摘要:
In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed.
摘要:
A metal interconnection method of a semiconductor device includes forming a copper layer on a semiconductor substrate and planarizing the copper layer. Two thermal treatments are performed at different temperatures between formation of the copper layer and planarization of the copper layer.