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公开(公告)号：US20100219911A1
公开(公告)日：2010-09-02
申请号：US12781050
申请日：2010-05-17
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H03H9/15
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
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公开(公告)号：US07701113B2
公开(公告)日：2010-04-20
申请号：US12191451
申请日：2008-08-14
申请人： Shunsuke Kido , Takeshi Nakao , Yasuharu Nakai , Kenji Nishiyama , Michio Kadota
发明人： Shunsuke Kido , Takeshi Nakao , Yasuharu Nakai , Kenji Nishiyama , Michio Kadota
IPC分类号： H03H9/25
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。
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公开(公告)号：US08810104B2
公开(公告)日：2014-08-19
申请号：US12781050
申请日：2010-05-17
申请人： Shunsuke Kido , Takeshi Nakao , Yasuharu Nakai , Kenji Nishiyama , Michio Kadota
发明人： Shunsuke Kido , Takeshi Nakao , Yasuharu Nakai , Kenji Nishiyama , Michio Kadota
IPC分类号： H03H9/25
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。
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公开(公告)号：US20100146754A1
公开(公告)日：2010-06-17
申请号：US12706051
申请日：2010-02-16
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H01L41/22
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。
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公开(公告)号：US20090295507A1
公开(公告)日：2009-12-03
申请号：US12542733
申请日：2009-08-18
申请人： Hajime Kando , Shunsuke Kido , Takeshi Nakao , Daisuke Yamamoto
发明人： Hajime Kando , Shunsuke Kido , Takeshi Nakao , Daisuke Yamamoto
IPC分类号： H03H9/02
CPC分类号： H03H9/02921 , H03H9/0071 , H03H9/02858 , H03H9/02881 , H03H9/14538 , H03H9/14594
摘要： An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.
摘要翻译： 声波元件包括与压电材料接触并包括多个电极指的IDT电极，其包括在声波传播方向上彼此相邻并连接到不同电位的第一和第二电极指，并且连接到不同的电位，第一虚拟电极 手指经由位于第一电极指的电极指长度方向的外侧的间隙面对第一电极指。 在间隙附近的区域，第一突起设置在第一电极指和第一虚拟电极指中的至少一个中，第一突起从声波传播方向从至少一个侧边缘突出， 第一电极指和第一虚拟电极指。 声波元件大大改善了谐振频率的谐振特性，并且防止电极指之间的短路故障和绝缘性能的劣化。
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公开(公告)号：US08390400B2
公开(公告)日：2013-03-05
申请号：US12542733
申请日：2009-08-18
申请人： Hajime Kando , Shunsuke Kido , Takeshi Nakao , Daisuke Yamamoto
发明人： Hajime Kando , Shunsuke Kido , Takeshi Nakao , Daisuke Yamamoto
IPC分类号： H03H9/64
CPC分类号： H03H9/02921 , H03H9/0071 , H03H9/02858 , H03H9/02881 , H03H9/14538 , H03H9/14594
摘要： An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.
摘要翻译： 声波元件包括与压电材料接触并包括多个电极指的IDT电极，其包括在声波传播方向上彼此相邻并连接到不同电位的第一和第二电极指，并且连接到不同的电位，第一虚拟电极 手指经由位于第一电极指的电极指长度方向的外侧的间隙面对第一电极指。 在间隙附近的区域，第一突起设置在第一电极指和第一虚拟电极指中的至少一个中，第一突起从声波传播方向从至少一个侧边缘突出， 第一电极指和第一虚拟电极指。 声波元件大大改善了谐振频率的谐振特性，并且防止电极指之间的短路故障和绝缘性能的劣化。
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公开(公告)号：US20080296999A1
公开(公告)日：2008-12-04
申请号：US12191451
申请日：2008-08-14
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在比第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。
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8.发明授权High-frequency dielectric ceramic member, dielectric resonator, dielectric filter, dielectric duplexer, and communication device 失效高频电介质陶瓷构件，介质谐振器，介质滤波器，介质双工器和通信装置公开(公告)号：US06844797B2
公开(公告)日：2005-01-18
申请号：US10361892
申请日：2003-02-11
申请人： Shunsuke Kido , Nobuyuki Sakai , Naokatsu Fujinami
发明人： Shunsuke Kido , Nobuyuki Sakai , Naokatsu Fujinami
CPC分类号： C04B35/465 , C04B35/462 , C04B35/468 , C04B2235/3206 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , H01P1/2056 , H01P7/10
摘要： A high-frequency dielectric ceramic member is composed of an oxide ceramic containing Mg, Ba, Re, Ti, and O, wherein Re is at least one element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Dy, and Er. The oxide ceramic is represented by the formula aMgO-bBaO-cRe2On-(100-a-b-c)TiO2, wherein n=3 when Re is La, Nd, Sm, Eu, Dy, or Er, n=11/3 when Re is Pr, and n=4 when Re is Ce, wherein a, b, and c, in mole percent, satisfy the relationships 10.0≦a≦62.0, 0
摘要翻译： 高频电介质陶瓷构件由含有Mg，Ba，Re，Ti和O的氧化物陶瓷构成，其中Re为选自La，Ce，Pr，Nd，Sm，Eu中的至少一种元素， Dy和Er。 氧化物陶瓷由式aMgO-bBaO-cRe2On-（100-abc）TiO 2表示，当Re为La，Nd，Sm，Eu，Dy或Er时n = 3，当Re为Pr时，n = 11/3 ，当Re为Ce时n = 4，其中a，b和c以摩尔百分数满足关系10.0 <= a <= 62.0,0
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公开(公告)号：US08677582B2
公开(公告)日：2014-03-25
申请号：US12706051
申请日：2010-02-16
申请人： Shunsuke Kido , Takeshi Nakao , Yasuharu Nakai , Kenji Nishiyama , Michio Kadota
发明人： Shunsuke Kido , Takeshi Nakao , Yasuharu Nakai , Kenji Nishiyama , Michio Kadota
IPC分类号： H03H3/04
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A method for fabricating an acoustic wave device includes the steps of forming an insulating material layer on a piezoelectric substrate, forming a patterned photoresist on the insulating material layer, patterning the insulating material layer, and forming a piezoelectric-substrate exposed depression corresponding to a region where an interdigital transducer electrode is to be formed on a first insulator layer composed of the insulating material layer, depositing a metallic material on the piezoelectric substrate to form the interdigital transducer electrode in the piezoelectric-substrate exposed depression such that the overall interdigital transducer electrode is thinner than the first insulator layer and coating the photoresist with a metallic material, removing the photoresist and the metallic material on the photoresist, and depositing a second insulator layer so as to cover the interdigital transducer electrode and the first insulator layer.
摘要翻译： 一种制造声波器件的方法包括以下步骤：在压电衬底上形成绝缘材料层，在绝缘材料层上形成图案化的光致抗蚀剂，图案化绝缘材料层，形成压电衬底暴露的与区域相对应的凹陷 其中在由绝缘材料层构成的第一绝缘体层上形成叉指式换能器电极，在压电基板上沉积金属材料，以在压电基板暴露的凹陷中形成叉指式换能器电极，使得整个叉指式换能器电极为 比第一绝缘体层薄，并用金属材料涂覆光致抗蚀剂，去除光致抗蚀剂上的光致抗蚀剂和金属材料，并沉积第二绝缘体层以覆盖叉指式换能器电极和第一绝缘体层。
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