公开(公告)号：US4234361A

公开(公告)日：1980-11-18

申请号：US54815

申请日：1979-07-05

申请人： Henry Guckel ,  Steven T. Larsen

发明人： Henry Guckel ,  Steven T. Larsen

IPC分类号： H01L21/225 ,  H01L21/306 ,  H01L21/223 ,  H01L29/06

CPC分类号： H01L21/02052 ,  H01L21/2252 ,  H01L21/30608 ,  Y10S438/924 ,  Y10S438/974 ,  Y10T29/49103

摘要： The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of deformation by electrostatic forces and are applicable to a wide range of uses including the manufacture of solid state pressure sensors, resonant, and antenna structures, as well as electro-optical display elements. A processing technique is disclosed which is particularly adapted to forming membranes in silicon substrates in a manner which is compatible with the construction thereon of other integrated circuit components. The process involves a short and concentrated deposition diffusion of boron into one of the surfaces of the substrate, followed by rapid and substantially oxygen and water vapor free transfer of the substrate to a drive furnace which is oxygen and water vapor free in which diffusion to a preselected depth takes place over a controlled period of time.

摘要翻译： 本发明涉及在硅层中形成的薄硅膜，其通常用作制造集成电子电路中的基板。 根据本发明构造的薄膜能够通过静电力变形，并且可应用于广泛的用途，包括制造固态压力传感器，共振和天线结构以及电光显示元件。 公开了一种处理技术，其特别适用于以与其它集成电路部件上的结构兼容的方式在硅衬底中形成膜。 该方法包括将硼沉积扩散到基底的一个表面中，然后快速且基本上将氧气和水蒸汽自由地转移到无氧和水蒸气的驱动炉中，其中扩散到 预选深度在受控的时间内进行。

公开(公告)号：US4203128A

公开(公告)日：1980-05-13

申请号：US944637

申请日：1978-09-21

申请人： Henry Guckel ,  Steven T. Larsen

发明人： Henry Guckel ,  Steven T. Larsen

IPC分类号： F15C5/00 ,  F16K99/00 ,  G01L7/08 ,  G01L9/00 ,  H01G5/16 ,  H01L29/84 ,  H03H9/17 ,  H01L29/04 ,  H01L27/12 ,  H01L29/06

CPC分类号： H01L29/84 ,  F15C5/00 ,  F16K99/0001 ,  F16K99/0005 ,  F16K99/0015 ,  F16K99/0051 ,  G01L7/086 ,  G01L9/0073 ,  H01G5/16 ,  H03H9/171 ,  F16K2099/0074 ,  Y10T137/2213

摘要： The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of deformation by electrostatic forces and are applicable to a wide range of uses including the manufacture of solid state pressure sensors, resonant, and antenna structures, as well as electro-optical display elements. A processing technique is disclosed which is particularly adapted to forming membranes in silicon substrates in a manner which is compatible with the construction thereon of other integrated circuit components.

摘要翻译： 本发明涉及在硅层中形成的薄硅膜，其通常用作制造集成电子电路中的基板。 根据本发明构造的薄膜能够通过静电力变形，并且可应用于广泛的用途，包括制造固态压力传感器，共振和天线结构以及电光显示元件。 公开了一种处理技术，其特别适用于以与其它集成电路部件上的结构兼容的方式在硅衬底中形成膜。