二和第三热处理，第二和第三热处理之前和之后的间隙氧浓度分别设定为O 2ini和O 2af。 此时，间隙氧浓度] 1ini，]1af，]2ini和]2af被设定为满足条件：（] 2ii-]2af）/ [Oi ] 1ini- [Oi] 1af）> = = 20。
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9.发明授权Method for controlling the oxygen level of silicon rods pulled according to the Czochralski technique 失效控制根据切克劳斯基法（Czochralski）技术拉拔的硅棒氧气含量的方法
公开(公告)号：US4417943A
公开(公告)日：1983-11-29
申请号：US266227
申请日：1981-05-22
CPC分类号： C30B29/06 , C30B15/305 , Y10S117/916
摘要： A method for controlling the oxygen concentration profile of a rod of crystalline material such as silicon being pulled from a melt in a crucible includes varying the crucible rotation speed during the pulling process. In a preferred embodiment, the average oxygen concentration profile of a rod pulled at a constant crucible rotation speed is measured and then this information is used in growing another rod by controlling the crucible rotation speed during the pulling process so that its slope is opposite to the slope of the measured average oxygen concentration profile.
摘要翻译： 用于控制坩埚中的熔融物等被拉出的结晶性材料棒的氧浓度分布的方法包括在拉拔过程中改变坩埚的转速。 在优选实施例中，测量以恒定的坩埚旋转速度拉动的杆的平均氧浓度分布，然后通过在牵引过程中控制坩埚的转速来使该信息用于生长另一个杆，使得其斜率与 测量平均氧浓度分布的斜率。
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公开(公告)号：US4040895A
公开(公告)日：1977-08-09
申请号：US624618
申请日：1975-10-22
CPC分类号： C30B29/06 , C30B15/00 , Y10S117/916
摘要： The seed to tail oxygen concentration gradient in silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by a process employing stop-go crucible rotation to provide fluid shearing at the melt-crucible interface.
摘要翻译： 根据Czochralski工艺从包含在二氧化硅容器中的硅熔体中抽出的硅晶体中的种子尾氧浓度梯度通过采用停止式坩埚旋转以在熔融坩埚界面处提供流体剪切的方法来控制 。
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