ACOUSTIC WAVE ELEMENT
    1.
    发明申请
    ACOUSTIC WAVE ELEMENT 有权
    声波元件

    公开(公告)号:US20090295507A1

    公开(公告)日:2009-12-03

    申请号:US12542733

    申请日:2009-08-18

    IPC分类号: H03H9/02

    摘要: An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.

    摘要翻译: 声波元件包括与压电材料接触并包括多个电极指的IDT电极,其包括在声波传播方向上彼此相邻并连接到不同电位的第一和第二电极指,并且连接到不同的电位,第一虚拟电极 手指经由位于第一电极指的电极指长度方向的外侧的间隙面对第一电极指。 在间隙附近的区域,第一突起设置在第一电极指和第一虚拟电极指中的至少一个中,第一突起从声波传播方向从至少一个侧边缘突出, 第一电极指和第一虚拟电极指。 声波元件大大改善了谐振频率的谐振特性,并且防止电极指之间的短路故障和绝缘性能的劣化。

    Acoustic wave element having an electrode finger with a protrusion
    2.
    发明授权
    Acoustic wave element having an electrode finger with a protrusion 有权
    声波元件,具有带突起的电极指

    公开(公告)号:US08390400B2

    公开(公告)日:2013-03-05

    申请号:US12542733

    申请日:2009-08-18

    IPC分类号: H03H9/64

    摘要: An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.

    摘要翻译: 声波元件包括与压电材料接触并包括多个电极指的IDT电极,其包括在声波传播方向上彼此相邻并连接到不同电位的第一和第二电极指,并且连接到不同的电位,第一虚拟电极 手指经由位于第一电极指的电极指长度方向的外侧的间隙面对第一电极指。 在间隙附近的区域,第一突起设置在第一电极指和第一虚拟电极指中的至少一个中,第一突起从声波传播方向从至少一个侧边缘突出, 第一电极指和第一虚拟电极指。 声波元件大大改善了谐振频率的谐振特性,并且防止电极指之间的短路故障和绝缘性能的劣化。

    Surface acoustic wave device
    3.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号:US07315107B2

    公开(公告)日:2008-01-01

    申请号:US11623506

    申请日:2007-01-16

    IPC分类号: H03H9/145

    CPC分类号: H03H9/02834 H03H9/02559

    摘要: A surface acoustic wave device includes a LiNbO3 substrate with a Euler angle in an area defined by a rectangle having four corners with coordinates (1) (0°, 7°, 101°), (2) (0°, 23°, 79°), (3) (0°, 23°, 79°), and (4) (0°, 7°, 79°), for example, and an electrode film made of Au, wherein surface acoustic waves including a longitudinal wave component as a main component are propagated thereon. The surface acoustic wave device uses longitudinal surface acoustic waves having a phase speed greater than with the “slow transverse wave”, and has a great electromechanical coupling coefficient and small propagation loss, and is suitable for handling high-frequency signals.

    摘要翻译: 表面声波装置包括在由具有坐标(1)(0°,7°,101°),(2)的四个角的矩形限定的区域中具有欧拉角的LiNbO 3 3衬底, (0°,23°,79°),(3)(0°,23°,79°)和(4)(0°,7°,79°) 其中包括纵波成分作为主要成分的表面声波在其上传播。 表面声波装置使用相位速度大于“慢横波”的纵波表面波,具有很大的机电耦合系数和较小的传播损耗,适用于处理高频信号。

    Surface acoustic wave device
    4.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号:US07180222B2

    公开(公告)日:2007-02-20

    申请号:US10638327

    申请日:2003-08-12

    IPC分类号: H02N2/00 H03H9/64

    CPC分类号: H03H9/02834 H03H9/02559

    摘要: A surface acoustic wave device includes a LiNbO3 substrate with a Euler angle in an area defined by a rectangle having four comers with coordinates (1) (0°, 7°, 101°), (2) (0°, 23°, 79°), (3) (0°, 23°, 79°), and (4) (0°, 7°, 79°), for example, and an electrode film made of Au, wherein surface acoustic waves including a longitudinal wave component as a main component are propagated thereon. The surface acoustic wave device uses longitudinal surface acoustic waves having a phase speed greater than with the “slow transverse wave”, and has a great electromechanical coupling coefficient and small propagation loss, and is suitable for handling high-frequency signals.

