公开(公告)号：US20130189845A1

公开(公告)日：2013-07-25

申请号：US13354129

申请日：2012-01-19

申请人： Sungjin Kim ,  Deenesh Padhi ,  Song Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

发明人： Sungjin Kim ,  Deenesh Padhi ,  Song Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC分类号： H01L21/311

CPC分类号： H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.