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1.发明申请公开(公告)号：US20170292205A1
公开(公告)日：2017-10-12
申请号：US15507851
申请日：2015-09-09
发明人： Naoki MASUDA , Masahiko URANO
摘要： A single crystal pulling apparatus including: a remelting detection apparatus which detects that remelting of a lower end portion of the semiconductor single crystal is completed from a change in weight of the semiconductor single crystal when the lower end portion of the semiconductor single crystal is immersed in the melt to be remolten by using the wire; and a lowermost end detection apparatus which detects a lowermost end of the semiconductor single crystal from a position where no current flows between the semiconductor single crystal and the melt when the semiconductor single crystal is taken up with the use of the wire while applying a voltage between the semiconductor single crystal and the melt by applying a voltage between the crucible and the wire.
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公开(公告)号：US20160153117A1
公开(公告)日：2016-06-02
申请号：US14900426
申请日：2014-06-20
发明人： Guojian Wang , Dongming Mei
摘要： In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
摘要翻译： 根据本发明，教导了在钢炉内使用石英屏蔽的高纯度锗晶体生长方法。 石英屏蔽适用于不仅引导惰性气体的流动，而且还防止锗熔体受绝缘材料，石墨坩埚，感应线圈和不锈钢室的污染。 称重传感器可自动控制晶体直径，有助于确保锗熔体的耗尽。 该方法既方便又有效地通过相对低的熟练操作者生产高纯锗晶体。
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公开(公告)号：US20120031323A1
公开(公告)日：2012-02-09
申请号：US13189645
申请日：2011-07-25
申请人： Shinichi Kyufu
发明人： Shinichi Kyufu
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/28 , C30B15/305 , C30B30/04
摘要： Silicon single crystals having suppressed deformation and dislocations and the successful omission of the tail section are produced by growing the straight-body section of the silicon single crystal under the influence of a horizontal magnetic field with a magnetic flux density at its magnetic center being ≧1000 Gauss, and ≦2000 Gauss, reducing the lifting speed of the silicon single crystal relative to the surface of the melt to 0 mm/minute, maintaining a static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the entire growth front of the silicon single crystal forms a convex shape protruding in a direction opposite to the lifting direction of the silicon single crystal, and separating the silicon single crystal from the melt.
摘要翻译： 通过在其磁性中心处的磁通密度的水平磁场的影响下生长硅单晶的直体部分来产生具有抑制变形和位错以及成功省略尾部的硅单晶。 高斯和高斯2000高斯，将单晶相对于熔体表面的提升速度降低到0毫米/分钟，保持静态，直到硅单晶的表观重量减少，然后 进一步维持静电状态，使得单晶单晶的整个生长前沿形成在与单晶的提升方向相反的方向上突出的凸形，并将硅单晶与熔体分离。
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公开(公告)号：US20110280784A1
公开(公告)日：2011-11-17
申请号：US13129313
申请日：2009-11-13
CPC分类号： B22D11/01 , C01B33/037 , C30B15/002 , C30B15/007 , C30B15/06 , C30B15/14 , C30B15/22 , C30B15/28 , C30B15/30 , C30B29/06 , C30B29/60 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A method for producing a solid layer material (42), comprising providing (70) a first layer (30); providing (72) a second liquid layer (32) on the first layer (30); providing (74) a third liquid layer (34) on the second liquid layer (32), wherein the third liquid layer has a melting point that is higher than a melting point of the second liquid layer, and wherein the second liquid layer is between the first and third layers; cooling (76) a surface of the third liquid layer to a temperature less than the melting point of the third liquid layer; forming (78) the solid layer from the third liquid layer while cooling the third layer liquid; and removing (80) the solid layer.
