Fabrication of a heterojunction bipolar transistor with integrated MIM capacitor
    2.
    发明授权
    Fabrication of a heterojunction bipolar transistor with integrated MIM capacitor 失效
    具有集成MIM电容器的异质结双极晶体管的制造

    公开(公告)号:US06833606B2

    公开(公告)日:2004-12-21

    申请号:US10289684

    申请日:2002-11-07

    IPC分类号: H01L2706

    CPC分类号: H01L27/0605 H01L21/8252

    摘要: In the present invention, a semiconductor device is formed which includes an MIM capacitor located on the upper surface of a heterostructure from which the emitter, base and collector sections of a nearby HBT are defined. In this way the capacitor and HBT share a substantially common structure, with the base and emitter electrodes of the HBT fashioned from the same metal layers as the upper and lower capacitor plates, respectively. Furthermore, as the insulator region of the capacitor is formed prior to definition of the HBT structure, the dielectric material used can be deposited by means of a plasma enhanced process, without damaging the HBT structure.

    摘要翻译: 在本发明中,形成半导体器件,其包括位于异质结构的上表面上的MIM电容器,从其定义附近HBT的发射极,基极和集电极部分。 以这种方式,电容器和HBT分别具有基本上共同的结构,HBT的基极和发射极电极分别由与上部和下部电容器板相同的金属层制成。 此外,由于在定义HBT结构之前形成电容器的绝缘体区域,所以使用的电介质材料可以通过等离子体增强工艺沉积,而不会损坏HBT结构。