公开(公告)号：US20080315964A1

公开(公告)日：2008-12-25

申请号：US12213525

申请日：2008-06-20

申请人： Su Tae Kim

发明人： Su Tae Kim

IPC分类号： H03B7/06 ,  H03H11/48

CPC分类号： H03J3/20 ,  H03B5/1215 ,  H03B5/1228 ,  H03B5/124 ,  H03B5/1259 ,  H03H11/48 ,  H03H11/52

摘要： A tunable active inductor and a voltage controlled oscillator (VCO) are provided. The tunable active inductor includes a first current source coupled to a power source, a first metal-oxide semiconductor (MOS) transistor including a drain coupled to the first current source and a gate coupled to a first bias voltage, a second MOS transistor including a drain coupled to the power source and a gate coupled to the drain of the first MOS transistor, the gate of the second MOS and the drain of the first MOS being coupled to a second bias voltage, a resonator coupled to a source of the second MOS transistor, and a second current source coupled to the resonator. The VCO employs the tunable active inductor to freely vary the oscillation range of the VCO in a high frequency band.

摘要翻译： 提供可调谐有源电感器和压控振荡器（VCO）。 可调谐有源电感器包括耦合到电源的第一电流源，包括耦合到第一电流源的漏极和耦合到第一偏置电压的栅极的第一金属氧化物半导体（MOS）晶体管，第二MOS晶体管，包括 耦合到电源的漏极和耦合到第一MOS晶体管的漏极的栅极，第二MOS的栅极和第一MOS的漏极耦合到第二偏置电压，耦合到第二MOS晶体管的源极的谐振器 晶体管和耦合到谐振器的第二电流源。 VCO使用可调谐有源电感器来自由地改变VCO在高频带中的振荡范围。

公开(公告)号：US20090152675A1

公开(公告)日：2009-06-18

申请号：US12330608

申请日：2008-12-09

申请人： Su-Tae Kim

发明人： Su-Tae Kim

IPC分类号： H01L27/06 ,  H01L21/62

CPC分类号： H01L27/08 ,  H01L27/0617

摘要： In a semiconductor device having a first region formed with the inductor and a second region formed with transistors, the inductor includes a deep well region formed in the silicon substrate beneath the first and second regions, a well region formed on the deep well region in the second region, N type shield regions formed to have the same depth as the well region, and P type shield regions arranged to alternate with the N type shield regions, the transistors formed on the silicon substrate in the second region, an insulating film formed over an entire surface of the silicon substrate such that the insulating film covers the transistors, and a metal line formed on the insulating film in the first region such that the metal line corresponds to the N and P type shield regions.

摘要翻译： 在具有形成有电感器的第一区域和形成有晶体管的第二区域的半导体器件中，电感器包括形成在第一和第二区域下方的硅衬底中的深阱区域，形成在第二区域中的深阱区域上的阱区域 第二区域，形成为具有与阱区相同深度的N型屏蔽区域，以及布置成与N型屏蔽区域交替的P型屏蔽区域，形成在第二区域中的硅衬底上的晶体管，形成在第二区域上的绝缘膜 所述硅基板的整个表面使得所述绝缘膜覆盖所述晶体管，以及形成在所述第一区域中的所述绝缘膜上的金属线，使得所述金属线对应于所述N型和P型屏蔽区。

公开(公告)号：US20160141413A1

公开(公告)日：2016-05-19

申请号：US14813848

申请日：2015-07-30

申请人： Jin-Hyun NOH ,  Su-Tae KIM ,  Jae-Hyun YOO ,  Byeong-Ryeol LEE ,  Jong-Sung JEON

发明人： Jin-Hyun NOH ,  Su-Tae KIM ,  Jae-Hyun YOO ,  Byeong-Ryeol LEE ,  Jong-Sung JEON

IPC分类号： H01L29/78 ,  H01L27/088 ,  H01L29/161

CPC分类号： H01L29/063 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/408 ,  H01L29/4238 ,  H01L29/66545 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

摘要： Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.