摘要翻译： 一种制备固体层材料的方法，包括提供（70）第一层（30）; 在第一层（30）上提供（72）第二液体层（32）; 在所述第二液体层（32）上提供（74）第三液体层（34），其中所述第三液体层具有高于所述第二液体层的熔点的熔点，并且其中所述第二液体层在 第一和第三层; 将第三液体层的表面冷却（76）至低于第三液体层的熔点的温度; 在冷却第三层液体的同时，从第三液体层形成（78）固体层; 并去除（80）固体层。
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公开(公告)号：US20100263585A1
公开(公告)日：2010-10-21
申请号：US12732492
申请日：2010-07-01
申请人： Ken Hamada
发明人： Ken Hamada
IPC分类号： C30B15/28
CPC分类号： C30B15/26 , C30B15/28 , Y10T117/1004 , Y10T117/1012
摘要： When pulling and growing a single crystal from a raw material melt by the Czochralski method, a boundary between the single crystal and the raw material melt is imaged by an optical sensor, and also the weight of the single crystal is measured by a weight sensor, a diameter value of the single crystal is calculated on the basis of first measured values of the diameter of the single crystal derived from image data captured by the optical sensor and second measured values of the diameter of the single crystal derived from weight data captured by the weight sensor, and a pulling rate of the single crystal and the temperature of the raw material melt are adjusted on the basis of the calculated diameter value to thereby control the diameter of the single crystal, and thus it is possible to accurately measure the diameter of a growing single crystal.
摘要翻译： 当通过Czochralski法从原料熔体中拉出和生长单晶时，通过光学传感器对单晶和原料熔体之间的边界进行成像，并且通过重量传感器测量单晶的重量， 基于由光学传感器捕获的图像数据导出的单晶直径的第一测量值和从由该光学传感器捕获的重量数据导出的单晶直径的第二测量值，计算单晶的直径值 基于计算出的直径值来调节单体的重量传感器和单晶的拉出速度和原料熔融温度，从而控制单晶的直径，从而可以精确地测量单晶的直径 增长单晶。
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6.发明授权
公开(公告)号：US5074953A
公开(公告)日：1991-12-24
申请号：US395724
申请日：1989-08-18
申请人： Keiji Shirata , Koichi Sassa , Kenji Tomizawa
发明人： Keiji Shirata , Koichi Sassa , Kenji Tomizawa
CPC分类号： C30B15/28 , C30B29/40 , Y10S117/907 , Y10T117/1008 , Y10T117/1064
摘要： The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in an outer air-tight vessel. The second material is contained in a crucible supported in the inner vessel by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, temperature of a furnace installed on the inner vessel is adjusted so that the pressure of the gas of the first volatile component material in the inner vessel is controlled. A single crystal is pulled up from the melt by an upper shaft extending from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up step includes the steps of: measuring the weight of the growing crystal, the weight influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the crystal for the error due to the pressure difference, thereby obtaining an accurate estimate of the weight of the crystal; and controlling a diameter of the growing crystal on the basis of the weight estimate of the crystal.
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7.发明授权Weighing cell apparatus for diameter control of a rotatable growing crystal 失效用于可旋转生长晶体的直径控制的称重电池装置
公开(公告)号：US3934983A
公开(公告)日：1976-01-27
申请号：US395172
申请日：1973-09-07
CPC分类号： C30B15/22 , C30B15/28 , C30B15/30 , Y10S117/911 , Y10T117/1008 , Y10T117/1072
摘要： Apparatus for the closed-loop controlled growth of crystalline material by the Czochralski technique includes means for establishing a melt of a given crystallisable material, means for pulling a crystal from said melt when established, said means for pulling incorporating a rigid elongated pulling member defining a crystal pulling axis, means for rotating said pulling member about said crystal pulling axis and a weighing cell located at the end of said pulling member distant from said means for establishing a melt and capable of providing, for the purpose of closed-loop control of said crystal pulled, a signal related to the force along said crystal pulling axis on the pulling member.The weighing cell is preferably one of the kind having a spring and a transducer arranged to produce an electrical output related to the tension of the spring. The pulling member is preferably freely suspended from the weighing cell by a coupling which allows the pulling member to be rotated without rotating the weighing cell.
