公开(公告)号：US09053936B2

公开(公告)日：2015-06-09

申请号：US13613976

申请日：2012-09-13

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L27/02 ,  H01L27/06

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A method for forming a unit layout pattern includes: forming first through third active regions in the unit layout pattern, each of the first through third active regions aligning and extending along a length in a first direction and having a width in a second direction perpendicular to the first direction; forming first and second gate regions on the first and second active regions, the first and second gate regions electrically connected to each other; forming the first active region of a first conductive type within a second conductive type well region; forming the second active region of a second conductive type; and forming the third active region connected with the first and second gate regions to form a junction diode, the third active region being located between the first or the second active region and an end of the length in the first direction of the unit pattern.

摘要翻译： 一种用于形成单元布局图案的方法包括：以单元布局图案形成第一至第三有源区域，第一至第三有源区域中的每一个沿着第一方向的长度对准并延伸，并且具有垂直于第一方向的第二方向的宽度 第一个方向 在所述第一和第二有源区上形成第一和第二栅极区，所述第一和第二栅极区彼此电连接; 在第二导电类型阱区内形成第一导电类型的第一有源区; 形成第二导电类型的第二有源区; 以及形成与所述第一和第二栅极区域连接以形成结二极管的所述第三有源区，所述第三有源区位于所述第一或第二有源区之间，并且位于所述单位图案的所述第一方向上的长度的端部。

公开(公告)号：US20130011982A1

公开(公告)日：2013-01-10

申请号：US13613976

申请日：2012-09-13

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L21/8234

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

摘要翻译： 用于防止由等离子体电荷引起的损坏的结二极管的布局方法包括：以单元布局图形形成有源层以形成多个有源区; 形成栅极层以在所述有源区上形成多个栅极区; 在阱层内的多个有源区域中的至少一个中形成第一导电型掺杂区，其中形成第二导电类型阱区以形成第一导电型有源区; 在所述第二导电类型阱区域外的所述多个有源区域中的至少一个中形成第二导电型掺杂区域，以形成第二导电型有源区域; 以及形成与所述栅极区域连接的第二导电型掺杂区域，以在所述第一和第二导电型有源区域之间的至少一个有源区域中形成结二极管。

公开(公告)号：US20120314597A1

公开(公告)日：2012-12-13

申请号：US13491243

申请日：2012-06-07

申请人： Harkirat Singh ,  Soo-Young Kim ,  Jonghwa Kim ,  SeungHwan Kim ,  Ilju Na ,  Jae Min Lee ,  Chiu Ngo

发明人： Harkirat Singh ,  Soo-Young Kim ,  Jonghwa Kim ,  SeungHwan Kim ,  Ilju Na ,  Jae Min Lee ,  Chiu Ngo

IPC分类号： H04L12/28 ,  H04L12/26

CPC分类号： H04L41/0686 ,  H04L43/0882 ,  H04L65/1069 ,  H04L65/80

摘要： An enhanced stream reservation protocol comprising a Talker device sending a Stream Reservation Protocol (SRP) Talker Advertise message for streaming data to a Listener device, receiving the Talker Advertise message and checking bandwidth availability on an output port thereof for the streaming. In case of insufficient communication bandwidth, sending a failure message that includes information about available bandwidth from the Talker device to the Listener device. A protocol for communication in a bridged network, comprising a Talker device sending an SRP Talker Advertise message for streaming data to a Listener device. The Talker Advertise message includes communication path information from the Talker device to the Listener device. A communication path from the Talker device to the Listener device is selected based on said path metrics, for streaming data between the Talker device and the Listener device.

摘要翻译： 一种增强型流预留协议，包括一个发送器发送用于流式传输数据到监听器设备的流预留协议（SRP）通话者广告消息的通话器装置，接收该通话器广告消息并检查其输出端口上的带宽可用性。 在通信带宽不足的情况下，发送包含有关可用带宽从Talker设备到监听器设备的信息的故障消息。 一种用于在桥接网络中进行通信的协议，包括发话器设备发送用于将数据流传送到监听器设备的SRP Talker Advertise消息。 Talker Advertise消息包括从Talker设备到监听器设备的通信路径信息。 基于所述路径度量来选择从Talker设备到监听器设备的通信路径，用于在Talker设备和监听器设备之间传输数据。

公开(公告)号：US08331765B2

公开(公告)日：2012-12-11

申请号：US12713540

申请日：2010-02-26

申请人： Chang-yeul Kwon ,  Yang-Iim Choi ,  Il-ju Na ,  Jae-min Lee ,  Guoping Fan ,  Soo-young Kim ,  Young-jae Kim

发明人： Chang-yeul Kwon ,  Yang-Iim Choi ,  Il-ju Na ,  Jae-min Lee ,  Guoping Fan ,  Soo-young Kim ,  Young-jae Kim

IPC分类号： H04N9/80

CPC分类号： H04N21/4367 ,  G11B20/00086 ,  H04L63/0428 ,  H04N7/1675 ,  H04N21/43637

摘要： A method and apparatus for protecting against copying high definition (HD) contents transmitted in a wireless HD (WiHD) network by using a WiHD source or sink device, the method including: determining a type of copy protection of contents transmitted in the WiHD network; calculating accumulatively a number of media access control (MAC) sub-packets as a input counter information, wherein the MAC sub packets constitute a MAC payload including the contents; packetizing the type of copy protection and the input counter information into a MAC packet; and transmitting the MAC packet to a WiHD sink device.

