Method of forming a sapphire single crystal
    1.
    发明授权
    Method of forming a sapphire single crystal 有权
    形成蓝宝石单晶的方法

    公开(公告)号:US08157913B2

    公开(公告)日:2012-04-17

    申请号:US12021758

    申请日:2008-01-29

    IPC分类号: C30B15/00

    摘要: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

    摘要翻译: 公开了包括蓝宝石的各种单晶。 单晶具有期望的几何性质,包括宽度不小于约15cm,厚度不小于约0.5cm。 单晶还可以具有其它特征,例如最大厚度变化,并且形成的晶体可以具有大致对称的颈部,特别是与从晶体的颈部到主体的过渡有关。 还公开了形成这种晶体的方法和实施方法的装置。