摘要翻译： 用于通过切克劳斯基（Czochralski）技术对结晶材料进行闭环控制生长的装置包括用于建立给定的可结晶材料的熔体的装置，用于在建立时从所述熔体中拉出晶体的装置，所述用于拉动的装置包括限定一个 晶体牵引轴，用于围绕所述晶体牵引轴线旋转所述牵引构件的装置和位于所述牵引构件的远离所述用于建立熔体的装置的端部处的称重单元，并且能够提供用于闭环控制所述 晶体拉出与牵引构件上沿着晶体牵引轴线的力相关的信号。
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公开(公告)号：US20230332326A1
公开(公告)日：2023-10-19
申请号：US18028815
申请日：2021-09-03
发明人： Jin Sung PARK , Kyung Seok LEE , Young Jun LEE , Keun Ho KIM
CPC分类号： C30B15/20 , C30B29/06 , C30B15/002 , C30B15/28
摘要： Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.
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9.发明授权Crucible weight measurement system for controlling feedstock introduction in Czochralski crystal growth 有权用于控制Czochralski晶体生长中原料引入的坩埚重量测量系统公开(公告)号：US08257496B1
公开(公告)日：2012-09-04
申请号：US12315452
申请日：2008-12-03
IPC分类号： C30B35/00
CPC分类号： C30B15/02 , C30B15/28 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1056
摘要： A weighing system is provided for a continuous Czochralski process that accurately measures the weight of the crucible and melt during crystal growth to control the introduction of feedstock in order to keep the weight approximately constant. The system can measure the weight of the crucible while the crucible is rotating, and is insensitive to vibrations of the melt surface as well as variable torques on the crucible shaft induced by the rotation. The system also measures the weight of the crucible and its contents in order to control the amount of feedstock recharged after an ingot is withdrawn.
摘要翻译： 为连续的切克劳斯基（Czochralski）工艺提供了称重系统，可精确测量坩埚的重量，并在晶体生长过程中熔化，以控制原料的引入，以保持重量大致恒定。 该系统可以在坩埚旋转时测量坩埚的重量，并且对熔体表面的振动以及由旋转引起的坩埚轴上的可变转矩不敏感。 该系统还测量坩埚的重量及其含量，以便控制在锭被取出之后再充电的原料的量。
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公开(公告)号：US20110253031A1
公开(公告)日：2011-10-20
申请号：US13141886
申请日：2009-12-16
申请人： Tomohiro Shonai
发明人： Tomohiro Shonai
IPC分类号： C30B15/20
摘要： Following steps are implemented: a melting step in which aluminum oxide within a crucible is melted to obtain an aluminum melt; a shoulder-portion formation step in which a seed crystal brought into contact with the aluminum melt is pulled up to thereby form a shoulder portion below the seed crystal; a body-portion formation step in which single-crystal sapphire is pulled up from the melt to form a body portion; and a tail-portion formation step in which a mixed gas including oxygen and an inert gas and having an oxygen concentration set at not less than 1.0 vol % nor more than 5.0 vol % is supplied while the single-crystal sapphire is pulled away from the melt to form a tail portion. Thus, when single-crystal sapphire is obtained by growth from a melt of aluminum oxide, formation of a protrusion in the tail portion of the single-crystal sapphire is more effectively inhibited.
摘要翻译： 实施以下步骤：将坩埚内的氧化铝熔融以获得铝熔体的熔融步骤; 将与铝熔体接触的籽晶拉起，从而在晶种下形成肩部的肩部形成工序; 身体部分形成步骤，其中将单晶蓝宝石从熔体拉起以形成主体部分; 以及尾部形成工序，其中，当将单晶蓝宝石拉离时，供给包含氧和惰性气体并且氧浓度设定在1.0体积％以上5.0体积％以下的混合气体 熔化形成尾部。 因此，当通过从氧化铝的熔融物生长获得单晶蓝宝石时，更有效地抑制在单晶蓝宝石尾部形成突起。
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