System and method for producing electro-optic components integrable with
silicon-on-sapphire circuits
    1.
    发明授权
    System and method for producing electro-optic components integrable with silicon-on-sapphire circuits 失效
    用于生产可与蓝宝石蓝宝石电路集成的电光元件的系统和方法

    公开(公告)号:US5242707A

    公开(公告)日:1993-09-07

    申请号:US632033

    申请日:1990-12-21

    摘要: A system and method are disclosed for producing electro-optic components with transparent, ferroelectric PLZT (perovskite) film characteristics, without lead diffusion. In particular, the fabrication of PLZT-on-sapphire electro-optic components for devices such as spatial light modulators, integrated infrared detectors, and optoelectronic integrated circuits is disclosed, permitting integration of such devices with semiconductor devices having the same substrate, such as silicon-on-sapphire circuits. The system comprises a PLZT film deposition apparatus, a silicon dioxide deposition apparatus, an annealing apparatus, and an optional plasma etching apparatus. During film deposition, material from a PLZT target (source) of suitable (9/65/35) composition is deposited on the substrate and is epitaxially grown on the R-plane (1102) of the substrate, forming a non-ferroelectric, pyrochloric film. The substrate and film are then placed in a silicon dioxide (SiO.sub.2) deposition chamber where SiO.sub.2 is deposited as an insulating layer covering (capping) the film. The substrate, with film and SiO.sub.2 layer, is then placed in an annealing apparatus, at a selected temperature above 550.degree. C. for a selected period of time, to transform the non-ferroelectric, pyrochloric film into a ferroelectric, perovskite film of (9/65/35) composition. The SiO.sub.2 layer may then be removed by conventional etching.

    摘要翻译: 公开了一种用于生产具有透明的铁电PLZT(钙钛矿)膜特性的电光元件而不引线扩散的系统和方法。 特别地,公开了用于诸如空间光调制器,集成红外检测器和光电集成电路的器件的PLZT-蓝宝石电光元件的制造,允许这样的器件与具有相同衬底的半导体器件(诸如硅 - 蓝宝石电路。 该系统包括PLZT膜沉积设备,二氧化硅沉积设备,退火设备和可选的等离子体蚀刻设备。 在膜沉积期间,将来自适合(9/65/35)组成的PLZT靶(源)的材料沉积在衬底上并在衬底的R平面(1102)上外延生长,形成非铁电,高氯酸 电影。 然后将衬底和膜放置在二氧化硅(SiO 2)沉积室中,其中SiO 2沉积为覆盖(封盖)膜的绝缘层。 然后将具有膜和SiO 2层的衬底在选定的温度高于550℃的退火设备中放置一段选定的时间,以将非铁电的高氯酸盐膜转变成铁电体的钙钛矿膜( 9/65/35)组成。 然后可以通过常规蚀刻去除SiO 2层。

    Continuously fed single bubbler for epitaxial deposition of silicon
    2.
    发明授权
    Continuously fed single bubbler for epitaxial deposition of silicon 失效
    连续供给单个起泡器,用于硅的外延沉积

    公开(公告)号:US6123765A

    公开(公告)日:2000-09-26

    申请号:US49537

    申请日:1998-03-27

    CPC分类号: C30B25/14 Y10T117/1008

    摘要: A delivery system and method for providing a gaseous chemical is provided. The system comprises a single bubbler 12 having a chamber 13 for containing a liquid chemical, at least one inlet tube 14 for providing a carrier gas to said chamber, and one outlet tube 16 for providing the gaseous chemical. A liquid chemical supply line 25 conveys the liquid chemical to said chamber. A bubbler is in contact with weight measuring device 24 for weighing the bubbler and generating an output signal responsive to the measured weight. A liquid chemical controller 20 is operatively coupled to said bubbler and said supply line for filling and continuously maintaining a preselected level of the liquid chemical in said chamber responsive to said output signal.

    摘要翻译: 提供了一种用于提供气态化学品的输送系统和方法。 该系统包括具有用于容纳液体化学品的室13的单个起泡器12,用于向所述室提供载气的至少一个入口管14和用于提供气态化学品的一个出口管16。 液体化学品供应管线25将液体化学品输送到所述室。 起泡器与重量测量装置24接触,用于称重起泡器并响应于测量的重量产生输出信号。 液体化学品控制器20可操作地耦合到所述起泡器和所述供应管线,用于根据所述输出信号填充和连续地保持所述腔室中液体化学品的预选液面。