Abstract:
The invention relates to a layered structure (1) of an apparatus that luminesces by means of organic luminescence, which consists of at least two layers (2, 3) of transparent, semiconductive fibers as a substrate and an electrode, as well as a layer (5) disposed between adjacent layers (2, 3), composed of a photoactive polymer, in which layer, in interaction with the adjacent layers (2, 3) of transparent, semiconductive fibers, an organic luminescence (7) can be brought about. Furthermore, methods for the production and for the operation of corresponding layered structures, and a luminescent apparatus formed from them, are indicated.
Abstract:
The invention relates to a layered structure (1) of an apparatus that luminesces by means of organic luminescence, which consists of at least two layers (2, 3) of transparent, semiconductive fibers as a substrate and an electrode, as well as a layer (5) disposed between adjacent layers (2, 3), composed of a photoactive polymer, in which layer, in interaction with the adjacent layers (2, 3) of transparent, semiconductive fibers, an organic luminescence (7) can be brought about. Furthermore, methods for the production and for the operation of corresponding layered structures, and a luminescent apparatus formed from them, are indicated.
Abstract:
The invention relates to a method for production of an object with an at least partly silicon carbide structure from a blank of a carbon-containing material, wherein, in a first step, the object made from the carbon-containing material is produced essentially in the desired end form and/or end size, the object made from the carbon-containing material is then at least partly enveloped in a carbon-rich silicon dioxide granulate and then fired at least once in the envelope in a protective gas atmosphere such that the silicon dioxide granulate gives off gas containing silicon carbide which diffuses into the object and the carbon-containing material is completely or partly converted into silicon carbide. The invention further relates to a method for producing an object with an at least partly silicon carbide structure from a blank made from a carbon-containing material or a porous silicon carbide in which the pre-made object is infiltrated with a precursor sol containing silicon and carbon and fired at least once in a protective gas atmosphere at a firing temperature for carrying out a carbothermal reduction, wherein the infiltrated precursor sol gives off a gas containing silicon carbide which converts the material of the object partly or completely into silicon carbide.
Abstract:
The invention relates to a method for production of an object with an at least partly silicon carbide structure from a blank of a carbon-containing material, wherein, in a first step, the object made from the carbon-containing material is produced essentially in the desired end form and/or end size, the object made from the carbon-containing material is then at least partly enveloped in a carbon-rich silicon dioxide granulate and then fired at least once in the envelope in a protective gas atmosphere such that the silicon dioxide granulate gives off gas containing silicon carbide which diffuses into the object and the carbon-containing material is completely or partly converted into silicon carbide. The invention further relates to a method for producing an object with an at least partly silicon carbide structure from a blank made from a carbon-containing material or a porous silicon carbide in which the pre-made object is infiltrated with a precursor sol containing silicon and carbon and fired at least once in a protective gas atmosphere at a firing temperature for carrying out a carbothermal reduction, wherein the infiltrated precursor sol gives off a gas containing silicon carbide which converts the material of the object partly or completely into silicon carbide.
Abstract:
The invention relates to a photovoltaic device (1), comprising a photovoltaic acceptor material (7) and a photovoltaic donor material (10), in which the photovoltaic device (1) comprises at least two carrier layers (2, 3), of which one carrier layer (2) has n-doped electron donors (6) and the other carrier layer has acceptor material (7) as p-doped or undoped electron acceptors, wherein the carrier layers (2, 3) are arranged with respect to one another such that they touch one another at least in sections, and the carrier layers (2, 3) are wetted or coated in filmlike fashion with a photovoltaic donor material (10). The carrier layers (2, 3), which are formed in particular from fibres (6, 7) composed of silicon carbide SiC, enable textile solar cells. Methods for producing the fibres (6, 7) and for producing the photovoltaic device (1) and textile structures formed therefrom are furthermore described. A photovoltaic device (1) is furthermore proposed, in which carrier elements of an individual carrier layer have a corresponding photovoltaically active construction by virtue of correspondingly applied layers.
Abstract:
The invention relates to a photovoltaic device (1), comprising a photovoltaic acceptor material (7) and a photovoltaic donor material (10), in which the photovoltaic device (1) comprises at least two carrier layers (2, 3), of which one carrier layer (2) has n-doped electron donors (6) and the other carrier layer has acceptor material (7) as p-doped or undoped electron acceptors, wherein the carrier layers (2, 3) are arranged with respect to one another such that they touch one another at least in sections, and the carrier layers (2, 3) are wetted or coated in filmlike fashion with a photovoltaic donor material (10). The carrier layers (2, 3), which are formed in particular from fibres (6, 7) composed of silicon carbide SiC, enable textile solar cells. Methods for producing the fibres (6, 7) and for producing the photovoltaic device (1) and textile structures formed therefrom are furthermore described. A photovoltaic device (1) is furthermore proposed, in which carrier elements of an individual carrier layer have a corresponding photovoltaically active construction by virtue of correspondingly applied layers.