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公开(公告)号:US20160315085A1
公开(公告)日:2016-10-27
申请号:US15049648
申请日:2016-02-22
申请人: Yong-Joon CHOI , Tae-Yong KWON , Mirco CANTORO , Chang-Jae YANG , Dong-Hoon KHANG , Woo-Ram KIM , Cheol KIM , Seung-Jin MUN , Seung-Mo HA , Do-Hyoung KIM , Seong-Ju KIM , So-Ra YOU , Woong-ki HONG
发明人: Yong-Joon CHOI , Tae-Yong KWON , Mirco CANTORO , Chang-Jae YANG , Dong-Hoon KHANG , Woo-Ram KIM , Cheol KIM , Seung-Jin MUN , Seung-Mo HA , Do-Hyoung KIM , Seong-Ju KIM , So-Ra YOU , Woong-ki HONG
IPC分类号: H01L27/092 , H01L29/16 , H01L29/165 , H01L29/06
CPC分类号: H01L27/0924 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/1104 , H01L29/1054 , H01L29/165 , H01L29/66795 , H01L29/785
摘要: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.
摘要翻译: 半导体器件包括化合物半导体层,其中化合物半导体层在分开的区域中包括单独的鳍状图案。 单独的翅片图案可以包括不同的材料。 单独的翅片图案可以包括不同的尺寸,包括鳍片图案的一个或多个部分的宽度和高度中的一个或多个。 单独的翅片图案可以包括上图案和下图案。 上部图案和下部图案可以包括不同的材料。 上部图案和下部图案可以包括不同的尺寸。 单独的区域可以包括NMOS或PMOS的单独区域。 半导体器件可以包括化合物半导体层上的栅电极。 单独的栅电极可以与分开的鳍片图案相交。
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公开(公告)号:US09966375B2
公开(公告)日:2018-05-08
申请号:US15049648
申请日:2016-02-22
申请人: Yong-Joon Choi , Tae-Yong Kwon , Mirco Cantoro , Chang-Jae Yang , Dong-Hoon Khang , Woo-Ram Kim , Cheol Kim , Seung-Jin Mun , Seung-Mo Ha , Do-Hyoung Kim , Seong-Ju Kim , So-Ra You , Woong-ki Hong
发明人: Yong-Joon Choi , Tae-Yong Kwon , Mirco Cantoro , Chang-Jae Yang , Dong-Hoon Khang , Woo-Ram Kim , Cheol Kim , Seung-Jin Mun , Seung-Mo Ha , Do-Hyoung Kim , Seong-Ju Kim , So-Ra You , Woong-ki Hong
IPC分类号: H01L27/092 , H01L29/78 , H01L21/8234 , H01L29/66 , H01L29/10 , H01L21/8238 , H01L27/02 , H01L27/11 , H01L29/165
CPC分类号: H01L27/0924 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/1104 , H01L29/1054 , H01L29/165 , H01L29/66795 , H01L29/785
摘要: A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.
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