摘要翻译： 半导体器件包括在衬底上的沟道层，沟道层包括具有不同于衬底的晶格常数的晶格常数的材料，沟道层上的第一栅电极，第一导电类型的第一源极区 在所述第一源极区域的第一导电类型的第一主体区域和与所述第一源极区域接触的第一导电类型的第一主体区域，设置在所述第一栅极电极的第二侧的所述第一导电类型的第一漏极区域， 在第一漏区下面的第一导电类型的漂移区，并与第一漏极区以及沟道层和第一漂移区中的第一柱状区域接触。 第一螺柱区域的杂质浓度高于第一漂移区域的杂质浓度。

公开(公告)号：US20100052095A1

公开(公告)日：2010-03-04

申请号：US12199443

申请日：2008-08-27

申请人： Su-Tae Kim

发明人： Su-Tae Kim

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L28/10 ,  H01L23/5223 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inductor for semiconductor devices and a method of fabricating the same are disclosed. Through an improved electrical connection between a metal wiring and an inductor line, an improved Q-index and minimized energy loss in a substrate can be accomplished, and a parasitic capacitance can be minimized. For this, the inductor which may include a substrate and an insulating layer formed over the substrate and containing a metal wiring therein. A metal pad may be formed over the insulating layer. An inductor line may be formed over the insulating layer and connected to the metal pad. A pad contact, a metal layer and a via contact may be sequentially stacked within the insulating layer between the metal wiring and the metal pad.

摘要翻译： 公开了一种用于半导体器件的电感器及其制造方法。 通过金属布线和电感线路之间的改进的电连接，可以实现改进的Q指数和最小化的基板中的能量损失，并且可以使寄生电容最小化。 为此，可以包括衬底和形成在衬底上并在其中包含金属布线的绝缘层的电感器。 可以在绝缘层上方形成金属焊盘。 电感线可以形成在绝缘层上并连接到金属焊盘。 可以在金属布线和金属垫之间的绝缘层内依次堆叠焊盘触点，金属层和通孔触点。

公开(公告)号：US20090152649A1

公开(公告)日：2009-06-18

申请号：US12247251

申请日：2008-10-08

申请人： Su Tae Kim

发明人： Su Tae Kim

IPC分类号： H01L47/00

CPC分类号： H01L29/78 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/41758

摘要： Provided is a semiconductor device of a multi-finger type. The semiconductor device comprises an active region, a guard ring, a source electrode, at least one gate electrode, and at least one drain electrode. The active region includes a source region, a drain region, and a channel region. The guard ring surrounds the active region. The source electrode is connected to the guard ring and a bulk region. The source electrode includes electrode bodies disposed on a first side of the active region and a second side of the active region opposite the first side, and fingers connecting the two electrode bodies to branch through the source region. The gate electrode can be provided in plurality as fingers on the channel region. One or more gate electrode fingers can be connected to each other through a set of vias. The drain electrode can be provided in plurality as fingers branching on the drain region.

摘要翻译： 提供了多指型的半导体器件。 半导体器件包括有源区，保护环，源极，至少一个栅电极和至少一个漏电极。 有源区包括源极区，漏极区和沟道区。 护环环绕活动区域。 源电极连接到保护环和大块区域。 源电极包括设置在有源区的第一侧上的电极体和与第一侧相对的有源区的第二侧，并且指状物连接两个电极体以分支穿过源极区。 栅极电极可以多个设置为沟道区域上的指状物。 一个或多个栅极电极指可以通过一组通孔彼此连接。 漏极电极可以多个设置成在漏极区域上分支的手指。

公开(公告)号：US09472659B2

公开(公告)日：2016-10-18

申请号：US14813848

申请日：2015-07-30

申请人： Jin-Hyun Noh ,  Su-Tae Kim ,  Jae-Hyun Yoo ,  Byeong-Ryeol Lee ,  Jong-Sung Jeon

发明人： Jin-Hyun Noh ,  Su-Tae Kim ,  Jae-Hyun Yoo ,  Byeong-Ryeol Lee ,  Jong-Sung Jeon

IPC分类号： H01L29/78 ,  H01L29/161 ,  H01L27/088 ,  H01L21/00

CPC分类号： H01L29/063 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/408 ,  H01L29/4238 ,  H01L29/66545 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

摘要： Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.

摘要翻译： 半导体器件包括在衬底上的沟道层，沟道层包括具有不同于衬底的晶格常数的晶格常数的材料，沟道层上的第一栅电极，第一导电类型的第一源极区 在所述第一源极区域的第一导电类型的第一主体区域和与所述第一源极区域接触的第一导电类型的第一体区域，设置在所述第一栅极电极的第二侧的所述第一导电类型的第一漏极区域， 在第一漏区下面的第一导电类型的漂移区，并与第一漏极区以及沟道层和第一漂移区中的第一柱状区域接触。 第一螺柱区域的杂质浓度高于第一漂移区域的杂质浓度。