摘要翻译： 一种用于通过使用WiHD源或宿设备来防止在无线HD（WiHD）网络中传输的高清（HD）内容的复制的方法和装置，所述方法包括：确定在WiHD网络中发送的内容的复制保护的类型; 将多个媒体访问控制（MAC）子分组累积计算为输入计数器信息，其中所述MAC子分组构成包含所述内容的MAC有效载荷; 将复制保护类型和输入计数器信息打包成MAC数据包; 以及将所述MAC分组发送到WiHD宿设备。

公开(公告)号：US08288223B2

公开(公告)日：2012-10-16

申请号：US13364362

申请日：2012-02-02

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L21/8234

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

摘要翻译： 用于防止由等离子体电荷引起的损坏的结二极管的布局方法包括：以单元布局图形形成有源层以形成多个有源区; 形成栅极层以在所述有源区上形成多个栅极区; 在阱层内的多个有源区域中的至少一个中形成第一导电型掺杂区，其中形成第二导电类型阱区以形成第一导电型有源区; 在所述第二导电类型阱区域外的所述多个有源区域中的至少一个中形成第二导电型掺杂区域，以形成第二导电型有源区域; 以及形成与所述栅极区域连接的第二导电型掺杂区域，以在所述第一和第二导电型有源区域之间的至少一个有源区域中形成结二极管。

公开(公告)号：US20120156616A1

公开(公告)日：2012-06-21

申请号：US13241612

申请日：2011-09-23

申请人： Hyun-Yong CHO ,  Min-Kook CHUNG ,  Ji-Young JEONG ,  Jong-Hwa LEE ,  Yong-Sik YOO ,  Jeong-Woo LEE ,  Hwan-Sung CHEON ,  Soo-Young KIM ,  Young-Ho KIM ,  Jae-Hyun KIM ,  Su-Min PARK

发明人： Hyun-Yong CHO ,  Min-Kook CHUNG ,  Ji-Young JEONG ,  Jong-Hwa LEE ,  Yong-Sik YOO ,  Jeong-Woo LEE ,  Hwan-Sung CHEON ,  Soo-Young KIM ,  Young-Ho KIM ,  Jae-Hyun KIM ,  Su-Min PARK

IPC分类号： G03F7/075

CPC分类号： G03F7/0233 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound; and (E) a solvent. In the above Chemical Formula 1, each substituent is the same as defined in the specification.

摘要翻译： 公开了一种正型感光性树脂组合物，其包含（A）包含由以下化学式1表示的重复单元的聚苯并恶唑前体; （B）光敏重氮醌化合物; （C）硅烷化合物; （D）酚化合物; 和（E）溶剂。 在上述化学式1中，各取代基与说明书中的定义相同。

公开(公告)号：US20120149160A1

公开(公告)日：2012-06-14

申请号：US13364362

申请日：2012-02-02

申请人： Soo-Young Kim ,  Jong-Hak Won

发明人： Soo-Young Kim ,  Jong-Hak Won

IPC分类号： H01L21/336

CPC分类号： H01L27/0255 ,  H01L27/0629

摘要： A layout method of junction diodes for preventing damage caused by plasma charge includes forming an active layer to form a plurality of active regions in a unit layout pattern; forming a gate layer to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions to form a junction diode in at least one active region between the first and second conductive type active regions.

摘要翻译： 用于防止由等离子体电荷引起的损坏的结二极管的布局方法包括：以单元布局图形形成有源层以形成多个有源区; 形成栅极层以在所述有源区上形成多个栅极区; 在阱层内的多个有源区域中的至少一个中形成第一导电型掺杂区，其中形成第二导电类型阱区以形成第一导电型有源区; 在所述第二导电类型阱区域外部的所述多个有源区域中的至少一个中形成第二导电型掺杂区域，以形成第二导电型有源区域; 以及形成与所述栅极区域连接的第二导电型掺杂区域，以在所述第一和第二导电型有源区域之间的至少一个有源区域中形成结二极管。