    摘要翻译: 表面声波装置包括在具有坐标(1)(0°,7°,101°),(2)的四个角的矩形限定的区域中具有欧拉角的LiNbO 3 N基底, (0°,23°,79°),(3)(0°,23°,79°)和(4)(0°,7°,79°) 其中包括纵波成分作为主要成分的表面声波在其上传播。 表面声波装置使用相位速度大于“慢横波”的纵波表面波,具有很大的机电耦合系数和较小的传播损耗,适用于处理高频信号。

    Boundary acoustic wave device and process for producing same
    6.
    发明授权
    Boundary acoustic wave device and process for producing same 有权
    边界声波装置及其生产方法

    公开(公告)号:US07550898B2

    公开(公告)日:2009-06-23

    申请号:US11756955

    申请日:2007-06-01

    IPC分类号: H02N41/00

    摘要: In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a laminate including the first medium, the second medium, and the electrodes disposed at the interface between the first medium and the second medium, adjusting the thickness of the second medium after the step of preparing the laminate to regulate a frequency or the acoustic velocity of a surface acoustic wave, a pseudo-boundary acoustic wave, or a boundary acoustic wave, after the adjusting step, forming the third medium different from the second medium in terms of the acoustic velocity with which the boundary acoustic wave propagates therethrough and/or in terms of material.

    摘要翻译: 在制造包括依次层叠的第一介质,第二介质和第三介质以及设置在第一介质和第二介质之间的接口的电极的弹性边界波装置的制造方法中, 制备包括第一介质,第二介质和设置在第一介质和第二介质之间的界面处的电极的层压体,在制备层压体的步骤之后调节第二介质的厚度以调节频率或声速 在调整步骤之后的声表面波,伪边界声波或声界面声波,形成与第二介质不同的第三介质,就声界面声波传播通过其的声速和/或 在材料方面。

    Boundary acoustic wave device and method for manufacturing boundary acoustic wave device
    7.
    发明授权
    Boundary acoustic wave device and method for manufacturing boundary acoustic wave device 有权
    边界声波装置及其制造方法

    公开(公告)号:US07522020B2

    公开(公告)日:2009-04-21

    申请号:US11970079

    申请日:2008-01-07

    申请人: Hajime Kando

    发明人: Hajime Kando

    IPC分类号: H03H9/15 H03H9/13 H03H9/54

    CPC分类号: H03H9/0222 H03H9/02228

    摘要: A boundary acoustic wave device has a small thickness, which is suitable for thin apparatuses, and can be manufactured at low cost. The boundary acoustic wave device includes a first IDT electrode disposed on a first surface of a substrate, a first insulating film covering the first IDT electrode, a second IDT electrode disposed on a second surface of the substrate, and a second insulating film covering the second IDT electrode. Either the substrate or the first and second insulating films have piezoelectric characteristics.

    摘要翻译: 弹性边界波装置的厚度小,适用于薄型装置,可以低成本地制造。 弹性边界波装置包括设置在基板的第一表面上的第一IDT电极,覆盖第一IDT电极的第一绝缘膜,设置在基板的第二表面上的第二IDT电极和覆盖第二IDT电极的第二绝缘膜 IDT电极。 基板或第一和第二绝缘膜都具有压电特性。

    Boundary acoustic wave device
    8.
    发明授权
    Boundary acoustic wave device 失效
    边界声波装置

    公开(公告)号:US07489064B2

    公开(公告)日:2009-02-10

    申请号:US11970623

    申请日:2008-01-08

    申请人: Hajime Kando

    发明人: Hajime Kando

    IPC分类号: H03H9/25

    CPC分类号: H03H9/0222 H03H9/02551

    摘要: A boundary acoustic wave device includes a quartz substrate, an IDT located on the substrate, and a dielectric arranged so as to cover the IDT. A boundary acoustic wave propagates across a boundary between the quartz substrate and the dielectric. The thickness of the IDT is determined so that the velocity of the SH boundary acoustic wave is below those of a slow transverse wave propagating across the quartz substrate and a slow transverse wave propagating across the dielectric. The Eulerian angles of the quartz substrate lie within hatched regions in FIG. 13.

