EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
    2.
    发明申请
    EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE 有权
    外延基板和制造外延基板的方法

    公开(公告)号:US20120161152A1

    公开(公告)日:2012-06-28

    申请号:US13414104

    申请日:2012-03-07

    摘要: Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

    摘要翻译: 提供了具有少量翘曲的无裂纹外延基板,其中使用硅基板作为基底。 外延衬底包括(111)单晶Si衬底,缓冲层和晶体层。 缓冲层由第一层叠单元和第二层压单元交替层叠形成。 第一层压单元包括组成调制层和第一中间层。 组成调制层由具有不同组成的第一单位层和第二单位层形成,以便在其中存在压缩应变。 第一中间层增强了存在于组成调制层中的压缩应变。 第二层压单元是基本上无应变的第二中间层。