公开(公告)号：US08095723B2

公开(公告)日：2012-01-10

申请号：US11675629

申请日：2007-02-16

申请人： Soo Young Kim ,  Sung In Jung

发明人： Soo Young Kim ,  Sung In Jung

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F12/0246

摘要： A log-based FTL and an operating method thereof for improving performances of reading and writing operations to increase the lifetime of a flash memory. In the method, when a reading operation for an LBN and an LPN is requested, a PBN and a PPN corresponding to the LBN and the LPN are calculated with reference to a pagemap corresponding to the LBN. A physical page of a physical block corresponding to the PBN and the PPN is accessed so that a reading operation is performed. On the other hand, when a writing operation for the LBN and the LPN is requested, a PBN and a PPN for a free-page of a physical block last assigned for the LBN are calculated with reference to a blockmap. The physical page of the physical block corresponding to the PBN and the PPN is accessed, so that a writing operation is performed. The pagemap stores a PBN and a PPN, and the blockmap stores a PBN list and a PPN.

摘要翻译： 基于对数的FTL及其操作方法，用于提高读写操作的性能以增加闪速存储器的使用寿命。 在该方法中，当请求LBN和LPN的读取操作时，参照与LBN对应的页面映射来计算与LBN和LPN对应的PBN和PPN。 访问对应于PBN和PPN的物理块的物理页面，从而执行读取操作。 另一方面，当请求对LBN和LPN的写入操作时，参考块映射来计算最后为LBN分配的物理块的自由页面的PBN和PPN。 访问对应于PBN和PPN的物理块的物理页面，从而执行写入操作。 页面映射存储PBN和PPN，并且块映射存储PBN列表和PPN。

公开(公告)号：US20110107006A1

公开(公告)日：2011-05-05

申请号：US12929222

申请日：2011-01-10

申请人： Yun-Hee Shin ,  Han-Gu Sohn ,  Young-Min Lee ,  Ho-Cheol Lee ,  Soo-Young Kim ,  Dong-Hyuk Lee ,  Chang-Ho Lee

发明人： Yun-Hee Shin ,  Han-Gu Sohn ,  Young-Min Lee ,  Ho-Cheol Lee ,  Soo-Young Kim ,  Dong-Hyuk Lee ,  Chang-Ho Lee

IPC分类号： G06F12/00

CPC分类号： G06F12/02

摘要： A multiprocessor system and method thereof are provided. The example multiprocessor system may include first and second processors, a dynamic random access memory having a memory cell array, the memory cell array including a first memory bank coupled to the first processor through a first port, second and fourth memory banks coupled to the second processor through a second port, and a third memory bank shared and connected with the first and second processors through the first and second ports, and a bank address assigning unit for assigning bank addresses to select individually the first and second memory banks, as the same bank address through the first and second ports, so that starting addresses for the first and second memory banks become equal in booting, and assigning bank addresses to select the third memory bank, as different bank addresses through the first and second ports, and assigning, through the second port, bank addresses to select the fourth memory bank, as the same bank address as a bank address to select the third memory bank through the first port.

公开(公告)号：US20110035544A1

公开(公告)日：2011-02-10

申请号：US12909069

申请日：2010-10-21

申请人： Chi-Sung OH ,  Yong-Jun KIM ,  Kyung-Woo NAM ,  Jin-Kuk KIM ,  Soo-Young KIM

发明人： Chi-Sung OH ,  Yong-Jun KIM ,  Kyung-Woo NAM ,  Jin-Kuk KIM ,  Soo-Young KIM

IPC分类号： G06F12/06 ,  G06F12/00

CPC分类号： G11C5/02 ,  G11C8/12

摘要： A multipath accessible semiconductor memory device having a mailbox area and a mailbox access control method thereof are provided. The semiconductor memory device includes N number of ports, at least one shared memory area allocated in a memory cell array, and N number of mailbox areas for message communication. The at least one shared memory area is operationally connected to the N number of ports, and is accessible through a plurality of data input/output lines to form a data access path between the at least one shared memory area and one port, having an access right to the at least one memory area, among the N number of ports. The N number of mailbox areas are provided in one-to-one correspondence with the N number of ports and are accessible through the plurality of data input/output lines when an address of a predetermined area of the at least one shared memory area is applied to the semiconductor memory device. An efficient layout of mailboxes and an efficient message access path can be obtained.

摘要翻译： 提供具有邮箱区域和邮箱访问控制方法的多路径可访问半导体存储装置。 半导体存储器件包括N个端口，分配在存储单元阵列中的至少一个共享存储区域和N个用于消息通信的邮箱区域。 所述至少一个共享存储区域可操作地连接到所述N个端口，并且可通过多个数据输入/输出线路访问，以在所述至少一个共享存储区域和一个端口之间形成数据访问路径， 在N个端口中的至少一个存储区域的权限。 N个邮箱区域与N个端口一一对应地提供，并且当应用至少一个共享存储区域的预定区域的地址时可以通过多个数据输入/输出线路访问邮箱区域 到半导体存储器件。 可以获得邮箱的有效布局和高效的邮件访问路径。