    摘要翻译: 声界面波装置包括石英基板,位于基板上的IDT和覆盖IDT的电介质。 边界声波在石英衬底和电介质之间的边界上传播。 确定IDT的厚度,使得SH边界弹性波的速度低于在石英衬底上传播的慢横波的速度,以及传播穿过电介质的慢横波。 石英衬底的欧拉角位于图1中的阴影区域内。 13。

    Elastic boundary wave apparatus
    9.
    发明授权
    Elastic boundary wave apparatus 有权
    弹性边界波装置

    公开(公告)号:US07394336B2

    公开(公告)日:2008-07-01

    申请号:US11924873

    申请日:2007-10-26

    申请人: Hajime Kando

    发明人: Hajime Kando

    IPC分类号: H03H9/145 H03H9/25 H03H9/64

    摘要: An elastic boundary wave apparatus that is capable of suppressing an undesired response due to a comb-shaped capacitor electrode includes a first medium; a second medium stacked on the first medium; and a plurality of electrodes arranged in the boundary between the first and second media, wherein a filter and/or a resonator, and an electrostatic capacitor that is electrically connected to the filter and/or the resonator are defined by the plurality of electrodes, the filter and/or the resonator each include an IDT electrode, and the electrostatic capacitor is defined by a comb-shaped capacitor electrode. When the period of the electrode fingers of the IDT is denoted as λm, the sound velocity of an elastic boundary wave in the IDT is denoted as Vm, the period of the electrode fingers of the comb-shaped capacitor electrode is denoted as λc, and the sound velocity of a transverse wave having a lower sound velocity among the sound velocities of the slower transverse waves through the first and second media in the normal direction of the electrode fingers of the comb-shaped capacitor electrode is denoted as Vc, the relationship Vm/λm

    摘要翻译: 能够抑制由梳状电容器电极引起的不希望的响应的弹性边界波装置包括:第一介质; 堆叠在第一介质上的第二介质; 以及布置在第一和第二介质之间的边界中的多个电极,其中滤波器和/或谐振器以及电连接到滤波器和/或谐振器的静电电容器由多个电极限定, 滤波器和/或谐振器均包括IDT电极,并且静电电容器由梳状电容器电极限定。 当IDT的电极指的周期表示为lambdam时,IDT中的弹性边界波的声速表示为Vm,梳形电容器电极的电极指的周期表示为lambdac, 梳形电容器电极的电极指的方向上通过第一和第二介质的较慢的横波的声速之间具有较低声速的横波的声速表示为Vc, ?in-line-formula description =“In-line Formulas”end =“lead”?> Vm / lambdam 满意

    Boundary acoustic wave filter
    10.
    发明授权
    Boundary acoustic wave filter 有权
    边界声波滤波器

    公开(公告)号:US07310027B2

    公开(公告)日:2007-12-18

    申请号:US11538532

    申请日:2006-10-04

    申请人: Hajime Kando

    发明人: Hajime Kando

    CPC分类号: H03H9/0222

    摘要: A boundary acoustic wave filter includes a first medium layer, a second medium layer laminated on the first medium layer, and IDT electrodes that are disposed at the boundary between the first and second medium layers and that define an electroacoustic transducer. In the boundary acoustic wave filter, the sound velocity of boundary acoustic waves, which is the product of the wavelength determined by the period of the electrodes and the frequency at least the lower end of the stopband disposed at the high-frequency side of the passband, is less than the sound velocity of slow transverse waves propagating through the first medium layer and the second medium layer.

    摘要翻译: 边界声波滤波器包括第一介质层,层压在第一介质层上的第二介质层和设置在第一和第二介质层之间边界处并限定电声换能器的IDT电极。 在边界声波滤波器中,作为由电极的周期确定的波长和至少设置在通带的高频侧的阻带的下端的频率的乘积的边界声波的声速 小于通过第一介质层和第二介质层传播的慢横波的声速。